Analysis of the charge transfer mechanisms responsible for the current-voltage characteristics of Ca<Subscript>4</Subscript>Ga<Subscript>2</Subscript>S<Subscript>7</Subscript>: Eu<Superscript>3+</Superscript> single crystals

The current-voltage characteristics of Ca₄Ga₂S₇: Eu³⁺ single crystals are measured for the first time, and the processes affecting these characteristics are analyzed theoretically. It is demonstrated that Ca₄Ga₂S₇: Eu³⁺ single crystals are high-resistance semiconductors with a resistivity of ～10⁹ Ω cm and a relative permittivity of 10.55. The electrical properties of the studied materials are governed by traps with activation energies of 0.13 and 0.19 eV and a density ranging from 9.5×10¹⁴ to 2.7×10¹⁵ cm^?3. The one-carrier injection is observed in weak electric fields. In electric fields with a strength of more than 4×10³ V/cm, traps undergo thermal field ionization according to the Pool-Frenkel mechanism. At low temperatures and strong fields (160 K and 5×10⁴ V/cm), the electric current is most likely due to hopping conduction by charge carriers over local levels in the band gap in the vicinity of the Fermi level.     

On characterization of Poisson and Jacobi structures

We characterize Poisson and Jacobi structures by means of complete lifts of the corresponding tensors: the lifts have to be related to canonical structures by morphisms of corresponding vector bundles. Similar results hold for generalized Poisson and Jacobi structures (canonical structures) associated with Lie algebroids and Jacobi algebroids.     

A microspectroscopic study of the electronic homogeneity of ordered and disordered Sr2FeMoO6

Disordered Sr₂FeMoO₆ shows a drastic reduction in saturation magnetization compared to highly ordered samples, moreover magnetization as a function of the temperature for different disordered samples shows qualitatively different behaviours. We investigate the origin of such diversity by performing spatially resolved photoemission spectroscopy on various disordered samples. Our results establish that e_xtensive electronic inhomogeneity, arising most probably from an underlying chemical inhomogeneity in disordered samples, is responsible for the observed magnetic inhomogeneity. It is further pointed out that these inhomogeneities are connected with composition fluctuations of the type Sr₂Fe_1+x Mo_1-x O₆ with Fe-rich (x > 0) and Mo-rich (x < 0) regions. Dedicated to Prof J Gopalakrishnan on his 62nd birthday.     

Analysis of finite capacity discrete-time <Emphasis Type="Italic">GI</Emphasis>/<Emphasis Type="Italic">Geo</Emphasis>/1 queueing system with multiple vacations

This paper investigates a discrete-time single-server finite-buffer queueing system with multiple vacations in which arrivals occur according to a discrete-time renewal process. Service and vacation times are mutually independent and geometrically distributed. We obtain steady-state system length distributions at prearrival, arbitrary and outside observer's observation epochs under the late arrival system with delayed access and early arrival system. The analysis of actual waiting-time for both the systems has also been carried out. The model has potential application in high-speed computer network, digital communication systems and other related areas.     

The existence of equilibria in certain games,separation for families of convex functions and a theorem of Borsuk-Ulam type

The existence of a Nash equilibrium in the undiscounted repeated two-person game of incomplete information on one side is established. The proof depends on a new topological result resembling in some respect the Borsuk-Ulam theorem.     

The effects of O deficiency on the electronic structure of rutile TiO2

Ab initio density functional calculations (plane wave GGA, CASTEP) were performed to determine the effect of O deficiency on the electronic structure of rutile, TiO₂. O deficiency was introduced through either the removal of O or the insertion of interstitial Ti atoms. At physically realistic concentrations of O vacancies in the rutile lattice (i.e. 25% and less) O deficiency results in the population of the bottom of the conduction band, the location of the Ti 3d orbitals in the pure structure, increasingly with increasing vacancy concentration. We propose that this could be confused with the formation and population of gap states especially where O vacancies occur in isolated positions in the lattice. In contrast, Ti interstitials introduce a defect state into the energy gap, without an overall reduction in the size of the energy gap. O vacancies result in a spin polarized solution, whereas Ti interstitials do not.     

First Results of Ion Trapping in the Dresden EBIT II

Hyperfine Interactions - It is well known that many reinforced concrete structures are at risk of deterioration due to chloride ion contamination of the concrete or atmospheric carbon dioxide...     

Global stability and periodic solution of the viral dynamics

It is well known that the mathematical models provide very important information for the research of human immunodeficiency virus-type 1 and hepatitis C virus (HCV). However, the infection rate of almost all mathematical models is linear. The linearity shows the simple interaction between the T cells and the viral particles. In this paper, we consider the classical mathematical model with saturation response of the infection rate. By stability analysis we obtain sufficient conditions on the parameters for the global stability of the infected steady state and the infection-free steady state. We also obtain the conditions for the existence of an orbitally asymptotically stable periodic solution. Numerical simulations are presented to illustrate the results.