太赫兹波导滤波器的分析与设计

分析了不同宽边情况下对滤波器加工精度的影响,分析结果表明对于不同频段的滤波器,需要选择合适的谐振腔的宽边才能达到较好的性能,同时分析了不同谐振模式的滤波器对加工精度的影响,分析表明,对于太赫兹频段滤波器,选用TE101谐振模式时存在腔体长度会比波导的宽边小很多的情况,而选用高阶谐振模式不但可以提高滤波器的品质因数Q值,减少损耗,同时也能在一定程度上降低滤波器对加工精度的要求。最后以0.34 THz 4阶带通滤波器为例验证此方法的正确性,测试表明该滤波器最低损耗为-0.73 dB,在0.335~0.349 THz范围内损耗在-2 dB以内。     

宽波段连续调谐全固态CW PPMgLN光学参量振荡器

利用半导体激光泵浦输出1064 nm波长的全固态连续Nd:YVO4激光器作为泵浦源,采用周期调谐和温度调谐组合调谐技术,对基于掺氧化镁周期性极化铌酸锂晶体（MgO:LiNbO3, PPMgLN）准相位匹配（QPM）的全固态连续波（CW）光学参量振荡器（OPO）宽波段无分立连续调谐输出特性进行研究。实验采用连续工作模式和外腔结构,基于多周期PPMgLN晶体的30.2,30.4和30.6 m周期,在改变晶体的极化周期的基础上,同时在30～100 ℃范围内调节晶体工作温度。实验结果表明:CW PPMgLN OPO的泵浦阈值仅为0.22 W;不同极化周期需要的温度调谐范围不同;信号光在1 559.8～1 597.2 nm近红外波段和闲频光在3 187.3~3 347.3 nm中红外波段连续调谐输出。实现了外腔式全固态CW OPO在信号光和闲频光波段的无分立连续调谐输出。     

Analysis of the mechanisms of electron recombination in HgCdTe infrared photodiode

This paper presents an experimental study of minority carrier lifetime and recombination mechanisms in HgCdTe photodiode. The excitation light source is a wavelength-tunable pulsed infrared laser. A constant background illumination has been introduced to minimize the effect of the junction equivalent capacitor and resistance. The decay of the photo-generated voltage is recorded by a storage oscilloscope. By fitting the exponentially decay curve, the time constant has been obtained which is regarded as the photo-generated minority carrier lifetime of the HgCdTe photodiode. The experimental results show that the carrier lifetime is in the range of 18–407 ns at 77 K for the measured detectors of four Cd compositions. It was found that the Auger recombination process is more effective for low Cd composition while the radiative recombination process became more important for high composition materials. The Shockley–Read–Hall recombination processes could not be ignored for all Cd composition.     

基于无模型方法的混沌系统自适应控制

传统的混沌控制方法大多需要获知混沌系统的模型知识, 但是工业实际中系统的参数经常是未知的,与此同时系统建模过程当中经常会不可避免地存在未建模的动态不确定性, 这种情况下常规的混沌控制方法不能取得优化的控制性能指标．为解决此问题, 提出了一类基于无模型方法的混沌系统自适应控制算法．该算法基于数据驱动, 无需混沌系统的先验知识, 无需训练过程, 在线调整参数较少, 是一种低成本的控制器．数学证明了该控制系统的稳定性, 仿真结果说明了这种理论的有效性． 关键词： 混沌控制 自适应 无模型 数据驱动     

外加直流电场作用下高阶弱非线性复合介质的电势分布

利用同伦分析方法, 研究了一类由柱形杂质随机嵌入基质所形成的、电场和电流密度满足J = σ E + χ |E|²E + η|E|⁴E 形式本构关系的高阶弱非线性复合介质在外加直流电场作用下的电势分布问题. 首先利用模函数展开法, 将本构方程及边界条件化成了一系列非线性常微分方程的边值问题; 再利用同伦分析方法进行求解, 给出了电势在基质和杂质区域的渐近解析解. 关键词： 高阶弱非线性复合介质 模函数展开法 同伦分析方法 电势分布     

