Calcium and oxygen doping in Y Ba2Cu3Oy

Both oxygen and calcium play important roles in inducing superconductivity in Y Ba₂Cu₃O_y (YBCO), which is an antiferromagnetic insulator at low O and Ca content. O induces superconductivity in Ca-free YBCO, while Ca does similarly in oxygen-deficient YBCO. For doping oxygen HgO was used as it decomposes at 476 ^°C into Hg, which escapes from the matrix leaving the crystal unaltered, and O, which provide a way to dope O in YBCO. Considering these facts, polycrystalline samples of Y _1−xCa_xBa₂Cu₃O_y with x=0, 0.1 and 0.2 with and without HgO addition were prepared through a solid-state reaction method. The samples were sintered at 950 ^°C in open atmosphere. These synthesized samples were characterized through using the X-ray diffraction technique (XRD) for phase evaluation, scanning electron microscopy (SEM) for grain morphology, energy dispersive X-ray analysis (EDX) for compositional analysis and the four-contact measurement technique for determining the superconducting transition temperature.     

Variable electron-phonon coupling in isolated metallic carbon nanotubes observed by Raman scattering

We report the existence of broad and weakly asymmetric features in the high-energy (G) Raman modes of freely suspended metallic carbon nanotubes of defined chiral index. A significant variation in peak width (from 12 cm(-1) to 110 cm(-1)) is observed as a function of the nanotube's chiral structure. When the nanotubes are electrostatically gated, the peak widths decrease. The broadness of the Raman features is understood as the consequence of coupling of the phonon to electron-hole pairs, the strength of which varies with the nanotube chiral index and the position of the Fermi energy.     

Burstein–Moss shift and room temperature near-band-edge luminescence in lithium-doped zinc oxide

Nanopowders of pure and lithium-doped semiconducting ZnO (Zn_1−x Li _x O, where x= 0, 0.01, 0.03, 0.06, 0.09 and 0.15 in atomic percent (at.%)) are prepared by PEG-assisted low-temperature hydrothermal method. The average crystallite size is calculated using Debye–Scherrer formula and corrected for strain-induced broadening by Williamson–Hall (W–H) plot. The peak shift in XRD and the lattice constant of ZnO as a function of unit cell composition are predicted by Vegard’s law. The evolution of ZnO nanostructures from rod-shaped to particle nature is observed from TEM images and the influence of dopant on the morphology is investigated. The optical absorption measurement marks an indication that the incorporation of lithium ion into the lattice of ZnO widens the optical band gap energy from ∼2.60 to ∼3.20 eV. The near band edge (NBE) emission peak centered at ∼3.10 eV is considered to be the dominant emission peak in the PL spectra. Blue emission peak is not observed in doped ZnO, thus promoting defect-free nanoparticles. The Burstein–Moss shift serves as a qualitative tool to analyze the widening of the optical band gap and to study the shape of the NBE luminescence in doped ZnO nanopowders. FT-IR spectra are used to identify the strong metal–oxide (Zn–O) interaction.     

Transient behaviour of the mechanoluminescence induced by impulsive deformation of fluorescent and phosphorescent crystals

When a crystal is fractured impulsively by the impact of a moving piston, then initially the mechanoluminescence (ML) intensity increases quadratically with time, attains a peak value and later on it decreases with time. Considering that the solid state ML and gas discharge ML are excited due to the charging and subsequent production of electric field near the tip of moving cracks, expressions are derived for the transient ML intensity I, time t_m and intensity I_m corresponding to the peak of ML intensity versus time curve, respectively, the total ML intensity I_T, and for fast and slow decays of the ML intensity. It is shown that the decay time for the fast decrease of the ML intensity after t_m, is related to the decay time of the strain rate of crystals, and the decay time of slow decay of ML, only observed in phosphorescent crystals, is equal to the decay time of phosphorescence. The value of t_m decreases with the increasing impact velocity, I_m increases with the increasing impact velocity, and I_T initially increases and then it tends to attain a saturation value for higher values of the impact velocity. The values of t_m, I_m and I_T increase linearly with the thickness, area of cross-section and volume of the crystals, respectively. So far as the rise, attainment of ML peak, and fast decay of ML are concerned, there is no any significant difference in the time-evolution of solid state ML, gas discharge ML, and the ML emission consisting of both the solid state ML and gas discharge ML. From the time-dependence of ML, the values of the time-constant for decrease of the surface area created by the movement of a single crack, the time-constant for the decrease of strain rate of crystals, and the decay time of phosphorescence of crystals can be determined. A good agreement is found between the theoretical and experimental results. The importance of fracto ML induced by impulsive deformation of crystals is discussed.     

