2,9-disubstituted 1,10-phenanthroline nickel complexes: Syntheses,characterization, and their ethylene oligomerization

Nickel complexes 1–4 ligated with 2,9-disubstituted-1,10-phenanthroline were synthesized and characterized by FT-IR spectra and elemental analysis. The molecular structure of complex 2 was confirmed by X-ray crystal diffraction analysis. Activated with methylaluminoxane (MAO), those complexes showed moderate activities for ethylene oligomerization. Published in Kinetika i Kataliz, 2007, Vol. 48, No. 5, pp. 710–714. This article was submitted by the authors in English.     

Buckling of a stiff thin film on a compliant substrate in large deformation

A finite-deformation theory is developed to study the mechanics of thin buckled films on compliant substrates. Perturbation analysis is performed for this highly nonlinear system to obtain the analytical solution. The results agree well with experiments and finite element analysis in wavelength and amplitude. In particular, it is found that the wavelength depends on the strain. Based on the accurate wavelength and amplitude, the membrane and peak strains in thin films, and stretchability and compressibility of the system are also obtained analytically.     

Multi-layer thin films/substrate system subjected to non-uniform misfit strains

Current methodologies used for the inference of thin film stress through curvature measurement are strictly restricted to stress and curvature states that are assumed to remain uniform over the entire film/substrate system. These methodologies have recently been extended to a single layer of thin film deposited on a substrate subjected to the non-uniform misfit strain in the thin film. Such methodologies are further extended to multi-layer thin films deposited on a substrate in the present study. Each thin film may have its own non-uniform misfit strain. We derive relations between the stresses in each thin film and the change of system curvatures due to the deposition of each thin film. The interface shear stresses between the adjacent films and between the thin film and the substrate are also obtained from the system curvatures. This provides the basis for the experimental determination of thin film stresses in multi-layer thin films on a substrate.     

A generalized quasi-sum relations for oscillator strengths in transition arrays: theoretical study of the opacity of Ge plasmas

We present a simplified relativistic configuration interaction method (SRCI), by which all the energy levels and oscillator strengths in each transition array can be calculated. There exist generalized quasi-sum relations for the calculated oscillator strengths in the relevant transition arrays by the SRCI and by an unresolved transition array model (UTA). Based on UTA and the detailed configuration accounting (DCA), with a fully relativistic treatment incorporated with the quantum defect theory, the X-ray absorption spectra for any middle- and high-Z plasmas or composite plasmas can be calculated with much less computational efforts. The gross features of calculated spectra by DCA-UTA are in agreement with the relevant experimental measurements, except some detailed structures in some narrow spectral ranges. Such detailed structures can be calculated by SRCI incorporated with DCA-UTA. As an illustrative example, the absorption spectra of Ge plasmas are calculated by DCA-UTA-SRCI and are in agreement with the experimental opacity data. Therefore, the theoretical method (DCA-UTA-SRCI) verified by experimental measurements will not only be a basic tool to provide “precision” opacity data for the inertial confinement fusion research (ICF) and studies in stellar physics but also can be used to analyze the relevant diagnostic measurements for ICF plasmas.     

用PM3量化参数预测多氯代二苯并呋喃的logKow

从现有的PCDFs分子的正辛醇 /水分配系数 (logKow)实验数据出发 ,建立定量结构 性质关系方程(QSPR) .采用G98W程序包中的PM3方法对 13 5个多氯代二苯并呋喃 (PCDFs)分子和二苯并呋喃进行了优化计算 ,作业命令为 #pPM3optfreqscf(conver =9) ,以计算所得的分子轨道能量、碳原子电荷作为PCDFs分子结构描述符 ,运用多元线性回归技术建立了PCDFs的logKow与分子结构描述符的四元方程 ,最优相关系数为 0 .95 0 7,标准偏差为 0 .173 7,经检验该模型的稳健性好 ,并对未有实验数据的 85个PCDFs的logKow进行预测     

Yellow‐light‐emitting cyano‐substituted poly[(1,3‐phenylene vinylene)‐alt‐(1,4‐phenylene vinylene)] derivative: Its synthesis and optical properties

A soluble cyano‐substituted poly[(1,3‐phenylene vinylene)‐alt‐(1,4‐phenylene vinylene)] derivative ( 9 ) was synthesized and characterized. Comparison between 9 and its model compound ( 10 ) showed that the chromophore in 9 remained to be well defined as a result of a π‐conjugation interruption at adjacent m‐phenylene units. The attachment of a cyano substituent only at the β position of the vinylene allowed the maximum electronic impact of the cyano group on the optical properties of the poly(p‐phenylene vinylene) material. At a low temperature (?108 or ?198 °C), the vibronic structures of 9 and 10 were partially resolved. The absorption and emission spectra of a film of 9 were less temperature‐dependent than those of a film of 10 , indicating that the former had a lower tendency to aggregate. A light‐emitting diode (LED) based on 9 emitted yellow light (λ_max ≈ 578 nm) with an external quantum efficiency of 0.03%. © 2003 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 41: 3149–3158, 2003     

电致发光色纯性增强的硅基有机微腔

报道了硅基有机微腔的电致发光（EL）.该微腔由上半透明金属膜、中心有源多层膜和多孔硅分布Bragg反射镜（PS DBR）组成.半透明金属膜由Ag（２０nm）构成，充当发光器件的负电极和微腔的上反射镜.有源多层膜由Al (1 nm) / LiF(05 nm) /Alq3/Alq3:DCJTB/NPB/CuPc/ITO/SiO2组成，其中的Al/LiF为电子注入层，ITO为正电极，SiO2为使正、负电极电隔离的介质层.该PS DBR是采用设备简单、成本低廉且非常省时的电化学腐蚀法用单晶Si来制备的；该PS 关键词： 电化学腐蚀 电致发光 窄峰发射 硅基有机微腔     

Small and high-density GeSiC dots stacked on buried Ge hut-clusters in Si

Self-assembled GeSiC dots stacked on a Ge hut-cluster layer buried in Si have been investigated. The critical thickness for formation of GeSiC dots is reduced owing to the strain fields from the buried hut-clusters. By utilizing the stacked structure, the dot size is decreased and the uniformity is improved. The highest density of the GeSiC dots with stacked structures is 7.4×10¹⁰ cm⁻², which is six times larger than that of single GeSiC dots. The formation of the self-assembled GeSiC dots is strongly influenced by being stacked with buried Ge dots as well as C incorporation.     

CNx纳米管的制备、结构观察及低场致电子发射性能研究

采用高温热解法，以乙二胺为前驱液，在沉积有铁催化剂的p型硅（111）基底上制备出了定向生长的CNx纳米管.利用扫描电子显微镜、高分辨率透射电子显微镜和拉曼光谱对CNx纳米管进行了形貌观察和表征.CNx纳米管的高度在20?μm左右，直径在50—100nm之间，具有明显的“竹节状”结构，结晶有序度较差.对CNx纳米管薄膜进行低场致发射性能测试：外加电场为1.4V/μm，观察到20?μA /cm2发射电流，外电场升至2.54V/μm时发射电流达到1.280mA/cm2，在较高外电场下，没有发现电流“饱和”.这比 关键词： CNx纳米管 高温热解 “竹节状”结构 场致发射