基于倏逝波的光纤生物传感器研究

构建了一种以光纤束作为激发光信号和荧光信号传输通道的光纤生物传感器结构.根据光纤探针的倏逝波理论和模式匹配理论对光纤探针的几何形状进行了设计,制作了数组光纤探针并根据需要对其中一部分进行荧光标记.选择了光纤探针置于空气中和水溶液中两种情况,对光纤传感器系统进行了信号检测实验,对比标记了的和未标记的相同几何结构参数的光纤探针两者在系统中被探测的信号差异.从二者的差别区分出系统所探测的倏逝波激发的荧光信号,证明了该光纤传感器系统的可行性.     

Attenuation correction for dedicated breast PET using only emission data based on consistency conditions

Accurate attenuation correction is required in dedicated breast PET imaging systems for image artifact removal and quantitative studies. In this study, a method using only emission data based on consistency conditions is proposed for attenuation correction in breast PET imaging systems. The consistency conditions are exploited to evaluate the accuracy of the estimated attenuation distribution and find the appropriate parameters that yield the most consistent attenuation distribution with the measured emission data. We have proved the validity of the method with experimental investigations and single-patient studies using a dedicated breast PET. The results show that the method is capable of accurately estimating the attenuation distribution of a uniform attenuator from the experimental data with various relatively low activities. The results also show that in single-patient studies, the method is robust for the irregular boundary of breast tissue and provides a distinct improvement in image quality.     

Ni熔体凝固过程中临界晶核和亚临界晶核的分子动力学模拟

本文用分子动力学模拟研究了Ni熔体以不同冷速凝固后微观结构的演变规律, 并通过理论计算确定出了Ni熔体凝固后获得理想非晶的临界条件. 模拟结果发现冷速小于10¹¹ K/s时, Ni 熔体凝固后形成晶态组织; 冷速在10¹¹ K/s到10^14.5 K/s之间时, Ni熔体凝固后形成由晶态结构与非晶态结构组成的混合组织. 冷速小于10¹⁰ K/s, Ni 熔体凝固后形成的晶态组织具有fcc结构; 冷速在10¹⁰ K/s到10^14.5 K/s之间时, Ni熔体凝固后组织中的晶态由fcc和hcp结构层状镶嵌排列构成. 通过分析模拟结果和计算结果, 确定出了Ni熔体凝固后形成理想非晶的临界冷速为10^14.5 K/s. 并发现Ni熔体中临界晶核(冷速等于10^14.5 K/s)和亚临界晶核(冷速大于10^14.5 K/s) 均由fcc和hcp组成层状偏聚结构, 这表明Ni熔体中生长的晶体、临界晶核和晶胚的结构是相同的. 关键词： 分子动力学模拟 晶体团簇 临界冷速 结构     

HL-2M 磁体系统安装中的定位与测量

为提高磁体系统安装精度,在 HL-2M 集成大厅建立 63 个基准点构成测量基准网,并利用激光跟 踪仪等高精度测量设备建立每个磁体的局部坐标系,测量特征点的局部坐标;基于测量基准网和公共测量点,采 用最佳拟合得到坐标转换矩阵,以此得到特征点在测量基准网的位置,指导磁体安装。完成安装后的中心柱同支 撑基础的同轴度为∅2.03mm;PF1~PF4 线圈安装标高偏差为±0.5mm,与中心柱的同轴度为∅2.60mm;PF5/6/7/8 线圈与中心柱的同轴度偏差小于∅3.00mm,标高偏差在[−1mm, 1mm]区间内。基于以上方法所得到的线圈安装精 度都满足设计需求。     

液态锂限制器的铺展性测试平台设计及初步实验

为研究液态锂在电磁驱动限制器表面的铺展特性,设计了与EAST限制器接口相同的限制器测试平台.该平台运行时真空环境可达10?4Pa,对被测限制器可加热至350℃.在限制器锂回路管道上,利用外部2T水平磁场以及竖直方向施加的最大为200A的直流电流,形成电磁驱动力驱动下的锂液循环回路.测试平台设有顶部和正面两个观察窗,能够...     

α-decay study of 218Ac and 221Th in 40Ar+186W reaction

In this study,²¹⁸Ac and ²²¹Th nuclides were produced via the heavy-ion induced fusion evaporation reaction ⁴⁰Ar+¹⁸⁶W.Their decay properties were studied with the help of the gas-filled recoil spectrometer SHANS and a digital data acquisition system.The cross section ratio between ²²²Pa and ²¹⁸Ac was extracted experimentally,withmeasured value 0.69(9).Two new possible α decay branches to ²²¹Th are suggested.The valence neutron configurations for the daughter ²¹⁷Ra are discussed in terms of the hindrance factors.     

