利用TEM对Si基片与MgO基片上生长的薄膜特性的研究

对生长在Si和MgO单晶基片上的不同厚度的单层NbN薄膜、双层薄膜AlN/NbN以及三层薄膜NbN/AlN/NbN应用透射电子显微镜(Transmission Electron Microscope,TEM)技术进行了分析研究,对这几种薄膜样品的微观结构、薄膜厚度以及各个边界的一些直观细节给出了较为清晰的图像。由透射电子显微镜的电子衍射图案计算了薄膜和单晶衬底的晶格常数,并与我们以前采用X射线衍射技术分析的结果进行了比较,结果有很好的吻合。     

A.第十九届国际高速摄影和光子学会议概况

本文对第19届国际高速摄影与光子学会议做了简介,主要谈到了光机式相机、高速视频技术、全息和干涉计量。     

Differences in Self-Rated, Perceived, and Acoustic Voice Qualities Between High- and Low-Fatigue Groups

Objectives

The present study was performed to examine which factors among self-rated scales, perceptual evaluations, and acoustic parameters, calculated from sustained vowels, are reliable indicators of physical and mental fatigues.

Methods

A total of 73 volunteers (male:female, 52:21), aged 19–24 years, were enrolled in this study. We defined the high- and low-fatigue groups using the Chalder Fatigue Scale score. For assessment of self-rated symptoms, each subject was asked to complete Voice Handicap Index (VHI) and Voice Rating Scale (VRS). For perceptual evaluations, three clinicians assessed each subject’s vocal quality on the Grade, Roughness, Breathiness, Asthenia, Strain Scale. For acoustic analysis, each subject was asked to produce sustained vowels /a/, /e/, /i/, /o/, and /u/ for 3 seconds. Then, the habitual fundamental frequency (F₀), jitter, shimmer, F₀ tremor, mean F₀, standard deviation of F₀, maximum F₀, minimum F₀, normalized noise energy, harmonic-to-noise ratio (HNR), signal-to-noise ratio (SNR), amplitude tremor, and ratio within 2–4 kHz were calculated using Dr. Speech software.

Results

In men, VHI, VRS, F₀ tremor, shimmer, HNR, SNR, and amplitude tremor were related to mental fatigue. In women, only VHI was related to physical fatigue, and none of the acoustic parameters was related to the fatigue score. Perceptual evaluations were not related to fatigue in men or women.

Conclusions

These findings suggest that self-rated symptoms and acoustic parameters related to voice quality are indicative of mental fatigue, and these features are prominent in men.     

光纤放大器中的受激布里渊散射阈值

 从受激布里渊散射(SBS)耦合波理论出发,根据双包层光纤放大器中的受激布里渊散射阈值模型,理论仿真了信号带宽、纤芯直径、放大器增益对SBS阈值的影响,并从实验上研究了单频百纳秒脉冲信号在掺镱双包层光纤放大器中的受激布里渊散射现象。实验中输入脉冲信号重复频率1 Hz,脉宽200 ns,对不同的输入脉冲信号放大,前向放大脉冲在脉冲能量660 nJ、峰值功率3.3 W时出现畸变,产生后向SBS窄脉冲,达到了SBS阈值,实验计算的SBS阈值与理论分析结果基本一致。     

Improvement of <Emphasis Type="Italic">n</Emphasis>-ZnO/<Emphasis Type="Italic">p</Emphasis>-Si photodiodes by embedding of silver nanoparticles

The photo-current of n-ZnO/p-Si heterojunction photodiodes was improved by embedding Ag nanoparticles in the interface (ZnO/nano-P_Ag/p-Si), and the ratio between photo- and dark-current increased by about three orders more than that of a n-ZnO/p-Si specimen. The improvement in the photo-current resulted from the light scattering of embedded Ag nanoparticles. The I–V curve of n-ZnO/p-Si degraded after thermal treatment (A-ZnO/p-Si) because the silicon robbed the oxygen from ZnO to form amorphous silicon dioxide and left an oxygen vacancy. Notably, the properties of ZnO/nano-P_Ag/p-Si were better in the time-dependent photoresponse under 10 V bias. Ag nanoparticles (15–20 nm) scattered the UV light randomly and increased the probability for the absorption of ZnO to enhance the properties of the photodiode.     

Visible photoluminescence of nanometer-sized SiGe/Si heterostructure fabricated by ion implantation

An innovative fabrication technique for the nanometer-sized SiGe/Si heterostructure was developed in this study. Ge was induced in Si substrate by two-step ion implantation. The spherical SiGe nanoclusters are self-assembled in the Si substrate by subsequent rapid thermal annealing at 1,100 °C. The diameter of the spherical SiGe nanoclusters is 5–7 nm. Visible photoluminescence from this nanometer-sized SiGe/Si heterostructure at room temperature was investigated. We found three peak energies of visible luminescence spectra at 1.97, 2.13, and 2.16 eV, respectively. The luminescence intensity depends on the number of the nanoclusters and will be decreased because of the micro-defects around the heterostructure, which is discussed in detail.     

Spectroscopy of stripe order in La1.8Sr0.2NiO4 using resonant soft x-ray diffraction

Strong resonant enhancements of the charge-order and spin-order superstructure-diffraction intensities in La1.8Sr0.2NiO4 are observed when x-ray energies in the vicinity of the Ni L2,3 absorption edges are used. The pronounced photon-energy and polarization dependences of these diffraction intensities allow for a critical determination of the local symmetry of the ordered spin and charge carriers. We found that not only the antiferromagnetic order but also the charge-order superstructure resides within the NiO2 layers; the holes are mainly located on in-plane oxygens surrounding a Ni2+ site with the spins coupled antiparallel in close analogy to Zhang-Rice singlets in the cuprates.     

Observation of B0-->pi0pi0

We report the observation of the decay B0-->pi(0)pi(0), using a 253 fb(-1) data sample collected at the Upsilon(4S) resonance with the Belle detector at the KEKB e(+)e(-) collider. The measured branching fraction is B(B0-->pi(0)pi(0))=(2.3(+0.4+0.2)(-0.5-0.3))x10(-6), with a significance of 5.8 standard deviations including systematic uncertainties. We also make a measurement of the direct CP violating asymmetry in this mode.     

Measurement of the wrong-sign decays D0 --> K+ pi- pi0 and D0 --> K+ pi- pi+ pi-, and search for CP violation

Using 281 fb-1 of data from the Belle experiment recorded at or near the (4S) resonance, we have measured the rates of the "wrong-sign" decays D0 --> K+ pi- pi0 and D0 --> K+ pi- pi+ pi- relative to those of the Cabibbo-favored decays D0 --> K- pi+ pi0 and D0 --> K- pi+ pi+ pi-. These wrong-sign decays proceed via a doubly Cabibbo-suppressed amplitude or via D0-D0 mixing; the latter has not yet been observed. We obtain R(WS)(K pi pi0) = [0.229 +/- 0.015(stat)(+0.013)(-0.009)(syst)]% and R(WS)(K3pi) = [0.320 +/- 0.018(stat)(+0.018)(0.013)(syst)]%. The CP asymmetries are measured to be -0.006 +/- 0.053 and -0.018 +/- 0.044 for the K+ pi- pi0 and K+ pi- pi+ pi- final states, respectively.