Liquid-crystal composites with controlled photoluminescence of CdSe/ZnS semiconductor quantum rods

Liquid-crystal (LC) composites based on a combination of different acrylates and pentylcyanobiphenyl and containing CdSe/ZnS semiconductor quantum nanorods have been investigated. Samples of electro-optical cells with planar or homeotropic structures (depending on the acrylate type) have been obtained. The morphology of LC composite formation has been studied using luminescence techniques. It is shown that these composites are gel-like LC media, where the formation of dispersed and network structures in the cells plays a stabilizing role. The role of the electron transfer reactions during polymerization and the features of the kinetics of the Freedericksz effect (reorientation in an electric field) are discussed.     

New nanoheterostructures based on astralenes: Spectral characteristics and some application aspects

Original compositions in the form of suspensions of astralenes with luminescing solubilizers in various solvents, including liquid crystals (LCs), are developed. Using an LC composition as an example, the possibility of extending the dynamic range of optical limiting due to the joint action of two-photon absorption in the LC matrix and stimulated scattering by carbon nanoparticles is demonstrated. The spectral and luminescent characteristics of such suspensions are determined. The role played by the photochemical factor in the photodynamics of optical limiting in carbon heteronanostructures is discussed.     

Tungsten-containing catalysts for oxidative dehydrogenation of hydrocarbons

Methods for introducing tungsten into the precursors of oxide catalysts for oxidative dehydrogenation (OD) were developed. Tungsten-containing samples of oxide catalysts of various compositions were synthesized and their catalytic properties in OD of ethane were studied. The introduction of tungsten into the catalysts increased the yield of ethylene in all cases. In the series of tungsten-containing catalysts, the ethylene yield increased in the following order of the catalysis: Mg-Al-V-Mo-W-O < Mg-Al-Ni-V-Mo-W-O < Mg-Al-Fe-V-Mo-W < Mg-Al-Cr-V-Mo-W-O.     

Distinctive features of plastic strain localization under severe plastic deformation of metals

Mechanical testing is performed and the structure of zirconium and aluminum predeformed by ∼450% using multiaxial forging (MAF) and equal channel angular pressing (ECAP) is investigated. Tensile loading tests of the severely deformed specimens exhibited their tendency to necking, with the ductility of the material in the neck, however, being superior to that in the neck of initial coarse-grained specimens. The results of the experiments imply that a fundamental stage of plastic flow of solids under severe plastic deformation (SPD) is the formation of cellular-banded structure and strain localization in the fine-grain bands. This considerably retards further deformation-induced refinement of the structure by SPD, and also results in the rapid formation of a fracture neck in the materials with this structure. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 43–49, November, 2007.     

Discrete strip-concave functions, Gelfand-Tsetlin patterns, and related polyhedra

Discrete strip-concave functions considered in this paper are, in fact, equivalent to an extension of Gelfand-Tsetlin patterns to the case when the pattern has a not necessarily triangular but convex configuration. They arise by releasing one of the three types of rhombus inequalities for discrete concave functions (or “hives”) on a “convex part” of a triangular grid. The paper is devoted to a combinatorial study of certain polyhedra related to such functions or patterns, and results on faces, integer points and volumes of these polyhedra are presented. Also some relationships and applications are discussed.In particular, we characterize, in terms of valid inequalities, the polyhedral cone formed by the boundary values of discrete strip-concave functions on a grid having trapezoidal configuration. As a consequence of this result, necessary and sufficient conditions on a pair of vectors to be the shape and content of a semi-standard skew Young tableau are obtained.     

Light-emitting properties of GaAs/InGaAs quantum wells with a GaAs barrier δ-doped with Mn atoms

The structural, electric, and luminescence properties of quantum-confined InGaAs/GaAs heterostructures, modified by δ-Mn doping of the GaAs barrier, have been investigated. The structures were prepared by combination of metal-organic chemical vapor deposition and laser sputtering of solid targets. The structures had a high crystal quality and pronounced electroluminescence intensity. The Mn content in the δ-doped layer, providing enhanced electroluminescence intensity and reduced operating currents of light-emitting diodes, was experimentally determined.     

Phase Separation in (Ga,Mn)As Layers Obtained by Ion Implantation and Subsequent Laser Annealing

Physics of the Solid State - In this paper, we present the results of studies of the spectral, temperature, and field dependences of the transversal Kerr effect in...     

Terahertz Photoconductivity in Hg<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te near the transition from the direct to inverted spectrum

For the Hg_1?x Cd _x Te-based structures, it is shown that the transition from the direct to invertеd spectrum is accompanied by the sign change for the signals related to the terahertz photoconductivity and to the magnetophotogalvanic effect. Within the range of chemical compositions corresponding to the inverted spectrum, the photoconductivity kinetics exhibits specific features, which can result from the surface topological states.     

Formation of MnAs and MnP layers by reactive laser sputtering

We show that the technique of pulsed laser sputtering of metallic manganese in a flow of hydrides (arsine or phosphine) allows the deposition of half-metallic MnB ⁵ compound layers on GaAs (100) substrates. The crystal structure, magneto-optical, and galvanomagnetic properties of the layers are determined by synthesis conditions, mainly by substrate temperature. It is established that the MnAs and MnP layers are ferromagnetic at temperatures up to 300 K.