The universe as a stochastic process

A stochastic radiation-filled world model is constructed in which the equation of state is perturbed with a “white noise”. The corresponding Fokker-Planck equation is solved. It turns out that the maximum probability path of the world's evolution is that of the Friedman model. However, singularities are no obstacles for the stochastic evolution, and σ² → ∞ as t → ∞.     

Low-level otoacoustic emissions may predict susceptibility to noise-induced hearing loss

In a longitudinal study with 338 volunteers, audiometric thresholds and otoacoustic emissions were measured before and after 6 months of noise exposure on an aircraft carrier. While the average amplitudes of the otoacoustic emissions decreased significantly, the average audiometric thresholds did not change. Furthermore, there were no significant correlations between changes in audiometric thresholds and changes in otoacoustic emissions. Changes in transient-evoked otoacoustic emissions and distortion-product otoacoustic emissions were moderately correlated. Eighteen ears acquired permanent audiometric threshold shifts. Only one-third of those ears showed significant otoacoustic emission shifts that mirrored their permanent threshold shifts. A Bayesian analysis indicated that permanent threshold shift status following a deployment was predicted by baseline low-level or absent otoacoustic emissions. The best predictor was transient-evoked otoacoustic emission amplitude in the 4-kHz half-octave frequency band, with risk increasing more than sixfold from approximately 3% to 20% as the emission amplitude decreased. It is possible that the otoacoustic emissions indicated noise-induced changes in the inner ear, undetected by audiometric tests. Otoacoustic emissions may therefore be a diagnostic predictor for noise-induced-hearing-loss risk.     

The lattice of congruence lattices of algebras on a finite set

The congruence lattices of all algebras defined on a fixed finite set A ordered by inclusion form a finite atomistic lattice \(\mathcal {E}\). We describe the atoms and coatoms. Each meet-irreducible element of \(\mathcal {E}\) being determined by a single unary mapping on A, we characterize completely those which are determined by a permutation or by an acyclic mapping on the set A. Using these characterisations we deduce several properties of the lattice \(\mathcal {E}\); in particular, we prove that \(\mathcal {E}\) is tolerance-simple whenever \(|A|\ge 4\).     

The lattice of convexities of partial monounary algebras

A class of partial monounary algebras is called a convexity if it is closed under homomorphic images, direct products and convex relative subalgebras. We prove that the collection of all convexities of partial monounary algebras forms a countable set. Further, each convexity can be generated by at most two algebras.     

1,3-diketones from acid chlorides and ketones: a rapid and general one-pot synthesis of pyrazoles

[reaction: see text] 1,3-Diketones were synthesized directly from ketones and acid chlorides and were then converted in situ into pyrazoles by the addition of hydrazine. This method is extremely fast, general, and chemoselective, allowing for the synthesis of previously inaccessible pyrazoles and synthetically demanding pyrazole-containing fused rings.     

Dielectric and anelastic relaxation of crystals containing point defects

A theory is developed which describes the linear, reversible, time-dependent response of a crystal containing point defects to stress or electric fields, respectively known as anelastic and dielectric relaxation. Such relaxation occurs because of the redistribution of the defects among sites which are initially equivalent, but which becomes inequivalent in the presence of the external field. The macroscopic behaviour of such a crystal is found to be describable in terms of the symmetry which can be assigned to the defect. This defect symmetry determines whether or not the crystal will undergo dielectric or anelastic relaxation and, if relaxation can occur, which specific coefficients of elastic compliance or electric susceptibility show the relaxation effect. The latter information, called the ‘selection rules’ tells, in effect, which combination of stress or electric field components is capable of redistributing the defects. Tables are given for these selection rules for all possible defect symmetries in each of the 32 crystal classes. It is also shown that a hitherto unobserved phenomenon of piezoelectric relaxation may occur; the selection rules for this effect are also given.

Aside from its symmetry, the defect can be described as an electric dipole in terms of a suitable dipole moment vector μ, and as an ‘elastic dipole’ in terms of a tensor λ. It is shown that the defect symmetry determines the number of independent components of μ and λ. Finally, a thermodynamic theory is developed which permits calculation of the relaxation strengths for those compliance, susceptibility, and piezoelectric coefficients which undergo relaxation, in terms of the independent components of μ and λ. Applications of the theory to specific cases are then reviewed.     

Testing Lorentz invariance and CPT conservation with NuMI neutrinos in the MINOS near detector

A search for a sidereal modulation in the MINOS near detector neutrino data was performed. If present, this signature could be a consequence of Lorentz and CPT violation as predicted by the effective field theory called the standard-model extension. No evidence for a sidereal signal in the data set was found, implying that there is no significant change in neutrino propagation that depends on the direction of the neutrino beam in a sun-centered inertial frame. Upper limits on the magnitudes of the Lorentz and CPT violating terms in the standard-model extension lie between 10(-4) and 10(-2) of the maximum expected, assuming a suppression of these signatures by a factor of 10(-17).     

High Performance (fT~500GHZ) In0.52Al0.48As/In0.53Ga0.47As/InP Quantum Wire MODFETs Employing Asymmetric Coupled-Well Channels

A coupled-well InAlAs/InGaAs quantum wire MODFET structure is proposed, for which simulations predict improved frequency performance (>500 GHz), over a wider range of V_g, as compared to well/wire devices with a standard MODFET heterointerface. A comparison of several transverse potential well profiles, obtained by varying the placement of a thin barrier within a 100 Å finite well, is presented. In all cases, the quantum wires consist of a 0.1 m long channel and a 150 Å finite-square-well lateral profile. It has been found that the peak of the electron distribution for the first confined state, as measured from the heterointerface, changes dramatically depending on the location of the thin barrier. For quantum wire structures, realized in the lattice matched system of In_0.52Al_0.48As/In_0.53Ga_0.47As/InP, a change in the barrier location of 25 Å is accompanied by a shift in the carrier peak of more than 40 Å (~20 Å closer to or farther from the spacer-well interface than in the standard MODFET profile). Implications of this are reflected in the current-voltage characteristics (I_d-V_d) and frequency responses (f_T-V_g) of the proposed structures.