Experimental and numerical study on instability structure of the supersonic mixing layer (Mc = 0.5)

The parameters of instability wave of supersonic mixing layer(Mc=0.5,M1=3.5/M2=1.4) are measured by flow visualization and calculated by means of two-dimensional direct numerical simulaitons of the compressible Navier-Stokes equations.In both cases of the mixing layer with harmonic disturbance or not,the comparative results indicate that the wavelength of the two-dimensional wave is equal to the vortex spacing in the streamwise direction because the difference between them is less than 1%.However,the measur...     

钐原子的两步激发共振光电离光谱

采用两步激发共振光电离技术研究了Sm原子的偶宇称高激发态光谱.实验采用了两条激发路线：1)第一束激光的波长固定在478.44nm以便将Sm原子从4f⁶6s²［⁷F₁］态激发至4f⁶6s6p［⁷D₁］态,再用第二束激光使其波长从480nm扫描至530nm,将Sm原子进一步激发至待测的高激发态;2)第一束激光的波长固定在574.8 关键词： Sm原子 光谱 分步激发 共振电离     

强流脉冲电子束辐照诱发多晶纯铝中的空位缺陷簇结构

利用强流脉冲电子束（HCPEB）技术对多晶纯铝样品进行辐照,采用透射电子显微镜详细分析了辐照诱发的空位簇缺陷.HCPEP辐照后,在辐照表层内形成了大量的四方形空位胞,其间包含位错圈和堆垛层错四面体（SFT）等类型的空位簇缺陷.1次辐照后,空位胞内产生空位型位错圈,5次辐照则主要产生SFT;10次辐照后,空位胞内产生的空位簇缺陷主要是位错圈,局部区域也观察到了SFT缺陷,在产生SFT的附近区域具有很低的位错密度或者几乎无位错出现.HCPEB辐照产生的瞬间加热和冷却诱发了幅值极大且应变速率极高的应力,这一因素 关键词： 强流脉冲电子束 多晶纯铝 空位簇缺陷 堆垛层错四面体     

Existence of extremal metrics on almost homogeneous manifolds of cohomogeneity one —IV

This paper is the first of a series of papers in which we generalize our results in (Asian J. of Math. 4, 817–830 (2000); J. Geom. Anal. 12, 63–79 (2002); Intern. J. Math. 14, 259–287 (2003)) to the general complex compact almost homogeneous manifolds of real cohomogeneity one. In this paper we deal with the exceptional case of the G ₂ action (Cf. Intern. J. Math. 14, 259–287 (2003), p. 285). In particular, we prove the existence of Kähler-Einstein metric on this manifold.     

Characterization of gadolinium oxide film by pulse laser deposition

In this work, Gd-oxide dielectric films were deposited on Si by pulse laser deposition method (PLD), moreover, the micro-structures and electrical properties were reported. High-resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) indicated that Gd-oxide was polycrystalline Gd₂O₃ structure, and no Gd metal phase was detected. In addition, both interface at Si and Ni fully silicide (FUSI) gate were smooth without the formation of Si-oxide. X-ray photoelectron spectroscopy (XPS) confirmed the formation of Gd₂O₃ and gave an atom ratio of 1:1 for Gd:O, indicating O vacancies existed in Gd₂O₃ polycrystal matrix even at O₂ partial pressure of 20 mTorr. Electrical measurements indicated that the dielectric constant of Gd-oxide film was 6 and the leakage current was 0.1 A/cm² at gate bias of 1 V.     

基于热传导原理电枢平均磨损率计算

在假设导轨为半无限长固体导体及电枢表面磨损主要是熔化磨损条件下,基于固体接触面导热原理,推导出电枢和导轨温度分布方程,提出了电枢平均磨损率计算方法。利用此方法分析了驱动电流、电枢和导轨材料匹配和接触面积参数对电枢平均磨损率影响。将平均磨损率计算结果与Stefani和Parker的实验结果进行对比,二者吻合较好,从而为建立电磁轨道炮磨损率与转捩之间的关系提供理论支持。     

应用布儒斯特定律测定玻璃的折射率

介绍应用布儒斯特定律测定玻璃折射率的原理、方法和步骤。     

The inverse optimal value problem

This paper considers the following inverse optimization problem: given a linear program, a desired optimal objective value, and a set of feasible cost vectors, determine a cost vector such that the corresponding optimal objective value of the linear program is closest to the desired value. The above problem, referred here as the inverse optimal value problem, is significantly different from standard inverse optimization problems that involve determining a cost vector for a linear program such that a pre-specified solution vector is optimal. In this paper, we show that the inverse optimal value problem is NP-hard in general. We identify conditions under which the problem reduces to a concave maximization or a concave minimization problem. We provide sufficient conditions under which the associated concave minimization problem and, correspondingly, the inverse optimal value problem is polynomially solvable. For the case when the set of feasible cost vectors is polyhedral, we describe an algorithm for the inverse optimal value problem based on solving linear and bilinear programming problems. Some preliminary computational experience is reported.Mathematics Subject Classification (1999):49N45, 90C05, 90C25, 90C26, 90C31, 90C60Acknowledgement This research has been supported in part by the National Science Foundation under CAREER Award DMII-0133943. The authors thank two anonymous reviewers for valuable comments.     

Er3+-Yb3+共掺磷酸盐玻璃(LGS-L)波导放大器设计

就作者自行研制的Er3 + Yb3 + 共掺磷酸盐玻璃 (LGS L) ,用重叠积分方法进行放大器设计。在Er3 + 、Yb3 + 掺杂浓度分别为 1.5 1× 10 2 6ions/m3 、19.1× 10 2 6ions/m3 的情况下可获得 2 .6dB/cm的增益 ;Er3 + 掺杂浓度为2× 10 2 6ions/m3 时 ,在 4cm的器件上可获得超过 15dB的增益。此外 ,讨论了信号光和抽运光光场强度的横向分布与Er3 + 、Yb3 + 横向掺杂浓度分布之间的重叠对放大器增益的影响 ,放大器的最佳长度 ,以及在 980nm抽运下 ,Yb3 + 、Er3 + 掺杂浓度比对放大器增益的影响。     

电场调制下Zn0.85Cd0.15Se-Znse应变层超晶格的受激发射

近几年,随着I-Ⅵ矶族宽禁带半导体二极管激光器取得突破性进展[1],对ZnSe基量子阱和超晶格结构的受激发射已进行了广泛的研究[2~3].但是迄今为止,人们尚未观测到电场调制下的受激发射增强现象.本文报道我们在Zn0.85Cd0.15Se-Znse应变层超晶格中观测到的电场调制的受激发射.