Variations in the electrical resistivity of La0.67Ca0.33MnO3 films and induced interconversions of ferromagnetic and nonferromagnetic inclusions in their bulk

A significant (∼1.8%) positive unit between the parameters of the crystal lattice is the reason of tetragonal distortion (a _⊥/a _‖ ≈ 1.04) and reduction in the volume of the unit cell of La_0.67Ca_0.33MnO₃ films (15 nm) quasicoherently grown on the (001) surface of a LaAlO₃ substrate. The films consist of single-crystal blocks with the lateral size of 30–50 nm. The atomically smooth LaAlO₃-La_0.67Ca_0.33MnO₃ interphase boundary has no misfit dislocations. At T = 4.2 K, the transformation of nonferromagnetic phase inclusions into ferromagnetic ones in a constant magnetic field H is accompanied by a stable reduction in the electrical resistivity ρ of manganite films with time, so that the curve ρ(t) is well approximated by the relationship ρ(t) ∼ ρ₁(t − t ₀)^1/2, (where t ₀ is the time for establishment of the specified value (μ₀ H = 5 T) of the magnetic field and ρ₁ is a coefficient independent of H). The magnetocrystalline anisotropy due to the elastic deformation of films by the substrate and stratification of electronic phases are the reasons of the distinct hysteresis in the dependences ρ(μ₀ H, T < 100 K) obtained on μ₀ H scanning in the sequence 5 T → 0 → −5 T → 0 → 5 T. At T = 50 K and μ₀ H = 0.4 T, the magnetoresistance MR = 100% [ρ(μ₀ H) − ρ(μ₀ H = 0)]/ρ(μ₀ H = 0) of LCMO films attains 150%.     

Transformations of the Spectrum of an Optical Phonon Excited in Raman Scattering in the Bulk of Diamond by Ultrashort Laser Pulses with a Variable Duration

JETP Letters - A spontaneous Raman signal at the frequency of the triply degenerate optical phonon of diamond is observed in the photoluminescence spectrum under the pre-filamentation excitation of...     

Observation of a resonancelike structure in the pi +- psi' mass distribution in exclusive B-->Kpi +- psi' decays

A distinct peak is observed in the pi +/- psi' invariant mass distribution near 4.43 GeV in B-->K pi +/- psi' decays. A fit using a Breit-Wigner resonance shape yields a peak mass and width of M=4433+/-4(stat)+/-2(syst) MeV and Gamma=45-13+18(stat)-13+30(syst) MeV. The product branching fraction is determined to be B(B 0-->K -/+Z+/-(4430)) x B(Z+/-(4430)-->pi+/-psi')=(4.1+/-1.0(stat)+/-1.4(syst)) x 10(-5), where Z+/-(4430) is used to denote the observed structure. The statistical significance of the observed peak is 6.5 sigma. These results are obtained from a 605 fb(-1) data sample that contains 657 x 10(6) BB pairs collected near the Upsilon(4S) resonance with the Belle detector at the KEKB asymmetric energy e+ e- collider.     

Formation of MnAs and MnP layers by reactive laser sputtering

We show that the technique of pulsed laser sputtering of metallic manganese in a flow of hydrides (arsine or phosphine) allows the deposition of half-metallic MnB ⁵ compound layers on GaAs (100) substrates. The crystal structure, magneto-optical, and galvanomagnetic properties of the layers are determined by synthesis conditions, mainly by substrate temperature. It is established that the MnAs and MnP layers are ferromagnetic at temperatures up to 300 K.     

Influence of delta〈Mn〉 doping parameters of the GaAs barrier on circularly polarized luminescence of GaAs/InGaAs heterostructures

The circular polarization of low-temperature electroluminescence of diodes based on heterostructures with an undoped quantum well InGaAs/GaAs and a delta〈Mn〉 layer in the GaAs barrier has been investigated. The possibility of changing the degree of circular polarization of the electroluminescence by varying the main structural parameters of diodes (spacer layer thickness, i.e., the distance between the delta〈Mn〉 layer and the quantum well, atomic concentration in the delta〈Mn〉 layer, and introduction of an additional acceptor delta layer) has been analyzed. It has been revealed that the variation in the spacer layer thickness is the most effective method for controlling the degree of circular polarization of the electroluminescence.     