色散平坦渐减光纤中色散特性对超连续谱的影响

从频域全场方程出发研究了色散平坦渐减光纤中超连续谱(SC)的产生。结果表明,色散平坦渐减光纤的初始色散和色散斜率对超连续谱的产生有重要影响,当超连续谱宽度小于某一特定阈值时,谱宽随初始色散或色散斜率显著变化;而当超连续谱谱宽大于此值以后,谱宽随这两个参量的变化较缓慢。并且发现色散递减曲线为凸型的光纤比色散线性递减的光纤更有利于产生宽的超连续谱;而色散递减曲线为凹型的光纤不利于形成宽的超连续谱。计算表明经过优化选择光纤的色散参量,可以得到谱宽达330nm的超连续谱。     

介质膜滤波器色散特性的研究

采用信号处理的方法,对介质膜滤波器的滤波特性进行了详细的研究。介质膜滤波器是最小相位滤波器,它的幅度响应与相位响应之间存在希尔伯特变换规律,因此可以通过它的幅度响应重构它的相位响应,进而可以得到它的色散特性。为了验证理论分析,设计了射频调制法测试介质膜滤波器群速度延时的实验装置。实验测试了一个100GHz33信道的介质膜滤波器的群速度延迟。通过对实验结果与理论计算结果的对比分析,发现实验数据与理论分析吻合得比较好。最后,对介质膜滤波器的色散的特点进行了分析。     

级联长周期光栅光谱特性

利用传输矩阵法分析了级联长周期光栅的光谱特性,讨论了级联处光纤的长度、位置以及包层模损耗系数对级联长周期光栅光谱的影响,并对级联长周期光栅和相移长周期光栅的光谱进行了比较。结果表明两者光谱存级联光纤长度较小或级联位置靠近光栅两端时具有较强的一致性,而在级联处光纤较长并且级联位置在中间时,两者表现出截然不同的光谱特性;在不考虑其他损耗的情况下,如果只改变级联处光纤长度,级联长周期光栅总量守恒;此外,当级联长周期光栅在级联处光纤包层模损耗系数较大时,级联长周期光栅的光谱等效于两个长周期光栅光谱的非相干叠加,从而为长周期光栅增益均衡器的优化设计和制作提供了一个简便有效的方法。     

Two-photon excited intramolecular energy transfer and light-harvesting effect in novel dendritic systems

Two-photon absorption excited intramolecular energy transfer and light-harvesting effects are demonstrated in three novel dendritic systems. These systems contain both an antenna structure that can effectively absorb two-photon energy at approximately 800 nm and emit fluorescence at approximately 515 nm and a core moiety that can absorb one-photon energy at approximately 520 nm and emit at approximately 590 nm. Covalently combining the core and antenna functionalities intrinsically changes the optical behavior of the component pieces. The two-photon energy absorbed by the antenna structure is resonantly transferred to the core, where the core's emission intensity is enhanced by 8, 20, and 34 times for the three dendritic systems.     

Control of gain and thermal carrier loss profiles for mode optimization in 980-nm broad-area vertical-cavity surface-emitting lasers

Optical gain and thermal carrier loss distributions regarding current diffusion and various electric contact areas are investigated to improve the near-field modes from the ring-shape to a Gaussian-like configuration for extra-broad-area and oxide-confined vertical-cavity surface-emitting lasers. In this work an equivalent circuit network model is used. The resistance of the continuously-graded distributed Bragg reflectors （DBRs）, the current diffusion and the temperature effect due to different electric-contact areas are calculated and analyzed at first, as these parameters affect one another and are the key factors in determining the gain and thermal carrier loss. Finally, the gain and thermal carrier loss distributions are calculated and discussed.