监管技术巨头：技术力量作为市场支配地位认定因素之再审视

如何有效规制技术巨头已然成为当前《反垄断法》修订的重要任务。技术力量虽然作为传统的市场支配地位认定要素,但长期以来呈现被虚置化的客观状态,致使技术巨头市场支配地位的认定难度增大,技术力量自身的传导效应被显著低估。数字技术对市场竞争的影响异于以往,其通过平台、数据、算法的数字市场三维结构框架影响生产与交易的全过程。技术与三维结构结合所形成的技术力量极为强大,超越了以控制价格为主的传统市场力量,结合社会与资本力量形成了更牢固的市场固化结构。在判断技术巨头的市场支配地位时,亟需发挥技术力量作为非价格型认定要素的重要作用。应当摒弃虚置技术力量作为市场支配地位认定要素的固有症结,提高技术力量在认定市场支配地位时所占权重,回归结构性视角,妥善防范技术巨头无序扩张。     

Versatile Graphene-Isolated AuAg-Nanocrystal for Multiphase Analysis and Multimodal Cellular Raman Imaging

Main observation and conclusion Surface-enhanced Raman spectroscopy(SERS)-based bioanalytical technique involves the interaction of SERS-active substrate with c...     

Superhydrophobic Flexible Supercapacitors Formed by Integrating Hydrogel with Functional Carbon Nanomaterials

Main observation and conclusion With the rapid development of the wearable electronics,the flexible supercapacitor with high energy density has attracted more a...     

高温吸热管内超临界CO2传热特性的数值模拟

研究超临界CO2在高温吸热管内的传热特性是将其应用于聚光太阳能热发电技术中的基础.本文对此进行了数值模拟研究,分析了流体温度、流动方向、系统压力、质量流率和热流密度对对流传热系数和Nu数的影响.结果表明:高温区(800—1050 K)的对流传热系数和Nu数受流动方向和系统压力的影响均很小,但都随着质量流率的增大以及热流...     

液相放电等离子体特性与激波特性的数值分析

以能量平衡方程为基础,采用不同的电导率唯象模型描述了液相放电等离子体圆柱形通道特性,得到了通道内半径、温度、电阻、电流和耗散能量随时间的变化关系,还给出了距离放电间隙中心一定距离处的冲击波压力变化,并与前人利用等离子体通道球状模型计算得到的结果进行了比较。结果表明：把等离子体通道看成球状和看成圆柱状在描述通道压力和通道半径时差异显著,而在描述其他物理特性时差别不大;三种电导率模型在描述等离子体通道物理特性时,变化趋势大体相同,而在描述激波特性时,电导率模型σ₂更符合实际;通过对比电学参数与压力参数的变化,就可以在实验中根据实验数据以及具体的研究问题进行模型的适用性选择。     

Significant change in water contact angle of electrospray‐synthesized SiO2 films depending on their surface morphology

Amorphous SiO₂ films were deposited by means of an electrospray technique. The relation between the water contact angle (WCA) of the deposited SiO₂ films and the surface morphology is investigated. The feeding rate of the electrospray process greatly affects the morphology of the synthesized SiO₂ films. There is also a significant change in the WCA on the surface of the films: the rougher the surface, the greater the WCA. A model based on the Cassie–Baxter formulation is used to explain the change observed in the WCA on the SiO₂ films. Copyright © 2012 John Wiley & Sons, Ltd.