Basic principles of technological shaping of optical properties and radiation hardness of PWO crystals

Technological conditions ensuring growth of optically homogeneous lead tungstate (PWO) crystals are reported. It is shown that the basic scintillator characteristics of PWO grown from highly purified raw material and properly doped with lanthanides are mainly determined by inclusions of oxides W_1−yL_yO_3−x (L=Y, La, Gd; 0<x<0.3). Moreover, surface-located inclusions with structure close to tungstenite may also be of importance. It is demonstrated that the scintillation properties can be intentionally designed by varying the oxygen content in the inclusions x and the surface structure. The optimal value for x and the most favorable surface structure are achieved by proper thermal regimes and environment content during the crystal annealing. The results enabled low-cost fabrication of PWO scintillators with steady and reproducible characteristics acceptable for the CERN project ALICE and ensured production of PWO on an industrial scale by “North Crystals” company at a rate of 125–135 crystals per year from every growth apparatus.     

Optical properties of a high-efficiency glass ceramic X-ray storage phosphor

The turbidity, photoluminescence, and photo-stimulated luminescence (PSL) of fluorozirconate glass containing barium chloride nano- and micro-crystals have been measured for samples prepared by isochronal (70 min) annealing over a temperature range of 220–283°C, and correlated with the microstructure as determined by X-ray diffraction measurements. Crystallization of hexagonal phase barium chloride commences at around 220°C, but until 275°C the material retains excellent transparency although it displays negligible PSL. Between 275°C and 277°C, the hexagonal phase converts to the orthorhombic phase, the transparency abruptly decreases, and the PSL rises to a value of around 13% of that found for the commercial storage phosphor BaFBr:Eu. For a slightly higher temperature of 280°C, new phases appear which correspond to the onset of bulk crystallization, and at 283°C the relative PSL rises to 33%, while the transparency falls further. The trade-off between optical transparency and PSL over this narrow temperature window for X-ray imaging plate applications is briefly discussed.     

The response of thermally and optically stimulated luminescence from Al2O3:C to high-energy heavy charged particles

The thermoluminescence (TL) and optically stimulated luminescence (OSL) response of Al₂O₃ dosimeters to high-energy heavy charged particles (HCP) has been studied using the heavy ion medical accelarator at Chiba, Japan. The samples were Al₂O₃ single-crystal chips, of the type usually known as TLD-500, and Luxel^TM dosimeters (Al₂O₃:C powder in plastic) from Landauer Inc. The samples were exposed to ⁴He (150 MeV/u), ¹²C (400 MeV/u), ²⁸Si (490 MeV/u) and ⁵⁶Fe (500 MeV/u) ions, with linear energy transfer values covering the range from 2.26 to 189 keV/μm in water and doses from 1 to 100 mGy (to water). A ⁹⁰Sr/⁹⁰Y beta source, calibrated against a ⁶⁰Co secondary standard, was used for calibration purposes. For OSL, we used both continuous-wave OSL measurements (CW-OSL, using green light stimulation at 525 nm) and pulsed OSL measurements (POSL, using 532 nm stimulation from a Nd:YAG Q-switched laser). The efficiencies (η_HCP,γ) of the different HCPs at producing OSL or TL were observed to depend not only upon the linear energy transfer (LET) of the HCP, but also upon the sample type (single crystal chip or Luxel^TM) and the luminescence method used to define the signal—i.e. TL, CW-OSL initial intensity, CW-OSL total area, or POSL. Observed changes in shape of the decay curve lead to potential methods for extracting LET information of unknown radiation fields. A discussion of the results is given, including the potential use of OSL from Al₂O₃ in the areas of space radiation dosimetry and radiation oncology.     

Luminescence properties of α-Al2O3 dosimetric crystals exposed to a high-current electron beam

The spectra of pulsed cathodoluminescence (PCL) and thermoluminescence (TL) in TLD-500 detectors, which were exposed to a strong beam from a pulsed electron accelerator, have been studied. Additional bands in the PCL spectrum and new peaks in the TL curves, which are due to impurity ions, have been revealed. Luminescence bands of F- and F⁺-centers cannot be used in the dosimetry of strong electron beams using TLD-500 detectors because of the saturation of dose dependence and the decrease in the TL yield. It is shown that high doses from these beams can be measured by recording TL in the luminescence band of impurity titanium ions.     

