Modules of piecewise polynomials and their freeness

Partially supported by NSF Grant DMS-9004123 and ARO through MSI Cornell (DAAG 29-85-C-0018)     

An optical bridge reflectometer for sensitive measurement of ion implantation dose

An instrument is described that can be used to monitor, with unprecedented sensitivity, changes in the optical reflectivity due to crystailine damage incurred during ion implantation. It is shown that at the shot-noise limit, changes in the optical reflectivity of silicon as small as 5·10^–7 can be measured in a 10 Hz bandwidth with a signal-to-noise ratio of 100, corresponding to an extrapolated uniform implantation dose of 5·10⁸ cm^–2 for ¹¹B⁺ at 50 keV in silicon.     

Quantum wire heterostructure for optoelectronic applications

Quantum wire (QWR) heterostructures suitable for optoelectronic applications should meet a number of requirements, including defect free interfaces, large subband separation, long carrier lifetime, efficient carrier capture. The structural and opticl properties of GaAs/AlGaAs and InGaAs/GaAs quantum wire (QWR) heterostructures grown by organometallic chemical vapor deposition on nonplanr substrates, which satisfy many of these criteria, are described. These crescent-shaped QWRs are formed in situ during epitaxial growth resulting in virtually defect free interfaces. Effective wire widths as small as 10nm have been achieved, corresponding to electron subband separations greater than K_BT at room temperature. The enhanced density of states at the QWR subbands manifests itself in higher optical absorption and emission as visualized in photoluminescence (PL), PL excitation, amplified spontaneous emission and lasing spectra of these structures. Effective carrier capture into the wires via connected quantum well regions, which is important for enhancing the otherwise extremely small capture cross section of these wires, has also been observed. Room temperature operation of GaAs/AlGaAs and strained InGaAs/GaAs QWR lasers with threshold currents as low as 0.6mA has been demonstrated.     

Characterization and Thermal Behaviour of Garnets from Almandine–Pyrope Series at 1200°C

Hyperfine Interactions - The natural garnets from almandine (Fe3Al2Si3O12)–pyrope (Mg3Al2Si3O12) series with the iron to magnesium atomic ratio ranging from 0.2 to 1 were characterised and...     

Photoreflectance investigations of AlGaN/GaN heterostructures with a two dimensional electron gas

Undoped AlGaN/GaN heterostructures with different content and thickness of AlGaN layer are investigated by photoreflectance (PR) spectroscopy. We have observed PR resonances related to an absorption in both GaN and AlGaN layers. The character of these resonances has been analyzed, and PR lines associated with excitonic and band-to-band absorption in the GaN layer and band-to-band absorption in the AlGaN layer have been identified. The transition related to band-to-band absorption possesses characteristic Franz–Keldysh oscillations (FKOs) associated with a built-in electric field. The electric field in the AlGaN layer obtained on the basis of the analysis of FKOs has been found to be in the range of 244–341 kV/cm. The value of the field has been found to decrease with the increase in AlGaN thickness and to increase with the increase in Al concentration. The surface potential for AlGaN layers has been found to increase with the increase in Al mole fraction and has been estimated to be in the range of 1.0–1.7 eV.     

What is a design? How should we classify them?

Design theory crosses the boundary between mathematics and statistics, and includes a wide range of disparate types of design. In this paper we present a classification scheme which aims to include as many important types as possible, based on a balance among concept, representation and use.     

Temperature jump induction of isomerization dynamics of alkali halide clusters

The time resolved dynamics of diffusionless cube → ring isomerization of the Na₄Cl₄ cluster was interrogated by constant energy molecular dynamics simulations, utilizing the first passage time method. The nonreactive isomerization induced by nonselective vibrational excitation is well accounted for in terms of the statistical RRK theory, opening avenues for experimental exploration of time-resolved cluster isomerization dynamics.     

Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride

The relation between the density of etch pits revealed in GaN by etching in a KOH/NaOH eutectic and the density of dislocations determined by transmission electron microscopy (TEM) is studied along with the relation between the density of dislocations and the density of dark spot defects observed in GaN by microcathodoluminescence (MCL) and electron-beam-induced current (EBIC). It is demonstrated that selective etching is a reliable rapid method for the determination of the type and density of dislocations in GaN in the range 10⁶–10⁸ cm^?2, while MCL and EBIC can be used for the rapid nondestructive determination of the density of dislocations in the range 10⁶–10⁸ cm^?2. It is also found that some deep electron and hole traps are related to dislocations.