Effect of compressive and tensile stresses in GaMnAs layers on their magnetic properties

The effect of elastic stresses (compressive, tensile) on the magnetic properties of epitaxial GaMnAs layers prepared by laser deposition of solid-state targets in a gas atmosphere on different buffer sublayers (In _x Ga_{1 − x} As and In _x Ga_{1 − x} P) and substrates (GaAs, InP) has been investigated. It has been established from the investigations of magnetic-field dependences of the Hall resistance that all layers exhibit ferromagnetic properties with the Curie temperature ∼50 K. It has been shown that, in the case of tensile stresses in GaMnAs layers (In _x Ga_{1 − x} As and In _x Ga_{1 − x} P buffers and InP substrate), the anomalous Hall effect shape demonstrates a predominant orientation of the easy-magnetization axis in the growth direction, unlike the GaMnAs layers prepared on a GaAs substrate (with compressive stresses), which demonstrate the predominance of the component of the magnetization vector in the layer plane.     

Polarization-selective Excitation of Dye Luminescence on a Gold Film by Structured Ultrashort Laser Pulses

Donut-shaped visible (515 nm) femtosecond laser pulses with linear, radial and azimuthal polarizations after tight focusing (numerical aperture NA = 0.65) have been used for spectrally adjusted excitation of plasmonenhanced rhodamine 6G dye luminescence on the surface of a nanocrystalline 45-nm thick gold film with its plasmon resonance near the laser line. Significant luminescence output increments—1.7-fold for radial polarization compared to the azimuthal one, and almost 3-fold—compared to the linear one, have been observed. This effect is related to significant transformation of the transverse electrical field component into longitudinal one for radial polarization (up to 33% in intensity, according to our calculations), and corresponding increase in excitation efficiency of plasmons in the smaller nanocrystallites throughout the film.     

Minimization of the Total Depth of Internal Saw-Tooth Reliefs of a Two-Layer Relief-Phase Diffraction Microstructure

Results of studying the possibility to decrease the total depth of reliefs of a two-layer microstructure having two internal saw-tooth microreliefs reducing the dependence of the diffraction efficiency of the microstructure on the radiation wavelength and angle of radiation incidence on the microstructure are presented. These results allow one to minimize the complexity of obtaining optimum microrelief depths depending on requirements applicable to the diffraction optical element in the framework of the electromagnetic-diffraction theory. Optimum depths provide in the specified spectral range and interval of angles of radiation incidence the maximum possible (for the chosen width of the narrowest zone of the saw-tooth microrelief) value of the diffraction efficiency at the point of its minimum.     

Harmonic Kinoform Lens: Diffraction Efficiency and Chromatism

Sawtooth microstructures with a relief depth significantly exceeding the central wavelength of the working spectral range are studied within the scalar and strict diffraction theories. The possibility of maintaining high diffraction efficiency, irrespective of the working spectral bandwidth and at allowed angles of incidence, which can reach 45° or more, is shown. It is also shown that the chromatism of such lenses is controlled in a very wide range and can be less than that of the lightest crown glasses.     

Phase Separation in GaMnAs Layers Grown by Laser Pulsed Deposition

GaMnAs layers grown by pulsed laser deposition were studied by magneto-optical transversal Kerr effect spectroscopy, spectral ellipsometry, resistivity and the Hall effect measurements, and magnetometry. The growth regimes for magnetically inhomogeneous layers containing Mn-enriched ferromagnetic regions with different composition and sizes were established. The layers grown at a temperature of 300°C exhibit a ferromagnetic behavior at temperatures below 80 K, which is conditioned by the presence of local ferromagnetic (Ga,Mn)As regions in the paramagnetic matrix. The nature of peculiarities in the TKE spectrum of these layers is discussed.