Measurement of Einstein-Podolsky-Rosen-type flavor entanglement in Upsilon(4S) --> B0 B0 decays

The neutral B meson pair produced at the Upsilon(4S) should exhibit a nonlocal correlation of the type discussed by Einstein, Podolsky, and Rosen. We measure this correlation using the time-dependent flavor asymmetry of semileptonic B(0) decays, which we compare with predictions from quantum mechanics and two local realistic models. The data are consistent with quantum mechanics, and inconsistent with the other models. Assuming that some B pairs disentangle to produce B(0) and B(0) with definite flavor, we find a decoherent fraction of 0.029 +/ -0.057, consistent with no decoherence.     

Observation of a charmoniumlike state produced in association with a J/psi in e+e- annihilation at sqrt[s] approximately equal to 10.6 GeV

We report the first observation of a charmoniumlike state recoiling from the J/psi in the inclusive process e+e- -->J/psi+anything at a mass of (3.943+/-0.006+/-0.006) GeV/c{2}. We also observe the decay of this state into D*D[over ] and determine its intrinsic width to be less than 52 MeV/c{2} at the 90% C.L. These results are obtained from a 357 fb{-1} data sample collected with the Belle detector near the Upsilon(4S) resonance, at the KEKB asymmetric-energy e+e- collider.     

Measurement of inclusive Ds, D0, and J/psi rates and determination of the Bs(*)Bs(*) production fraction in bb Events at the Upsilon(5S) resonance

The inclusive production of D(s), D(0), and J/psi mesons is studied using a 1.86 fb(-1) data sample collected on the Upsilon(5S) resonance with the Belle detector at the KEKB asymmetric-energy e(+)e(-) collider. The number of bb events in this Upsilon(5S) data sample is determined. We measure the branching fractions B(Upsilon(5S)-->D(s)X)/2=(23.6+/-1.2+/-3.6)%, B(Upsilon(5S)-->D(0)X)/2=(53.8+/-2.0+/-3.4)%, and B(Upsilon(5S)-->J/psiX)/2=(1.030+/-0.080+/-0.067)%. From the D(s) and D(0) inclusive branching fractions the ratio f(s)=(18.0+/-1.3+/-3.2)% of B(s)(*)B(s)(*) to the total bb quark pair production at the Upsilon(5S) energy is obtained in a model-dependent way.     

Observation of time-dependent CP violation in B0 --> eta'K0 decays and improved measurements of CP asymmetries in B0 --> phiK0, KS0KS0KS0 and B0 --> J/psiK0 decays

We present improved measurements of CP-violation parameters in B(0) --> phiK(0), eta(')K(0), KS(0)KS(0)KS(0) decays based on a sample of 535 x 10(6) BB pairs collected at the Upsilon(4S) resonance with the Belle detector at the KEKB energy-asymmetric e(+)e(-) collider. We obtain sin2phi1(eff)=+0.64+/-0.10(stat)+/-0.04(syst) for B(0) --> eta(')K(0), +0.50+/-0.21(stat)+/-0.06(syst) for B(0) --> phiK(0), and +0.30+/-0.32(stat)+/-0.08(syst) for B(0) --> KS(0)KS(0)KS(0) decays. We have observed CP violation in the B(0) --> eta(')K(0) decay with a significance of 5.6 standard deviations. We also perform an improved measurement of CP asymmetries in B(0) --> J/psiK(0) decays and obtain sin2phi1=+0.642+/-0.031(stat)+/-0.017(syst).     

Properties of InGaAs/GaAs quantum wells with a δ〈Mn〉-doped layer in GaAs

A method of formation of two-dimensional structures containing a δ〈Mn〉-doped layer in GaAs and an In_xGa_1?x As quantum well (QW) separated by a GaAs spacer of thickness d = 4–6 nm is developed using laser evaporation of a metallic target during MOS hydride epitaxy. It is shown that, up to room temperature, these structures have ferromagnetic properties most likely caused by MnAs clusters. At low temperatures (T _m ～ 30 K), the anomalous Hall effect is revealed to occur. This effect is related to hole scattering by Mn ions in GaAs and to the magnetic exchange between these ions and QW holes, which determines the spin polarization of the holes. The behavior of the negative magnetoresistance of these structures at low temperatures indicates the key role of quantum interference effects.     

New diluted ferromagnets based on diamond-like semiconductors GaSb,InSb, InAs,Ge, and Si,supersaturated with manganese or iron impurities during laser epitaxy

The electric, magnetic, and magneto-optical properties of thin (50–100 nm) GaSb:Mn, InSb:Mn, InAs:Mn, Ge:Mn, Ge:Fe, Si:Mn, and Si:Fe layers with a Curie point up to 500 K, obtained by laser plasma deposition in vacuum in the case of strong supersaturation of a solid solution with a 3d impurity, have been experimentally investigated.     

Low-temperature transport and ferromagnetism in GaAs-based structures with Mn

GaAs structures with implanted Mn and, additionally, with Mg for increasing the hole concentration in the implanted Mn layer are synthesized and investigated. SQUID magnetometer measurements revealed the existence of ferromagnetism in the temperature range 4.2 K ≤ T < 400 K, which is associated with the formation of the Ga_1?x Mn _x As solid solution and MnAs and Ga_1?y Mn _y clusters in the sample as a result of rapid high-temperature annealing. At temperatures from 4.2 to approximately 200 K, the anomalous Hall effect associated with additional magnetization of the sample is observed. As the temperature increases from 4.2 K, the colossal negative magnetoresistance is transformed into a positive magnetoresistance at T ≈ 35 K.     

Transport and ferromagnetism in InGaAs quantum well structures delta-doped with Mn

Samples containing InGaAs quantum wells with p-type conductivity delta-doped by Mn were synthesized and studied. Magnetic moment measurements on a SQUID magnetometer revealed the presence of ferromagnetism at temperatures T from 4.2 to 400 K. Anomalous Hall effect caused by additional sample magnetization was observed at temperatures of from about 30 to 80 K. The Shubnikov-de Haas effect was recorded at 4.2 K. Negative magnetoresistance changed sign for positive at T ≈ 30 K as the temperature increased.     

Temperature dependence of the lasing efficiency of the three-micrometer YAG:Er laser

Experimental results and calculated data on the study of the temperature dependence of the lasing efficiency of the pulsed three-micrometer YAG:Er³⁺ laser in the range T = ?80 ? +80°C are presented. It was shown that a decrease in the laser crystal temperature from room temperature to T = ?80°C leads to an increase in the laser output energy by a factor of 3?4 at the same energy of lamp pumping. Accordingly, the differential lasing efficiency increases (about three times).     

Silver as a capturing material for iodine released from lead–bismuth eutectic in various conditions

Journal of Radioanalytical and Nuclear Chemistry - The usage of silver as a filtering material for removal of iodine from the gas phase of a lead–bismuth eutectic based nuclear reactor was...