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31.
Uhm H.S. Lee P.H. Kim Y.I. Kim J.H. Chang H.Y. 《IEEE transactions on plasma science. IEEE Nuclear and Plasma Sciences Society》1995,23(4):628-635
A theory is developed for the density profile of low temperature plasmas confined by applied magnetic field and an experiment of the electron-cyclotron-resonance (ECR) plasma is conducted to compare the theoretical prediction and experimental measurements. Due to a large electron mobility along the magnetic field, electrons move quickly out of the system, leaving ions behind and building a space charge potential, which leads to the ambipolar diffusion of ions. In a steady-state condition, the plasma generation by ionization of neutral molecules is in balance with plasma loss due to the diffusion, leading to the electron temperature equation, which is expressed in terms of the plasma size, chamber pressure, and the ionization energy and cross section of neutrals. The power balance condition leads to the plasma density equation, which is also expressed in terms of the electron temperature, the input microwave power and the chamber pressure. It is shown that the plasma density increases, reaches its peak and decreases, as the chamber pressure increases from a small value (0.1 mTorr). These simple expressions of electron temperature and density provide a scaling law of ECR plasma in terms of system parameters. After carrying out an experimental observation, it is concluded that the theoretical predictions of the electron temperature and plasma density agree remarkably well with experimental data 相似文献
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34.
采用Agilent 81910A光子全参量测试仪,首次实验研究了InP/In1-xGaxAs1-yPy-MQW(Multiple-Quantum-Well,MQW)材料与衬底间因应力而产生的M-Z型光调制器的PDL影响以及由此引起的由差分群时延(Differential Group Delay,DGD)表征的偏振模色散(Polarization Mode Dispersion,PMD).研究结果表明,半导体MQW光调制器的PDL与DGD是一致的.因此在半导体光器件的制作过程中,应尽可能地减小衬底与波导芯层之间的因残存应力的存在造成对光器件的高速性能的不利影响. 相似文献
35.
采用密度泛函方法(B3P86)对 Fe_2分子结构进行了优化.计算结果中未观察到自旋污染,基态波函数与高态波函数并未混杂,结果表明,Fe_2中有8个未配对电子,这些电子空间分布不同和自旋平行产生的自旋极化效应,使 Fe_2能量最低.计算结果表明,Fe_2分子的基态是~9∑_g~ ,并非~7Δ_u,进而表明 Fe_2的自旋平行效应比电子自旋配对效应要强.计算得到该分子基态的二阶、三阶和四阶力常数分别为1.4115×10~(-2)aJ/nm~2、-37.1751×10~3aJ/nm~3和 98.7596×10~4aJ/nm~4;光谱数据ω_eχ_e、B_e、α_e分别为0.3522、0.0345、 0.4963×10~(-4)cm~(-1);离解能为3.5522eV,平衡键长为0.2137nm,振动频率为292.914cm~(-1);并得到了 Murrel-Sorbie 函数. 相似文献
36.
Jong Uhn Kim 《Transactions of the American Mathematical Society》2002,354(3):1117-1135
In this paper we discuss an initial-boundary value problem for a stochastic nonlinear equation arising in one-dimensional viscoelasticity. We propose to use a new direct method to obtain a solution. This method is expected to be applicable to a broad class of nonlinear stochastic partial differential equations.
37.
Junxiang Zhang Yabin Dong Haihong Wang Jiangrui Gao 《量子光学学报》2006,12(B08):74-74
The quantum coherence effects of the transition Fe = 2←→Fg = 3 depending on the polarization of the coupling and probe beam are observed in a Cs vapor cell. The splitting of electromagnetically induced transparency (EIT) window is observed when the degeneracy of two-level system is broken using a magnetic field. It is also shown that the splitted transparency points of two of three windows are shifted with the intensity of magnetic field ( i. e. Zeeman splitting in the upper and lower levels ) increasing. On the contrary, when we fix the intensity of magnetic field, and increase the Rabi frequency of the coupling beam, the splitted transparency peaks become wider. A qualitative agreement between experiment and theory is found. 相似文献
38.
Gauss periods give an exponentiation algorithm that is fast for many finite fields but slow for many other fields. The current paper presents a different method for construction of elements that yield a fast exponentiation algorithm for finite fields where the Gauss period method is slow or does not work. The basic idea is to use elements of low multiplicative order and search for primitive elements that are binomial or trinomial of these elements. Computational experiments indicate that such primitive elements exist, and it is shown that they can be exponentiated fast. 相似文献
39.
Neodymium-substituted Bi4Ti3O12 (BNdT) thin films were prepared by a chemical solution deposition technique on platinum- coated silicon substrates. All of
the samples were annealed at the relatively low temperature of 600 °C by a rapid thermal annealing process in different atmospheres,
such as O2, air, and nitrogen, and vacuum. Irrespective of different annealing atmospheres, all of the BNdT thin films exhibit good
ferroelectric properties, such as a saturated hysteresis loop, good fatigue endurance, and low leakage current density. A
large remanent polarization (Pr) of ∼48 μC/cm2 with an electric field of 240 kV/cm was observed from the BNdT thin film annealed in O2 atmosphere. The BNdT thin films annealed in nitrogen and vacuum, at reduced oxygen partial pressures, exhibit smaller Pr than that annealed in oxygen. The difference of Pr of the BNdT thin films annealed in different atmospheres may originate from differences in the grain sizes and the number
of oxygen vacancies.
PACS 77.55.+f; 77.80.-e; 77.80.Fm; 81.15.-z 相似文献
40.
首先在Contingent切锥意义下界定了Banach空间中非空集合的伪切锥和伪凸性的概念,并讨论了相应的性质,然后针对可微优化问题,在广义凸性假设下,建立了最优性条件。 相似文献