Quantum interference of Rashba-type spin-split surface state electrons

We studied the quantum interference of electrons in the Bi (p(x), p(y)) orbital-derived j = 1/2 spin-split surface states at Bi/Ag(111)√3 × √3 surfaces of 10 monolayer thick Ag(111) films on Si(111) substrates. Surface electron standing waves were observed clearly at the energy (E) below the intersection of the two spin-split downward dispersing parabola bands (E(x)). The E dependence of the standing wave pattern reveals the dispersion as the average of the two spin-split surface bands due to the interference between |(k + Δ), ↑> and |-(k - Δ), ↑> [or (|(k - Δ), ↓>) and |-(k + Δ), ↓>] states. In contrast, it was impossible to deduce the dispersion from the standing wave pattern at E ≥ E(x) because the surface electron cannot find its backscattered state with the same spin polarization.     

Surgical effects on soft tissue produced by a 405-nm violet diode laser in vivo

This study evaluated the surgical performance of a 405-nm diode laser in vivo, using living rat liver tissue. Tissue was incised by irradiation with the laser at low output power ranging from 1 W (722 W/cm²) to 3 W (2165 W/cm²) on a manual control at a rate of 1 mm/s. As a control, incisions using a stainless scalpel were compared. Immediately after operation, the surface of the incisions was macroscopically observed and histopathologically evaluated by microscopy. Laser-ablated liver tissue was smooth with observable signs of remnant carbonization and easily acquired hemostasis. The thickness of the denatured layer increased in proportion to the output power; the coagulation layer did not thicken accordingly. Bleeding could not be stopped for tissues incised with the stainless scalpel. The 405-nm diode laser thus proved to be effective for ablating soft tissue with high hemostatic ability at low power.     

Interaction of Short Laser Pulses in Wavelength Range from Infrared to X‐ray with Metals,Semiconductors, and Dielectrics

Laser‐matter interaction is defined by an electronic band structure of condensed matter and frequency ω_L of electromagnetic radiation. In the range of moderate fluences, the energy absorbed by electrons from radiation finally thermalizes in the ion thermal energy. The thermalization processes are different for optical as compared with X‐ray quanta and for metals relative to semiconductors and dielectrics, since the light absorption and electron‐electron, electron‐ion dynamics are sensitive to the electron population in a conduction band and the width of a forbidden gap. Although the thermalization processes are different, the final state is simply a heated matter. Laser heating creates powerful stresses in a target if duration of a laser pulse τ_L is short in acoustic time scale. Nucleation and material removal take place under such stresses. Such way of removal is called here the spallative ablation. Thus the spallative ablation is an ablation mechanism universally important for qualitatively different materials and quanta (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photoabsorption spectra of CF3I and thermally dissociated CF3I near the C 1s, I 3d and F 1s ionisation thresholds

We report soft X-ray total ion yield and angular-resolved ion yield spectra of CF₃I in the C 1s, I 3d and F 1s ionisation regions, and tentatively assign the observed electronic states. Anisotropy in ion yield is observed only for the C transition, indicating that the dipole moment for this transition is parallel to the C_3v. The effusive source of CF₃I is heated to 800 K to produce a mixture of CF₃ and I, and the resulting spectra are compared to those recorded at room temperature.     

Angle-resolved photoemission of the c(2 × 2) and c(3 × 1) oxygen overlayers on Fe(110)

Angle-resolved photoemission spectroscopy utilizing synchrotron radiation has been used to study the band structure of the c(2×2) and (3×1) oxygen overlayers on Fe(110). The symmetries of the O-2p-derived states at the center of the surface Brillouin zone $\text{(}\text{Γ}\text{)}$ were identified using polarized light. At $\text{Γ}$ the p_xp_y- and p_z-derived levels are at about 5.5 and 7.0 eV below the Fermi level, respectively, for both ordered overlayers. The p-states of the c(2×2)-O structure show very little dispersion (?0.1 eV) with $\text{k}{}_{\mathrm{}}$. On the other hand, the c(3×1)-O overlayer exhibits considerable dispersion of ～1.6 eV. The essential features of the measured dispersion are reproduced well by the dispersion predicted in a qualitative way for an isolated c(3×1) oxygen monolayer.     

Amorphous GaP produced by ion implantation

Two types of non-crystalline states (“disordered” and “amorphous”) of GaP were produced by using ion implantation and post annealing. A structural-phase-transition-like annealing behaviour from the “disordered” state to the “amorphous” state was observed.The ion dose dependence and the annealing behaviour of the atomic structure of GaP implanted with 200 keV ? N⁺ ions were studied by using electron diffraction, backscattering and volume change measurements. The electronic structure was also investigated by measuring optical absorption and electrical conductivity.The implanted layer gradually loses the crystalline order with the increase of the nitrogen dose.The optical absorption coefficient α and electric conductivity σ of GaP crystals implanted with 200 keV?N⁺ ions of 1 × 10¹⁶ cm^?2 were expressed as αhν = C(hν ? E₀)ⁿ and log $\text{σ = A ? BT}{}^{\mathrm{<mtext>-</mtext><mtext>1</mtext><mtext>4</mtext>}}$, respectively. Moreover, the volume of the implanted layer increased about three percent and the electron diffraction pattern was diffused halo whose intensity monotonically decreases along the radial direction. These results indicate that the as-implanted layer has neither a long range order nor a short range order (“disordered state”).In the sample implanted at 1 × 10¹⁶ cm^?2, a structural phase-transition-like annealing stage was observed at around 400°C. That is, the optical absorption coefficient α abruptly fell off from 6 × 10⁴ to 7 × 10³ cm^?1 and the volume of the implanted layer decreased about 2% within an increase of less than 10 degrees in the anneal temperature. Moreover, the short range order of the lattice structure appeared in the electron diffraction pattern. According to the backscattering experiment, the heavily implanted GaP was still in the non-crystalline state even after annealing.These facts lead us to believe that heavily implanted GaP, followed by annealing at around 400°C, is in the “amorphous” state, although as-implanted Gap is not in the “amorphous” state but in the “disordered” state.     

Uniform convexity of ψ-direct sums of Banach spaces

Let X and Y be Banach spaces and ψ a continuous convex function on the unit interval [0,1] satisfying certain conditions. Let X⊕_ψY be the direct sum of X and Y equipped with the associated norm with ψ. We show that X⊕_ψY is uniformly convex if and only if X,Y are uniformly convex and ψ is strictly convex. As a corollary we obtain that the ?_p,q-direct sum (not p=q=1 nor ∞), is uniformly convex if and only if X,Y are, where ?_p,q is the Lorentz sequence space. These results extend the well-known fact for the ?_p-sum . Some other examples are also presented.     

Laser isotope separation of tritium from deuterium: CO2-laser-induced multiphoton dissociation of C2TF5 in C2DF5

Isotope separation of tritium from deuterium in heavy water was attempted by CO₂-laser-induced, highly-selective multiphoton dissociation of C₂TF₅ present in C₂DF₅. Single-step T/D separation factors exceeding 3000, 1000, and 500 were attained, respectively, for the first time with CO₂ laser 10P(34) 931.0 cm^?1 at 10, 20, and 30 Torr pentafluoroethane pressures at ?78 °C (i.e., equivalent to 15, 30, and 45 Torr at room temperature).