A radiative model with a naturally mild neutrino mass hierarchy

Many neutrino mass models postulate the existence of at least two extra fermions in order to account for the measured solar and atmospheric mass splittings. In these models, however, the predicted hierarchy between the two mass splittings is generically much larger than the observed one, unless extra flavor symmetries are introduced. We present in this Letter a radiative neutrino mass model consisting of the Standard Model extended by one heavy fermionic singlet and two scalars which predicts, under very general conditions, a neutrino mass hierarchy in qualitative agreement with the experimental value.     

Ramsey Results for Cycle Spectra

Let denote the set of lengths of cycles of a graph G of order n and let denote the complement of G. We show that if , then contains all odd ? with and all even ? with , where and denote the maximum odd and the maximum even integer in , respectively. From this we deduce that the set contains at least integers, which is sharp.     

Analytic approximations of queues with lightly- and heavily-correlated autoregressive service times

We consider a single-server queueing system. The arrival process is modelled as a Poisson process while the service times of the consecutive customers constitute a sequence of autoregressive random variables. Our interest into autoregressive service times comes from the need to capture temporal correlation of the channel conditions on wireless network links. If these fluctuations are slow in comparison with the transmission times of the packets, transmission times of consecutive packets are correlated. Such correlation needs to be taken into account for an accurate performance assessment. By means of a transform approach, we obtain a functional equation for the joint transform of the queue content and the current service time at departure epochs in steady state. To the best of our knowledge, this functional equation cannot be solved by exact mathematical techniques, despite its simplicity. However, by means of a Taylor series expansion in the parameter of the autoregressive process, a “light-correlation” approximation is obtained for performance measures such as moments of the queue content and packet delay. We illustrate our approach by some numerical examples, thereby assessing the accuracy of our approximations by simulation. For the heavy correlation case, we give differential equation approximations based on the time-scale separation technique, and present numerical examples in support of this approximation.     

Ferromagnetism and Kondo insulator behavior in the disordered periodic Anderson model

The effect of binary alloy disorder on the ferromagnetic phases of f-electron materials is studied within the periodic Anderson model. We find that disorder in the conduction band can drastically enhance the Curie temperature T{c} due to an increase of the local f moment. The effect may be explained qualitatively and even quantitatively by a simple theoretical ansatz. The emergence of an alloy Kondo insulator at noninteger filling is also pointed out.     

Detection of quantum critical points by a probe qubit

Quantum phase transitions occur when the ground state of a quantum system undergoes a qualitative change when an external control parameter reaches a critical value. Here, we demonstrate a technique for studying quantum systems undergoing a phase transition by coupling the system to a probe qubit. It uses directly the increased sensibility of the quantum system to perturbations when it is close to a critical point. Using an NMR quantum simulator, we demonstrate this measurement technique for two different types of quantum phase transitions in an Ising spin chain.     

Base doping and dopant profile control of SiGe npn and pnp HBTs

Incorporation of high doping concentrations and the creation and maintaining of steep doping profiles during processing are key enabler for high level RF performance of heterojunction bipolar transistors (HBTs). In this paper, we discuss results of base doping and dopant profile control for npn and pnp SiGe HBTs fabricated within 0.25 μm BiCMOS technologies. High level of electrically active B and P doping concentrations (up to 10²⁰ cm⁻³) have been incorporated into SiGe. By adding C to SiGe steep doping profiles have been maintained due to the prevention of dopant diffusion during device processing. It is shown that broadening of P doping profiles caused by segregation could be reduced by lowering the deposition temperature for the SiGe cap. B and P atomic layer doping is shown to be suitable for the creation of steep and narrow doping profiles. This result is demonstrating the capability of the atomic layer processing approach for future devices with critical requirements of dopant dose and location control.