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991.
The intermediate and forward gamma detectors of EHS are used to reconstructπ°'s produced by 360 GeV/cpp interactions in the Rapid Cycling Bubble Chamber (RCBC). Using thepp forwardbackward symmetry, the inclusiveπ° production cross section is obtainedσ π°=(132±11) mb. The averageπ° multiplicity is determined as a function of the charged particle multiplicity. The (1?x) dependence is given for differentp T regions.  相似文献   
992.
Measurements of single-electron production in proton-proton collisions at the CERN ISR are presented for five centre-of-mass energies √s = 23.5, 30.6, 44.8, 52.7, and 62.4 GeV. The invariant cross sections for single electrons with transverse momenta of 0.60 to 4.7 GeV/c are given. Measurements of electron-positron pairs and measurements of charged hadrons produced in association with the single electrons, are also reported.  相似文献   
993.
The problem of scattering in multimode optical fibres is treated in a rigorous way by means of both a ray and a statistical approach. These two methods are interlaced and harmonized. Applications to microbending, ellipticity, core radius and maximum numerical aperture variations, and fluctuations of index profile shape are performed. Useful results about power distribution and fibre attenuation are derived in each case.  相似文献   
994.
The article discusses the influence of an oligomeric resin, hydrogenated oligo (cyclopentadiene) (HOCP), on the morphology and properties of its blends with high density polyethylene (HDPE). HDPE/HOCP blends after solidification contain three phases: the crystalline phase of HDPE and two amorphous phases, one rich in amorphous HDPE and the other in HOCP. DSC thermograms and the loss modulus behaviors show that the γ transition is influenced by HOCP molecules and, in addition to the αc transition of HDPE, there is another transition that is attributed to the HOCP-rich phase. The hypothesis of the two amorphous phases is confirmed by the optical microscopy observations performed on isothermally crystallized blend films. © 1994 John Wiley & Sons, Inc.  相似文献   
995.
Romano  P.  Di Leo  R.  Nigro  A.  Cucolo  A. M.  Dabrowski  B.  Radaelli  P. G. 《Il Nuovo Cimento D》1994,16(10):1885-1888
Il Nuovo Cimento D - We have realized planar tunnel junctions using both Y123 and Y124 single crystals as base electrodes and Pb as counterelectrode. The crystals, with T c=90 K (Y123) and T c=80 K...  相似文献   
996.
Results are presented on and production in p–W and S–W interactions at 200 GeV/c/nucleon measured via the dimuon decay in a large kinematic region. The data are normalized to the charged particle multiplicity in the same rapidity interval. They have been collected using the HELIOS/3 muon spectrometer at the CERN SPS. The ratio , where is the relevant resonance branching fraction, increases between proton and sulphur projectiles, and is somewhat enhanced going from peripheral to central S–W interactions. This results from an increase in the number of produced 's per charged particle. The ratio is measured in different intervals of p and rapidity. It is not clearly dependent on p, but is larger at higher rapidities. production, likewise normalized to charged multiplicity, is significantly lower in S–W compared to p–W interactions. Received: 27 October 1997 / Revised version: 5 March 1998 / Published online: 13 July 1998  相似文献   
997.
The growth of microbial cultures is studied by means of stochastic processes. A compartment structure is used to take into account cell maturation stages, having an inflow of cells from one compartment to the next. Dilution and cell division are also considered. A differential equation, first proposed by Kiefer, is studied and the expected number of cells in each compartment is found for several interesting cases.  相似文献   
998.
999.
Summary In this paper we report on the frequency dependence of the AC conductivity of porous silicon in the range 10 Hz-100 kHz. Two types of testing devices have been fabricated on three different series of samples formed electrochemically using as a starting materialptype,n -type andn +-type silicon substrates. For frequencies less than 20-40 kHz the conductivity is found to follow a sublinear frequency dependence. This behaviour is typical of a carrier transport mechanism determined by an anomalous diffusion process. At higher frequencies we find that surface states influence the transport mechanism. This suggests a double-channel transport mechanism: one related to porous-silicon “volume” properties and the other more connected to the “surface” itself. Paper presented at the III INSEL (Incontro Nazionale sul Silicio Emettiore di Luce) Torino, 12–13 October 1995.  相似文献   
1000.
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