Hydrogenation of Pd-capped Mg thin films prepared by DC magnetron sputtering

Structural and optical properties of pure Mg thin film coated with Pd have been investigated. Pd-capped Mg thin films had been prepared by DC magnetron sputtering. This work presents an ex situ study on hydrogenation and dehydrogenation kinetics of Pd/Mg films at different conditions using XRD, AFM and optical spectrophotometer. We have succeeded to load thin films of Mg to MgH₂ at normal temperature and normal pressure of hydrogen gas. In hydrogenation, α-MgH₂ phase of magnesium hydride was observed in hydrogenated films at 200 °C and γ-MgH₂ at 250 °C respectively. The desorption kinetics in vacuum also revealed the phase transformation α-MgH₂ to γ-MgH₂. A reflectance change was observed in hydrogenated films in comparison of as deposited thin film. Hydrogenated (H loaded) samples were observed partially transparent in comparison of as deposited.     

Optical and hydrophobic properties of co-sputtered chromium and titanium oxynitride films

The chromium and titanium oxynitride films on glass substrate were deposited by using reactive RF magnetron sputtering in the present work. The structural and optical properties of the chromium and titanium oxynitride films as a function of power variations are investigated. The chromium oxynitride films are crystalline even at low power of Cr target (≥60 W) but the titanium oxynitride films are amorphous at low target power of Ti target (≤90 W) as observed from glancing incidence X-ray diffraction (GIXRD) patterns. The residual stress and strain of the chromium oxynitride films are calculated by sin² ψ method, as the average crystallite size decreases with the increase in sputtering power of the Cr target, higher stress and strain values are observed. The chromium oxynitride films changes from hydrophilic to hydrophobic with the increase of contact angle value from 86.4° to 94.1°, but the deposited titanium oxynitride films are hydrophilic as observed from contact angle measurements. The changes in surface energy were calculated using contact angle measurements to substantiate the hydrophobic properties of the films. UV-vis and NIR spectrophotometer were used to obtain the transmission and absorption spectra, and the later was used for determining band gap values of the films, respectively. The refractive index of chromium and titanium oxynitride films increases with film packing density due to formation of crystalline chromium and titanium oxynitride films with the gradual rise in deposition rate as a result of increase in target powers.     

Relation Between CPT Violation in Neutrino Masses and Mixings

The neutrino parameters determined from the solar neutrino data and the anti-neutrino parameters determined from KamLAND reactor experiment are in good agreement with each other. However, the best fit points of the two sets differ from each other by about 10⁻⁵ eV² in mass-square difference and by about 2° in the mixing angle. Future solar neutrino and reactor anti-neutrino experiments are likely to reduce the uncertainties in these measurements. This, in turn, can lead to a signal for CPT violation in terms a non-zero difference between neutrino and anti-neutrino parameters. In this paper, we propose a CPT violating mass matrix which can give rise to the above differences in both mass-squared difference and mixing angle and study the constraints imposed by the data on the parameters of the mass matrix.     

Effect of implantation temperature on the blistering behavior of hydrogen implanted GaN

GaN epitaxial layers were implanted by 100 keV H⁺ ions at different implantation temperatures (LN₂, RT and 300 °C) with a fluence of 2.5×10¹⁷ cm^?2. The implanted samples were characterized using Nomarski optical microscopy, AFM, XRD, and TEM. Topographical investigations of the implanted surface revealed the formation of surface blistering in the as-implanted samples at 300 °C and after annealing at higher temperature for the implantation at LN₂ and RT. The physical dimensions of the surface blisters/craters were dependent on the implantation temperature. XRD showed the dependence of damage-induced stress on the implantation temperature with higher stress for the implantation at 300 °C. TEM investigations revealed the formation of a damage band in all the cases. The damage band was filled with large area microcracks for the implantation at 300 °C, which were responsible for the as-implanted surface blistering.     

All- optical phase encoded 4-to-1 phase multiplexer using four wave mixing in semiconductor optical amplifier

Optics has already showed its potency over its electronic complements in case of superfast computing and communication systems. Semiconductor optical amplifier, (SOA) with its several nonlinear properties, plays a very crucial role in the development of high-speed all-optical processor. Multiplexer and demultiplexer are the extremely important element of the processor which takes part in utilizing different actions like encoding, decoding, routing, and the different process of data conversion and generation, etc. In this paper, the authors have proposed a scheme of phase encoded all-optical phase multiplexer using four wave mixing (FWM) property of semiconductor optical amplifier. Thus, the improved tolerance against fiber-nonlinearity and higher receiver sensitivity of phase encoding method with the fast occurring processes like FWM in SOA offers higher speed in this proposed scheme of multiplexing.