New developments in X-ray storage phosphors

We found a significant PSL effect in Eu²⁺-doped fluorozirconate glasses (ZBLAN) which were additionally doped with Br⁻ or Cl⁻ ions. The PSL is attributed to the characteristic emission of Eu²⁺ present in nano-crystallites of BaBr₂ or BaCl₂, which form in the glass upon annealing. The metastable hexagonal form of BaX₂ (X=Br,Cl) is always formed first before it is converted into the stable orthorhombic form. The particle size increases upon annealing and so does the PSL efficiency of the glass ceramic. However, there is a saturation of the PSL efficiency, which is for Br⁻ doping about 9% and for Cl⁻-doping about 80% of the Eu-doped BaFBr standard. The particle size was determined by transmission electron microscopy (TEM). The TEM results show a clear tendency for bigger particles for longer annealing at the expense of its number. The particle size for the most efficient phosphor is about 100 nm.     

Evolution of the high power THz source program at Jefferson Lab

We report the evolution of the high power THz source program at Jefferson Lab. The source is based on coherent synchrotron radiation in which short bunches of relativistic electrons radiate when traversing a dipolar magnetic field. In our first accelerator we produced 20 W of broadband THz light. Our upgraded accelerator with higher current and improved THz extraction optics will considerably enhance the output power to >100 W. In this paper we describe the source in some detail and present theoretical calculations for the upgrade.     

Resonant-cavity-enhanced photodetectors and LEDs in the mid-infrared

In this paper we outline the use of resonant-cavity enhancement for increasing the exterior coupling efficiency of photodetectors and light-emitting diodes (LEDs) in the mid-infrared (MIR) spectral region. This method is potentially very important in the MIR because encapsulation is not presently feasible due to the lack of suitable materials. Among other potential applications, resonant-cavity-enhanced (RCE) photodetectors and LEDs could be particularly suitable for greenhouse gas detection because of their ‘pre-tunable’ spectrally narrowed resonantly enhanced peaks. We also present the optical characterization of an InAs RCE photodetector aimed at the detection of methane gas (λ≈3.3 μm), and an InAs/InAs_0.91Sb_0.09 resonant-cavity LED (RCLED) aimed at carbon dioxide gas (λ≈4.2 μm). The high peak responsivity of the RCE photodetector was 34.7 A/W at λ=3.14 μm, and the RCLED peaked at λ=3.96 μm. These are among the longest operating wavelengths for III–V RCE photodetectors and RCLEDs reported in the literature.     

Application of ultrafine-dispersed diamonds in electroplating

The results obtained upon the electrochemical deposition of composite coatings containing ultrafine-dispersed diamonds produced by detonation synthesis are generalized. The main advantages of such coatings over the well-known composite electrochemical coatings are revealed.     

The mechanism of ionic conductivity in stabilized cubic zirconia

The electron-density functional method (in the gradient approximation) and the pseudopotential method are used to study the mechanism of ionic conductivity in the cubic phase of zirconia stabilized with magnesium or yttrium. The oxygen-ion migration in the stabilized zirconia is shown to be a two-stage process, which consists in the formation of active oxygen vacancies and in oxygen-ion jumps from one active vacancy to another. The total activation energy of these processes is calculated to be 1.0–1.5 eV, which agrees with experimental data.     

High-efficiency erbium ion luminescence in silicon nanocrystal systems

The photoluminescence spectra and kinetics of both erbium-doped and undoped multilayer structures of quasi-ordered silicon nanocrystals in a silicon dioxide matrix were studied. It was shown that the optical excitation energy of silicon nanocrystals 2–3 nm in size can be practically completely transferred to Er³⁺ ions in the oxide surrounding the nanocrystals, with its subsequent radiation at 1.5 μm. Possible reasons for the high excitation efficiency of the Er³⁺ ions are discussed, and the conclusion is drawn that the F?rster mechanism is dominant in the energy transfer processes occurring in these structures. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 105–109. Original Russian Text Copyright ? 2004 by Kashkarov, Kamenev, Lisachenko, Shalygina, Timoshenko, Schmidt, Heitmann, Zacharias.