Scanning Kelvin Microscope: a new method for surface investigations

Based on the well known Kelvin probe for work function measurements a new microstructure analysis system - the Scanning Kelvin Microscope - has been developed. It allows to measure simultaneously with high lateral resolution the distribution of the contact potential difference (CPD) between a conductive sample and a reference probe together with the topographical structure of the sample surface. The measurement is contact free and non-destructive and can be carried out in natural environments. At present the lateral resolution of the measurement approaches 5 microm. The results can be displayed on a computer in three dimensional colour pictures.     

AFM and XRD investigation of crystalline vapor-deposited C60 films

The morphological and structural properties of C₆₀ films deposited on quartz substrates by sublimation at 320–500° C under high vacuum have been investigated using atomic force microscopy (AFM) and reflection X-ray diffraction (RXRD). The thickness of the films varied between 0.2 m and 10 m. AFM showed that the films consist predominantly of cubic crystals of a few micrometer in size with well-developed (111) and (100) faces. The crystallographic investigation revealed a strongly preferred [111] growth direction which is very sensitive to the deposition rate and substrate temperature. The influence of the experimental parameters on the morphology of the crystals and on the preferred orientation of the films is discussed in view of the AFM and RXRD results.     

Laser processing integrated into machine tools — design,applications, economy

In the last few years, lasers have found new applications in production engineering as tools for surface treatment, cutting, welding, drilling and marking. So far, the laser has mainly been used in special laser processing machines (laser-only) directly integrated into a production line or serving as stand-alone stations in the workshop. By combining conventional metal cutting technologies with laser processes in one machine, complete processing of a workpiece with different technologies in one setting can be realized. The main advantages are a reduction of the material flow between the production machines, which leads to a reduction in processing time and logistics, and an enhancement of manufacturing quality due to the processing in one setting. In addition to this approach, new processing technologies such as laser-assisted machining are possible.Applications of laser caving, hardening, welding and drilling of production parts in combination with the cutting process in one setting have been investigated with the aim of adapting these technologies to the characteristics of the machines and the typical parts spectra. Furthermore, various technical solutions for the integration of lasers into milling centres and lathes have been elaborated. In both situations the laser tool is handled like a standard tool and can be exchanged automatically. The main results will be reported, together with a brief discussion of the economic aspects of laser processing integrated into machine tools.This article is based on an invited paper presented at LANE '94, Erlangen, 12–14 October 1994.     

Determination of the atmospheric neutrino spectra with the Fréjus detector

The combined analysis of the final event set of data on neutrino interactions inside the detector, upward going stopping muons and horizontal muons recorded in the Fréjus experiment is presented. The absolute atmospheric neutrino spectra in the energy range for electron neutrinos and for muon neutrinos are determined. Based on the parameterization of Volkova for thev ^µ a spectral index of =2.66±0.05 is obtained from the ratio of horizontal muons over upward going stopping muons and from the measurement of the energy loss of horizontal muons inside the detector. The neutrino spectra are compared with various flux calculations. They do not show any evidence for neutrino oscillations in agreement with earlier analyses of the Fréjus data.Now atUniversity of Michigan, Ann Arbor, USA     

Domain wall theory of elementary excitations in anisotropic antiferromagneticS=1 chains

We present a theoretical investigation of elementary excitations in anisotropic antiferromagneticS=1 chains using the concept of domain walls in string (hidden) order. Domain walls are classified by the internal spin projectionS _dw ^z . We calculate energies and string correlation functions of low lying excited states of the domain wall type in the Haldane phase and compare the results to those of numerical computations. The boundaries of the Haldane phase are determined from the instability of these excitations with respect to the ground state. The interaction between two domain walls is found to be proportional to the productS _dw ^z , S _dw ^z ₂, it is effectively repulsive for equal spin projections.     

Observation of isomeric states in197Bi

The high spin states of¹¹⁹Te, populated in¹¹⁰Pd(¹³C,4n) and¹¹⁰Pd(¹²C,3n) reactions, have been studied through -ray spectroscopy. The level scheme has been established upto a spin of 55/2. Three-quasiparticle states, based on g² _7/2h_11/2 and g_7/2d_5/2h_11/2 configurations, have been identified. The 35/2 and 39/2 states are suggested to be the fully aligned states constituted by five valence h_11/2 ³, g_7/2, d_5/2 quasiparticles.     

On the interpretation of positron-annihilation data in powders and fine-grained materials

Monte-Carlo simulations of positron diffusion are carried out for powders consisting of spherical and ellipsoidal particles with and without defects. Following Bergersen et al. [1], elastic positron-phonon interaction is considered to be dominant for scattering processes in positron diffusion. The central question is which fraction of the positrons would be able to reach the particle boundaries. Hence, we calculate the Fraction of Positrons reaching particle Surface (FPS). The presence of defects in the particles can drastically reduce FPS depending on the defect concentration and capture rate. We demonstrate that for small-grained materials the grain surface can influence the lifetime signal significantly.Paper presented at the 132nd WE-Heraeus-Seminar on Positron Studies of Semiconductor Defects, Halle, Germany, 29 August to 2 September 1994     

Luminescence centers in porous silicon

Photoluminescence studies on porous silicon show that there are luminescence centers present in the surface states. By taking photoluminescence spectra of porous silicon with respect to temperature, a distinct peak can be observed in the temperature range 100–150 K. Both linear and nonlinear relationships were observed between excitation laser power and the photoluminescence intensity within this temperature range. In addition, there was a tendency for the photoluminescence peak to red shift at low temperature as well as at low excitation power. This is interpreted as indicating that the lower energy transition becomes dominant at low temperature and excitation power. The presence of these luminescence centers can be explained in terms of porous silicon as a mixture of silicon clusters and wires in which quantum confinement along with surface passivation would cause a mixing of andX band structure between the surface states and the bulk. This mixing would allow the formation of luminescence centers.