Surface status and size influences of nickel nanoparticles on sulfur compound adsorption

Metallic nickel nanoparticles were incorporated on mesoporous silica to remove sulfur compounds in diesel selectively. In the first method, nickel nanoparticles were formed on mesoporous silica SBA-15 by impregnation and subsequent reduction of nickel nitrate. The sulfur adsorption capacity was strongly dependent on the nickel loading and the average nickel particle size. In the second method, nickel nanoparticles were synthesized in solution in the presence of a capping agent and then incorporated in mesoporous silica MCF by sonication. Although these particles maintain their sizes on the MCF surface after heat treatment, capping agent remaining on the Ni particle surface might interfere the adsorption of sulfur compounds.     

Generation of optical vector beams with a diffractive optical element interferometer

We present a novel approach to generating radially and azimuthally polarized vector beams that utilize an interferometer constructed from two identical diffractive optical elements. The measured polarization properties of four vector beam states and their phase relationships are in good agreement with theoretical expectations. This interferometer is passively phase stable and robust, making it suitable for linear and nonlinear optical (superresolution) microscopy.     

Effects of Si-doped GaAs layer on optical properties of InAs quantum dots

We have investigated the optical properties of InAs self-assembled quantum dots (SAQDs) with the Si-doped GaAs barrier layer. Two types of samples are fabricated according to the position of the Si-doped GaAs layer. For type A samples the Si-doped GaAs layer is grown below the QDs, whereas for type B samples the Si-doped GaAs layer is grown above the QDs. For both types of samples the excited-state emissions caused by state filling are observed in photoluminescence (PL) spectra at high excitation power densities. The bandgap renormalization of QDs can be found from the shift of the PL peak energy. Particularly, for type A samples the Si atoms act as nucleation centers during the growth of InAs QDs on the Si-doped GaAs layer and affect the density and the size of the QDs. The Si-doped GaAs layer in type A samples has more effects on the properties of QDs, such as state filling and bandgap renormalization than those of type B samples.     

Bandgap engineering of self-assembled InAs quantum dots with a thin AlAs barrier

We investigate the effects of a thin AlAs layer with different position and thickness on the optical properties of InAs quantum dots (QDs) by using transmission electron microscopy and photoluminescence (PL). The energy level shift of InAs QD samples is observed by introducing the thin AlAs layer without any significant loss of the QD qualities. The emission peak from InAs QDs directly grown on the 4 monolayer (ML) AlAs layer is blueshifted from that of reference sample by 219 meV with a little increase in FWHM from 42–47 meV for ground state. In contrast, InAs QDs grown under the 4 ML AlAs layer have PL peak a little redshifted to lower energy by 17 meV. This result is related to the interdiffusion of Al atom at the InAs QDs caused by the annealing effect during growing of InAs QDs on AlAs layer.