Effects of nanostructure on optoelectronic properties of β phase polyoctylfluorene thin film

β phase polyoctylfluorene thin films were obtained by exposure to toluene vapor for various annealing times or dipping into a THF/methanol mixture. The photoluminescence and electroluminescence of PFO thin films decrease with increasing annealing time. Grazing incident X-ray diffraction of the thin films indicates that more and larger β phase crystallites will be generated in thin film exposed for longer time, which will lead to more defects that reduce photoluminescence and electroluminescence. By analyzing the mechanism of formation of β phase, we assume that the defects mainly come from the formation of out-of-plane crystalline structure. The assumption is confirmed by higher photoluminescence of β phase polyoctylfluorene thin film achieved by dipping into a THF/methanol mixture that has less out-of-plane crystalline structure.     

罗布泊遥感影像"耳纹"特征分析及其环境意义

研究典型干旱区的罗布泊,对揭示区域环境演变特征和全球变化具有重要意义.从遥感影像上的"耳纹"特征入手,通过光谱、土壤和地表参数等分析,认为:地表全盐含量和结构差异是形成罗布泊遥感影像"耳纹"特征的直接原因;光谱、全盐含量和土壤粒径的分析结果具有很好的一致性."耳纹"记录下了罗布泊地区的环境演变特征,这些特征表明:受全球环境影响,湖水在气候不断干旱的过程中逐渐干涸,干涸过程的气候调整,使罗布泊地区经历了两次相对湿润的气候环境,前一次较长,后一次很短.     

A DFT study on the interaction between europium,uranium and SWCNT

We investigate the electronic and band structure for the (8; 0) single-wall carbon nanotube (SWCNT) with a europium (Eu) and a uranium (U) atom outside by using the first-principles method with the density functional theory (DFT). The calculated band structure (BS), total density of state (TDOS), and projected density of state (PDOS) can elucidate the differences between the pure (8; 0) SWCNT and the nuclei outside the SWCNT. The indirect band gaps are obtained when Eu and U atom are put outside the (8; 0) CNT; they are 0.037 eV and 0.036 eV, respectively, which is much smaller than 0.851 eV for pure CNT. Compared with pure (8; 0) SWCNT, the bottom of the conduction band moves down by 0.383 eV and 0.451 eV with the Eu and U outside, and the top of valence band moves up by 0.127 eV and 0.162 eV, respectively. More significantly, the top of the valence band has exceeded the fermi-level. So, a single nucleus changes the semiconductor character of pure nanotube to semi-metal.     

Propagation of optical vortex solitons due to the Gouy phase in strongly nonlocal nonlinear media

In this paper,we present a study on the propagation of the symmetrical optical vortices formed by two collinear Laguerre-Gauss solitons in strongly nonlocal nonlinear media.The optical vortices,which move along the beam axis as the light propagates,result in a rotation of the beam’s transverse profile.This physical reason of the rotation is the Gouy phase acquired by the component beams.     

Morphological and ultrastructural characterization of the alimentary canal in Japanese wax scale (Ceroplastes japonicus Green)

The morphology and ultrastructure of the alimentary canal in the adult female of the Japanese wax scale, Ceroplastes japonicus Green (Hemiptera: Coccoidea: Coccidae), was investigated using light microscopy, scanning electron microscopy and transmission electron microscopy. The results showed that the foregut was subdivided into a sclerotized pharynx and an oesophagus. A pair of salivary glands attached in the middle of the foregut. The loop-shaped midgut was narrow and longer than the foregut and its inner wall lined with a thick layer of epithelia. The hindgut was divided into a narrower ileum and a broader rectum, with the well-developed filter chamber enclosed in the anterior rectum. Malpighian tubules consisted of two brownish-yellow moniliform tubules with pores, approximately 1 μm in diameter, scattered on the outer surface and many spherical crystals inside the tubules.     

