Surface analytical characterization of oxide-free Si(100) wafer surfaces

Summary Wet-chemical cleaning procedures of Si(100) wafers are surface analytically characterized and compared. Hydrophobic surfaces show considerably less native oxides in comparison to hydrophilic surfaces.The growth of the oxide is determined as a function of exposure to air by means of XPS measurements. The chemically shifted Si2p XPS signal is utilized for the quantification of the growth kinetics.One hour after cleaning no chemically shifted Si2p XPS peak is discernible on the hydrophobic surfaces. Assuming homogeneous oxide growth, the detection limit of native oxides is estimated to be below 0.05 nm using an emission angle of 18° with respect to the wafer surface. The calculation of the oxide thickness from the chemically shifted and nonchemically shifted Si2p XPS peak intensities is carried out according to Finster and Schulze [1]. For more than a day after cleaning no surface oxides can be identified on the hydrophobic surfaces. The oxide growth kinetics is logarithmic. The very slow oxidation rate cannot be attributed to fluorine residues since no fluorine is seen by XPS. We explain the slow oxidation rate by a homogeneous hydrogen saturated Si(100) wafer surface.

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Oberflächenanalytische Charakterisierung oxidfreier Si(100)-Waferoberflächen

     

Asymptotic stability of the numerical solution for an integrodifferential reaction-diffusion system

This paper presents the study of the numerical solution of a reaction-diffusion system involving a reaction term of integral type arising from biological models. By means of a monotone approach we introduce upper and lower solutions and then we show the existence and the asymptotic behavior of nonnegative numerical solutions. To this end, we require the positivity of the numerical scheme and so we can use some properties of positive and M-matrices. Finally we give some sufficient conditions to verify the asymptotic stability of the numerical solution.     

Spatial regularities in the effect of locking of photon echo signals and associative optical memory

The efficiency of suppression of the generation of a photon echo response depending on the mutual spatial orientation of gradients of external nonumform electric fields acting on a resonant medium is studied. The possibility of creating an associative memory where the mutual orientation of the gradients of external electric fields is an associative key is discussed.     

Reaction of furan compounds with hydrogen peroxide in the presence of vanadium catalysts

The reactions of furan and a number of its derivatives (furfural, furan-2-carboxylic acid, 2-furfuryl alcohol, and others), in systems containing H₂O₂ and vanadium compounds, proceed through a mechanism of radical hydoxylation of the furan ring with the formation of 5-hydroxy-2(5H)-furanone and maleic acid. The total yield and ratio of the synthesized compounds depend on the reaction conditions.Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 11, pp. 1462–1467, November, 1991.