稳恒磁场对Fe-Fe50 wt.%Si扩散偶中间相生长的影响

本文考察了Fe-Fe50 wt.%Si扩散偶在1200℃ 无磁场以及稳恒磁场下扩散层生长规律. 利用真空浇注强制冷却技术制备Fe-Fe50 wt.%Si扩散偶, 将制备的扩散偶进行1200℃不同磁感应强度下的热处理. 对获得热处理后试样进行SEM与EDS线扫描分析, 结果表明, 无论无磁场还是稳恒磁场下Fe-Fe50 wt.%Si扩散偶均生成两个扩散层, 即FeSi相层和Fe-Si固溶体层, 并且发现0.8 T下的两个扩散层宽度均小于0 T磁场下试样. 按照抛物线规律, 计算了扩散偶中间扩散层的互扩散系数, 发现0.8 T磁场下FeSi相层和Fe-Si固溶体层的互扩散系数较无磁场下 分别降低了26.7%与34.1%. 通过对磁吉布斯自由能的计算, 发现0.8 T磁场对扩散激活能Q的影响不足以影响扩散过程. 但扩散过程中原子振动频率ν会受到磁场的影响, 进而影响扩散常数D₀, 磁场对原子振动频率的影响可以用拉莫尔旋进理论进行解释. 关键词： Fe-Fe50wt.%Si扩散偶 稳恒磁场 FeSi相 Fe-Si固溶体     

How much information is needed to be the majority during the binary-state opinion formation?

In this paper, we try to propose a toy model, which follows the majority rule with the Fermi function, to uncover the role of the heterogeneous interaction between individuals in opinion formation. In order to do this, we define the impact factor I_Fi$I{F}_i$, says individual i$i$, as the exponential function of its connectivity _ki$k_i$ with the tunable parameter β$\beta$. β$\beta$ also shows the public information that can be collected by individuals in the system. We realize our model in scale-free networks with mean connectivity 〈k〉$〈k〉$. We find that much more public information (β>_β2$\beta >{\beta }_2$) and less public information (β<_β1$\beta <{\beta }_1$) cannot let either of the two opinions be the majority during the opinion formation. Furthermore, _β1${\beta }_1$ is a constant and equal to −0.76(±0.04)$-0.76(\pm 0.04)$, and _β2${\beta }_2$ decreases as a power-law function of the mean connectivity 〈k〉$〈k〉$ of the network. Our work can provide some perspectives and tools to understand the diversity of opinion in social networks.     

Measurement-induced disturbance and thermal negativity in 1D optical lattice chain

We study the measurement-induced disturbance (MID) in a 1D optical lattice chain with nonlinear coupling. Special attention is paid to the difference between the thermal entanglement and MID when considering the influences of the linear coupling constant, nonlinear coupling constant and external magnetic field. It is shown that MID is more robust than thermal entanglement against temperature T$T$ and external magnetic field B$B$, and MID may reveal more properties about quantum correlations of the system, which can be seen from the point of view that MID can be nonzero when there is no thermal entanglement and MID can detect the critical point of quantum phase transition at finite temperature.     

TiO2 Nanotube Array/Monolayer Graphene Film Schottky Junction Ultraviolet Light Photodetectors

Schottky junctions made from a titanium dioxide nanotube (TiO₂NT) array in contact with a monolayer graphene (MLG) film are fabricated and utilized for UV light detection. The TiO₂NT array is synthesized by the anodization and the MLG through a simple chemical vapor deposition process. Photoconductive analysis shows that the fabricated Schottky junction photodetector (PD) is sensitive to UV light illumination with good stability and reproducibility. The corresponding responsivity (R), photoconductive gain (G), and detectivity (D*) are calculated to be 15 A W^?1, 51, and 1.5 × 10¹² cm Hz^1/2 W^?1, respectively. It is observed that the fabricated PD exhibits spectral sensitivity and a simple power‐law dependence on light intensity. Moreover, the height of the Schottky junction diode is derived to be 0.59 V by using a low temperature I–V measurement. Finally, the working mechanism of the TiO₂NT array/MLG film Schottky junction PD is elucidated.