Three-dimensional visualization of columnar vortices in rotating Rayleigh–Bénard convection

Journal of Visualization -  To enrich the three-dimensional experimental details of vortex structures in rotating Rayleigh–Bénard convection, we established a technique...     

Electromagnetically induced transparency with squeezed vacuum

The squeezed vacuum resonant on the (87)Rb D1 line (probe light) was injected into an optically dense rubidium gas cell with a coherent light (control light). The output probe light maintained its quadrature squeezing within the transparency window caused by the electromagnetically induced transparency (EIT). The results reported here are the first realization of EIT in the full quantum regime.     

Exciton and intracenter radiative recombination in ZnMnTe and CdMnTe quantum wells with optically active manganese ions

The emission spectra of Zn_1?x Mn _x Te/Zn_0.6Mg_0.4Te and Cd_1?x Mn _x Te/Cd_0.5Mg_0.5Te quantum-well structures with different manganese concentrations and quantum-well widths are studied at excitation power densities ranging from 10⁵ to 10⁷ W cm^?2. Under strong optical pumping, intracenter luminescence of Mn²⁺ ions degrades as a result of the interaction of excited managanese ions with high-density excitons. This process is accompanied by a strong broadening of the emission band of quantum-well excitons due to the exciton-exciton interaction and saturation of the exciton ground state. Under pumping at a power density of 10⁵ W cm^?2, stimulated emission of quantum-well excitons arises in CdTe/Cd_0.5Mg_0.5Te. The luminescence kinetics of the quantum-well and barrier excitons is investigated with a high temporal resolution. The effect of the quantum-well width and the managanese concentration on the kinetics and band shape of the Mn²⁺ intracenter luminescence characterized by the contribution of the manganese interface ions is determined.     

Observation of field quenching of photo-induced effects in hydrogenated amorphous silicon

Field quenching phenomena were observed in the photo-induced changes in dark current—voltage and dark low frequency capacitance-voltage characteristics of hydrogenated amorphous silicon (a-Si:H) diodes. The photo-induced changes in photoconductivity of undoped a-Si:H measured in coplanar type samples also depended on the externally applied electric field. The mechanisms of the field quenching were discussed referring to trapping and/or recombination of photogenerated carriers in a-Si:H.     

The axiom of real Blackwell determinacy

The theory of infinite games with slightly imperfect information has been developed for games with finitely and countably many moves. In this paper, we shift the discussion to games with uncountably many possible moves, introducing the axiom of real Blackwell determinacy ${\mathsf{Bl-AD}_\mathbb{R}}$ (as an analogue of the axiom of real determinacy ${\mathsf{AD}_\mathbb{R}}$ ). We prove that the consistency strength of ${\mathsf{Bl-AD}_\mathbb{R}}$ is strictly greater than that of AD.     

Influence of Cu electroplating solutions on boron carbon nitride (BCN) film

Cu electroplating is required for the fabrication of Cu/low-k interconnections. The permeation of a plating solution into low-k films during Cu electroplating is a serious challenge for 45-nm nodes and more complex devices. We investigated the influence of Cu electroplating solutions on boron carbon nitride (BCN) as a low-k film. After dipping it into a Cu electroplating solution that contained additives, the BCN film's hydrophilic surface changed to a hydrophobic surface, and the incorporation of water into the BCN film was suppressed by surfactant adsorption. Sulfuric residue was detected on the BCN sample by thermal desorption spectroscopy after treatment in the Cu electroplating solution with additives; however, it was found through electrical measurements that this solution did not affect the leakage current or the dielectric constant of the BCN film. We successfully fabricated an electroplating Cu layer on a BCN film with good adhesion, and we believe that this BCN film is a sufficiently useful material for Cu/BCN integration in LSI.     

On a conjecture of ōshima

The set of homotopy classes of self maps of a compact, connected Lie group G is a group by the pointwise multiplication which we denote by H(G), and it is known to be nilpotent. ōshima [H. ōshima, Self homotopy group of the exceptional Lie group G₂, J. Math. Kyoto Univ. 40 (1) (2000) 177-184] conjectured: if G is simple, then H(G) is nilpotent of class ?rankG. We show this is true for PU(p) which is the first high rank example.     

Lamellar thickening in nascent poly(acrylonitrile) upon annealing

No systematic study has been reported on the lamellar thickening in atactic poly(acrylonitrile) (PAN) upon annealing because PAN, in the form of solution‐cast films or their drawn products, generally shows no small‐angle X‐ray scattering (SAXS) maximum corresponding to the lamellar thickness. In this work, PAN crystals were precipitated during the thermal polymerization of acrylonitrile in solution. The nascent PAN film, obtained by the filtration of the crystal suspension, exhibited a clear SAXS maximum revealing the lamellar structure. The lamellar thickening upon annealing of the nascent PAN films was studied in the temperature range 100–180 °C, where the degradation was minimal, as confirmed by the absence of an IR absorption band at 1605 cm⁻¹ ascribed to the cyclized nitrile groups. Above 190 °C, the degradation of the samples was significant, and the SAXS became too broad to determine the scattering maximum. The long period was significantly affected by the annealing time (t_a) and the temperature (T_a). Depending on t_a, three stages were observed for the lamellar thickening behavior. The lamellar thickness stayed constant in stage I (t_a = 0.5–3 min, depending on T_a), rapidly increased in stage II (t_a = 0.5–8 min), and stayed at a constant value characteristic for each T_a at yet longer t_a's in stage III. The lamellar thickness characteristic for T_a increased rapidly with increasing T_a at 165 °C (or higher), which was 152 °C lower than the estimated melting temperature of PAN (T_m = 317 °C). A possible mechanism for such lamellar thickening in PAN far below the T_m is discussed on the basis of the enhanced chain mobility in the crystalline phase above the crystal/crystal reversible transition at 165–170 °C detected by differential scanning calorimetry and wide‐angle X‐ray diffraction. The structural changes associated with annealing are also discussed. © 2000 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 38: 2571–2579, 2000     

Dynamic Lone Pair Expression as Chemical Bonding Origin of Giant Phonon Anharmonicity in Thermoelectric InTe

Loosely bonded (“rattling”) atoms with s² lone pair electrons are usually associated with strong anharmonicity and unexpectedly low thermal conductivity, yet their detailed correlation remains largely unknown. Here we resolve this correlation in thermoelectric InTe by combining chemical bonding analysis, inelastic X-ray and neutron scattering, and first principles phonon calculations. We successfully probe soft low-lying transverse phonons dominated by large In¹⁺ z-axis motions, and their giant anharmonicity. We show that the highly anharmonic phonons arise from the dynamic lone pair expression with unstable occupied antibonding states induced by the covalency between delocalized In¹⁺ 5s² lone pair electrons and Te 5p states. This work pinpoints the microscopic origin of strong anharmonicity driven by rattling atoms with stereochemical lone pair activity, important for designing efficient materials for thermoelectric energy conversion.