Photoresponse of the In0.3Ga0.7N metal-insulator-semiconductor photodetectors

In0.3Ga0.7N metal-insulator-semiconductor （MIS） and metal-semiconductor （MS） surface barrier photodetectors have been fabricated. The In0.3Ga0.7N epilayers were grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The photoresponse and reverse current-voltage characteristics of the In0.3Ga0.7N MIS and MS photodetectors were measured. A best zero bias responsivity of 0.18 A/W at 450 nm is obtained for the In0.3Ga0.7N MIS photodetector with 10 nm Si3N4 insulator layer, which is more than ten times higher than the In0.3Ga0.7N MS photodetector. The reason is attributed to the decrease of the interface states and increase of surface barrier height by the inserted insulator. The influence of the thickness of the Si3N4 insulator layer on the photoresponsivity of the MIS photodetector is also discussed.     

流体压强与流速关系的教学设计

结合学生的生活实际和年龄特点,创造性地设计了一个讲授飞机升力的实验方法;并以"流体压强与流速关系的教学设计"为案例,展示了教学设计要注重给学生提供充分的实践体验和合作交流机会,既要关注知识的传授和技能的培养,又要关注学生学习兴趣的培养和创新能力的提高;要注重引导学生学会观察问题、提出问题和解决问题,并从中感受到大自然的美妙和合作交流的快乐.     

界面动力学对过冷熔体中球晶生长界面形态的影响

考虑了在非平衡凝固条件下球晶生长过程中界面动力学系数随界面温度的变化,利用渐近分析方法求出了在过冷熔体中球晶生长温度场和界面的近似解析解,研究了非线性界面动力学过冷对于过冷熔体中球晶界面形态和生长速度的影响.研究表明,界面动力学系数越大,球晶的生长速度越快; 反之,表明界面动力学系数越小,球晶的生长速度越慢.与忽略界面动力学的情形比较,在球晶生长过程中依赖于界面温度变化的界面动力学显著地减缓了晶体生长的速度. 关键词： 球晶 界面形态 渐近分析     

High efficiency top-emitting white organic light-emitting devices with a (metal/organic)2 cathode

White top-emitting organic light-emitting devices (TEOLEDs) were fabricated on a glass substrate with metal/organic multilayer of (Ag/Alq₃)₂ (Alq₃ is tris-(8-hydroxyquinoline) aluminum) as cathode. White TEOLEDs with high efficiency were obtained due to the microcavity effects. And the (Ag/Alq₃)₂ cathode, which adjusted the optical characteristics of the devices, played an important role. In addition, Alq₃–Ag–Alq₃ multilayer could work as a buffer layer, which would simplify the process of encapsulation for devices. We also calculated the electroluminescence spectrum of devices encapsulated with Al₂O₃ (150 nm) and Al₂O₃(75 nm)/ZrO₂(75 nm). And the results indicated that the CIE coordinates is almost the same between with and without encapsulating.     

Z箍缩驱动器与丝阵负载耦合特性研究

以丝阵内爆零维模型为基础,采用Pspice模拟行为建模方法,建立了丝阵内爆动态电感与Z箍缩驱动器耦合的全电路模型,实现驱动器放电过程与丝阵内爆过程的自洽求解,并研究了丝阵参数、电路参数对内爆过程的影响.结果表明:丝阵负载与驱动器存在强耦合关系,丝阵参数、电路参数对丝阵峰值箍缩电流、内爆时间、内爆动能影响很大;在驱动器参数不变,内爆时间不超过电路固有放电周期1/4的前提下,峰值箍缩电流、内爆时间、内爆动能随丝阵质量的增加而增大,内爆时间随丝阵初始半径的增加而增大;在丝阵参数不变时,随着驱动器等效电容的增大,内爆时间减小,丝阵内爆动能增大,但驱动器储能转化为内爆动能的效率却先增大后减小.对于特定的驱动器,优化的丝阵参数应使内爆过程充分利用驱动器固有放电周期的上升沿,使丝阵快速收缩的时间起点接近电路固有放电周期的四分之一,以获得最大的动能效率. 关键词： Z箍缩驱动器 零维内爆模型 模拟行为建模 耦合特性