Application of pressure sensitive paint measurement to a low-solidity cascade diffuser of a transonic centrifugal compressor

A pressure sensitive paint (PSP) measurement has been known as a pressure field measurement technique based on the oxygen quenching phenomenon of luminescence of specific luminophores. A PSP measurement was applied for pressure field measurement in a low-solidity circular cascade diffuser of a single-stage transonic centrifugal compressor with 5 in pressure ratio for HFC134a gas. The oxygen concentration was about 500 ppm. Ru (bath-phen) was adsorbed on a silica-gel thinlayer chromatography sheet, and the sheet was pasted onto the side-wall between the cascade vanes. A drastic change in luminescent intensity was recognized during a surge condition. Also the pressure variations based on luminescent intensity agreed well with the pressure fluctuations measured using a semiconductor pressure sensor with high-frequency-response. It was shown that a PSP measurement worked well to investigate the unsteady pressure fields in a circular cascade diffuser of a transonic centrifugal compressor. Moreover, the time response of PSP becomes clear as a problem to be overcome for the present.     

Bounds on the maximum numbers of clear two-factor interactions for 2^{(n_1 + n_2 ) - (k_1 + k_2 )} fractional factorial split-plot designs

Fractional factorial split-plot (FFSP) designs have an important value of investigation for their special structures. There are two types of factors in an FFSP design: the whole-plot (WP) factors and sub-plot (SP) factors, which can form three types of two-factor interactions: WP2fi, WS2fi and SP2fi. This paper considers FFSP designs with resolution III or IV under the clear effects criterion. It derives the upper and lower bounds on the maximum numbers of clear WP2fis and WS2fis for FFSP designs, and gives some methods for constructing the desired FFSP designs. It further examines the performance of the construction methods.     

高电荷态离子207Pbq+(24≤q≤36)与Si(110)固体表面作用的电子发射研究

报道了利用兰州重离子加速器国家实验室ECR源引出的高电荷态离子207Pbq+(24≤q≤36)入射到Si(110)表面产生的电子发射的实验测量结果.结果表明,高电荷态离子与固体表面相互作用产生的电子发射产额Y与入射离子的电荷态q、入射角度ψ和入射能量E都有很强的关联.首次发现,电子发射产额Y与入射角度ψ间有接近1/tanψ的关系.理论分析认为,这些过程与基于经典过垒模型的势能电子发射过程密切相关.     

Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

An Integrated Selection Formulation for the Best Normal Mean: The Unequal and Unknown Variance Case

This paper considers an integrated formulation in selecting the best normal mean in the case of unequal and unknown variances. The formulation separates the parameter space into two disjoint parts, the preference zone (PZ) and the indifference zone (IZ). In the PZ we insist on selecting the best for a correct selection (CS₁) but in the IZ we define any selected subset to be correct (CS₂) if it contains the best population. We find the least favorable configuration (LFC) and the worst configuration (WC) respectively in PZ and IZ. We derive formulas for P(CS₁|LFC), P(CS₂|WC) and the bounds for the expected sample size E(N). We also give tables for the procedure parameters to implement the proposed procedure. An example is given to illustrate how to apply the procedure and how to use the table.     

Primal cutting plane algorithms revisited

Dual fractional cutting plane algorithms, in which cutting planes are used to iteratively tighten a linear relaxation of an integer program, are well-known and form the basis of the highly successful branch-and-cut method. It is rather less well-known that various primal cutting plane algorithms were developed in the 1960s, for example by Young. In a primal algorithm, the main role of the cutting planes is to enable a feasible solution to the original problem to be improved. Research on these algorithms has been almost non-existent.  In this paper we argue for a re-examination of these primal methods. We describe a new primal algorithm for pure 0-1 problems based on strong valid inequalities and give some encouraging computational results. Possible extensions to the case of general mixed-integer programs are also discussed.     

Two inequalities involving Hadamard products of positive semi-definite Hermitian matrices

We extend two inequalities involving Hadamard products of positive definite Hermitian matrices to positive semi-definite Hermitian matrices. Simultaneously, we also show the sufficient conditions for equalities to hold. Moreover, some other matrix inequalities are also obtained. Our results and methods are different from those which are obtained by S. Liu in [J. Math. Anal. Appl. 243:458–463(2000)] and B.-Y. Wang et al. in [Lin. Alg. Appl. 302–303: 163–172(1999)].     

ON A LINEAR DELAY DIFFERENCE EQUATION WITH IMPULSES

IIntroductlonLet N denote the set of all Integers．FOr any a;b E N,define N(a)＝{a,a＋1,…},N(a,b)二{a,a＋1,…,b}when a＜b．Consider the dlf卜巳renceequationl 凸x。＋P。x。－。＝0;nEN(0)andN4n。;2—“－””’”门二l0 凸X。,＝~X。,,JENO);where A denotes the forward difference operator八。。＝x。＋l一 x。,{P。} Isa sequence ofnon－negative real numbers,{nj}Is a sequence ofnon－negativeIntegers with nj＜nj＋lfor j E N(1)and nj一 co as ;一 co,{4}Is a sequence。I优。且皿mb ers,…     

Generalized Longo–Rehren Subfactors and α-Induction

We study the recent construction of subfactors by Rehren which generalizes the Longo–Rehren subfactors. We prove that if we apply this construction to a non-degenerately braided subfactor N⊂M and α^±-induction, then the resulting subfactor is dual to the Longo–Rehren subfactor M⊗M ^opp⊂R arising from the entire system of irreducible endomorphisms of M resulting from α^plusmn;-induction. As a corollary, we solve a problem on existence of braiding raised by Rehren negatively. Furthermore, we generalize our previous study with Longo and Müger on multi-interval subfactors arising from a completely rational conformal net of factors on S ¹ to a net of subfactors and show that the (generalized) Longo–Rehren subfactors and α-induction naturally appear in this context. Received: 11 September 2001 / Accepted: 7 October 2001