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131.
The influence of thermally assisted tunneling on the performance of charge trapping memory 下载免费PDF全文
We evaluate the influence of the thermally assisted tunneling (TAT) mechanism on charge trapping memory (CTM) cell performance by numerical simulation, and comprehensively analyse the effects of the temperature, trap depth, distribution of trapped charge, gate voltage and parameters of TAT on erasing/programming speed and retention performance. TAT is an indispensable mechanism in CTM that can increase the detrapping probability of trapped charge. Our results reveal that the TAT effect causes the sensitivity of cell performance to temperature and it could affect the operational speed, especially for the erasing operation. The results show that the retention performance degrades compared with when the TAT mechanism is ignored. 相似文献
132.
Polyaniline-coated multi-walled carbon nanotubes were prepared by in situ chemical polymerization method for the novel sensing materials of ammonia gas. The thickness of the polyaniline coatings was controlled by the oxyfluorination treatment on the multi-walled carbon nanotubes. The oxyfluorination with higher oxygen content produced the more hydrophilic functional groups on the surface of multi-walled carbon nanotubes. Both the resistivity change and the response time were significantly improved with high repeatability using the more hydrophilic multi-walled carbon nanotubes which were modified with oxyfluorination. 相似文献
133.
134.
醇+卤代烃混合体系,尤其是乙醇、三氟乙醇(TFE)等与卤代烃的混合工质在吸收式制冷、热泵、蒸气动力循环等领域中有着重要的应用.CPA方程可以描述缔合流体的性质,用于含醇类组元的混合体系气液相平衡性质描述.本文首先从纯物质饱和性质实验数据回归得到了CPA方程参数;将CPA方程应用于醇+卤代烃混合体系的气液相平衡计算,采用并比较了2种缔合方案;比较了CPA方程与G~E-EoS模型的相平衡计算效果.CPA状态方程在揭示分子间相互作用的基础上可准确描述醇+卤代烃混合体系的气液相平衡性质. 相似文献
135.
136.
We investigate the temperature dependence of radiation-induced attenuation (RIA) at 1 310 nm for a Ge/P co-doped fiber after a steady-state γ-ray irradiation.A γ irradiation facility 60Co source is used to irradiate the fiber at a dose rate of 0.5 Gy/min,satisfying a total dose of 100 Gy.The test temperature ranges from-40 to 60℃ by 20℃,and the RIA of the fiber is obtained using a power measuring device.The experimental result demonstrates that RIA exhibits a steady,monotonic,and remarkable temperature dependence after approximately 48h of accelerated annealing at 70℃.The optical fiber irradiated with a high dose and annealed sufficiently can be used as a temperature sensor. 相似文献
137.
Activated carbon was treated at 5.0 GPa up to 1600 °C and the structural evolution in the graphitization process was investigated. The graphitization temperature is reduced to 1200 °C at 5 GPa, as reflected by x-ray diffraction patterns. Honeycomb-like structures come into being in the high-pressure sintering temperature range of 1000–1100 °C and slice-like structures appear after graphitization. Raman frequency and half width drop drastically near the graphitization temperature, and the appearance of D and D′ lines indicates there are still some disorder structures in the graphitized activated carbon. 相似文献
138.
光腔模式及光束传输的特征向量算法 总被引:1,自引:0,他引:1
发展了一种新颖的适用于光腔模式及光束传输模拟计算的特征向量法.该方法的核心是基于菲涅耳-基尔霍夫衍射积分理论构造了一种新的光腔传输矩阵,通过求解激光谐振腔的本征积分方程,即可一次求解得到表征腔镜上多个光场模式振幅及相位分布的特征向量组;而谐振腔内或腔外任意地方的光场分布,也可采用该方法进行光束传输模拟而求得.对与该方法有关的单元划分、形函数选取、误差及稳定性分析等问题进行了论述,分析表明:合适的单元划分和形函数选取有利于提高计算速度、精度和稳定性. 相似文献
139.
Six-gap resistive plate chamber (MRPC) prototypes with semiconductive glass electrodes (bulk resistivity~1010.cm) were studied for suitability in time-of-flight (TOF) applications at high rates. These studies were performed using a continuous electron beam of 800 MeV at IHEP and an X-ray machine. Time resolutions of about 100 ps and efficiencies larger than 90% were obtained for flux densities up to 28 kHz/cm2. 相似文献
140.
D. Do S. S. Kim S. W. Yi J. W. Kim 《Applied Physics A: Materials Science & Processing》2009,94(3):697-701
Ferroelectric and dielectric properties of bilayered ferroelectric thin films, SrBi4Ti4O15 grown on Bi4Ti3O12, were investigated. The thin films were annealed at 700°C under oxygen atmosphere. The bilayered thin films were prepared
on a Pt(111)/Ti/SiO2/Si substrate by a chemical solution deposition method. The dielectric constant and dielectric loss of the bilayered thin
films were 645 and 0.09, respectively, at 100 kHz. The value of remnant polarization (2P
r) measured from the ferroelectric thin film capacitors was 60.5 μC/cm2 at electric field of 200 kV/cm. The remnant polarization was reduced by 22% of the initial value after 1010 switching cycles. The results showed that the ferroelectric and dielectric properties of the SrBi4Ti4O15 on Bi4Ti3O12 ferroelectric thin films were better than those of the SrBi4Ti4O15 grown on a Pt-coated Si substrate suggesting that the improved properties may be due to the different nucleation and growth
kinetics of SrBi4Ti4O15 on the c-axis-oriented Bi4Ti3O12 layer or on the Pt-coated Si substrate. 相似文献