All-optical switching on a silicon chip

We present an experimental demonstration of fast all-optical switching on a silicon photonic integrated device by employing a strong light-confinement structure to enhance sensitivity to small changes in the refractive index. By use of a control light pulse with energy as low as 40 pJ, the optical transmission of the structure is modulated by more than 97% with a time response of 450 ps.     

Lattice imaging study of in-depth disordering of Si-implanted GaAs

Cross-sectional high resolution transmission electron microscopy has been used to obtain direct information on the in-depth radiation damage distribution of weakly damaged GaAs by Si-ion implantation. A comparison is made between the experimental data and the calculated (using TRIM computer simulations) deposited energy by nuclear stopping for the same conditions. In particular a diffusion zone, with 200–300 Å width, of high point defect concentration beyond the damage peak is detected. These point defects are interpreted as As interstitials. By direct observation, information concerning the damage- and radiation-enhanced diffusion in implanted III–V compound semiconductors is obtained.     

On the inelastic-loss approximation for keV-energy ion collisions in solids

Inelastic energy-loss in a single collisionT _e and related stopping cross-sectionT _e based on the Firsov model are evaluated for different screening functions in the elastic interaction potentials. Various approximations ofT _e andS _e for keV-ions in solids are discussed.     

The effect of ferric ions on the conductivity of various types of polymer cation exchange membranes

Recently, rejuvenated interest to fuel cells has posed a number of problems regarding the polymer electrolyte membrane properties and their behaviour in different electrolyte solutions. This work was dedicated to study the conductivity of H⁺-, Fe³⁺- and mixed H⁺/Fe³⁺-forms of cation exchange membranes Neosepta CMS, Nafion 112, 115 and 117 and Selemion HSF under conditions similar to these in the Fe³⁺/Fe²⁺–H₂/H⁺ fuel cell in the range of current densities 0–90 mA/cm². It was found that the conductivities of these membranes in 1.09 M H₂SO₄ solution decrease in the following order: Selemion HSF › Nafion 117 ≈ Nafion 115 ≈ Neosepta CMS › Nafion 112. Conductivities of perfluorinated membranes were discussed in terms of Hsu and Gierke percolation theory [20]. The Fe³⁺-forms of Nafion membranes studied displayed a monotonous decline in the resistance when current increased, which is a manifestation of gradual conversion of the Fe³⁺-form into H⁺-form of these membranes. Unlike the Nafion membranes, the Fe³⁺-forms of Neosepta CMS and Selemion HSF membranes exhibited a sharp jump of resistance at relatively high current densities (more than 70 mA/cm²) that is most probably a result of concentration polarization.     

Computer studies of boron ion channeling in silicon single crystals

The motion of 200 keV B ions in the [111] direction in a silicon single crystal has been investigated using a computer simulation method. Profiles of the depth distribution of implanted ions for both an ideal crystal and a crystal with thermal vibrations have been obtained. A study of the defect distribution has been carried out.     

Subvarieties of the matrix variety of second order

LetR _s be the subalgebra ofM ₂(K[t]/(t ^s )) generated bye ₁₁,e ₂₂,te ₁₂ andte ₂₁, whereK is a field of characteristic 0,K[t] is the polynomial algebra in one variablet and (t ^s ) is the principal ideal inK[t], generated byt ^s . The main result of this paper is that we have described theT-idealT(R _s ). Besides the two matrix polynomial identities — the standart identityS ₄ and the identity of Hall, thisT-ideal is generated by one more explicitly given identity. The algebrasR _s are interesting due to the fact that the proper identities of any subvarietyu of the variety ?=varM ₂(K), generated by the matrix algebraM ₂(K) of second order overK, asymptoticaly coincide with the proper identities of someR _s .