Generalized KKM Type Theorems in FC-Spaces with Applications (I)

The class KKM(X,Y) (resp., s-KKM(X,Y,Z)) of set-valued mappings with KKM (resp., s-KKM) property is introduced in FC-spaces without any convexity structure. Some generalized KKM (resp., s-KKM) type theorems are proved in FC-spaces under much weak assumptions. As applications, some new section theorems and coincidence theorems are established in FC-spaces. These theorems generalize many known results in literature. The further applications of these results will be given in a follow-up paper.     

过量Zn对β-Zn4Sb3热电性能影响的研究

采用真空熔融缓冷方法制备了单相β-Zn4Sb3以及含有过量Zn的β-Zn4Sb3块体热电材料.在300—700K的温度范围内测试了材料的电导率、Seebeck系数和热导率,研究了β-Zn4Sb3化合物中过量Zn的分布状态及其对材料热电性能的影响规律.结果表明：过量的Zn作为第二相较均匀的分布在β-Zn4Sb3的晶界上,随着Zn含量增加,材料电导率和热导率上升,Seebeck系数下降,Zn第二相的引入能有效提高材料的功率因子,Zn过量2at%的材料在700K时其ZT值达到1.10.     

A family of skew Hadamard difference sets

In 1933 a family of skew Hadamard difference sets was described by Paley using matrix language and was called the Paley-Hadamard difference sets in the literature. During the last 70 years, no new skew Hadamard difference sets were found. It was conjectured that there are no further examples of skew Hadamard difference sets. This conjecture was proved to be true for the cyclic case in 1954, and further progress in favor of this conjecture was made in the past 50 years. However, the conjecture remains open until today. In this paper, we present a family of new perfect nonlinear (also called planar) functions, and construct a family of skew Hadamard difference sets using these perfect nonlinear functions. We show that some of the skew Hadamard difference sets presented in this paper are inequivalent to the Paley-Hadamard difference sets. These new examples of skew Hadamard difference sets discovered 70 years after the Paley construction disprove the longstanding conjecture on skew Hadamard difference sets. The class of new perfect nonlinear functions has applications in cryptography, coding theory, and combinatorics.     

1.54μmEr3+,Yb3+共掺玻璃激光器的速率方程及数值分析

LD抽运共掺Er,Yb玻璃激光器中的跃迁过程较复杂,针对双掺离子之间的能量传递和Er3+的多种跃迁过程,给出了详细的准三能级系统的速率方程,在合理简化后进行了数值分析,分析了Er3+掺杂浓度和介质长度、抽运光斑、输出镜透过率、谐振腔长、抽运光的椭圆度等因素对激光阈值及斜率效率的影响. 关键词： 1.54μm激光 Er3+玻璃 速率方程 数值分析     

长波长大应变InGaAs/InGaAsP分布反馈激光器的材料生长与器件制备

采用低压金属有机化合物气相沉积法(LP-MOCVD)生长并制作了1.6—1.7μm大应变InGaAs/InGaAsP分布反馈激光器.采用应变缓冲层技术，得到质量良好的大应变InGaAs/InP体材料.器件采用了4个大应变的量子阱，加入了载流子阻挡层改善器件的温度特性.1.66μm和1.74μm未镀膜的3μm脊型波导器件阈值电流低(小于15mA)，输出功率高(100mA时大于14mW).从10—40℃，1.74μm激光器的特征温度T₀=57K，和1.55μm InGaAsP分布反馈激光器的特征温度相当. 关键词： MOCVD InGaAs/InGaAsP 应变量子阱 分布反馈激光器     

偶氮苯衍生物三阶非线性的四波混频研究

用皮秒Ｎｄ：ＹＡＧ激光器的倍频光（５３２ｎｍ）对具有离域π－共轭电子云结构的偶氮苯类样品材料作简并四波混频补给，测得三阶非线性电极化率ｘ＾（３）和它们的时间响应分别为１０＾－９ｅｓｕ和２０ｐｓ，并对影响ｘ＾（３）的瞬时光栅作用和ｘ＾（３）的响应时间人了讨论。     

Equivalent boundary integral equations for plane elasticity

Indirect and direct boundary integral equations equivalent to the original boundary value problem of differential equation of plane elasticity are established rigorously. The unnecessity or deficiency of some customary boundary integral equations is indicated by examples and numerical comparison.     

PIXE analysis of the Mn-doped content in Ga1-xMnxN film grown by LP-MOVPE

Summary Department of Technical Physics, School of Physics, Peking Unive     

电热泵用于蔬菜温室供热的经济性分析

现代化蔬菜温室是我国都市农业发展中的一个重要组成部分，目前这类温室的冬季加热均以燃煤方式为主．伴随着越加严重的城市环境污染，温室供热系统也面临着改造问题，需要引入清洁供热方式，热泵供热是其中的一种．本文以上海地区现代化蔬菜温室为研究对象，分析了蔬菜温室中使用电热泵供热的运行成本，并与燃煤供热方式进行了对比．就热泵供热系统在温室中的应用前景及可行性、经济性进行了分析，为热泵在温室供热系统中的应用提供了可参考依据．     

Patterned uniformly orientated silicon nanocrystallite films and efficient field emission characteristics

Patterned uniformly (100)-orientated silicon nanocrystallite (SiNC) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and microstructure characteristics of the films were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and atomic force microscopy. The efficient field emission with low turn-on field of about 3.2 V/μm at current density of 0.1 μA/cm² was obtained. The emission current density from the SiNC films reached 1 mA/cm² under a bias field of about 11 V/μm. The experimental results demonstrate that the SiNC films have great potential applications for flat panel displays.