Observation of resonance recombination lines in electron excited auger spectra of Gd

Combined measurements of electron excited N_4,5 Auger spectra and photoelectron emission on clean and oxidized Gd lead to a distinction between Auger lines originating from 4d → continuum and 4d → 4? resonance excitations. Several Auger structures are identified as due to the direct recombination of 4d⁹4?⁸ states with the 4f and valence electrons. The shape of the most prominent Auger line for oxidized Gd agrees perfectly with the Fano profile of the 4? photoemission intensity.     

Total Valuation Rings of Ore Extensions

We consider extensions of a total valuation ring V of a skew field K to the Ore extension K(X;σ, δ) for an endomorphism σ of K and a σ-derivation δ. It is shown that there exists an extension R of V with X ∈ R, such that ${\overline X}$ is transcendental over V/J(V) if and only if (σ,δ) is compatible with V, where ${\overline X} = X + J(R^(1))$ . In the case V is invariant, it is established that there is an invariant extension R of V in K(X;σ,δ) such that ${\overline X}$ is transcendental if and only if σ(a)V = aV and δ(a) ∈ aV for all a ∈ K.     

Spontaneous luminescence due to high density electron-hole plasma in GaAs under nano- and pico-second pulse excitation

Spontaneous luminescence due to high density electron-hole plasma in GaAs is observed at 4.2 K under nano- and pico-second pulse excitation. From the pico-second time-resolved spectra, it is found that the hot carriers are cooled down rapidly within 150 psec, and the changes of spectra are not appreciable in the later stage. One may consider, together with results of the spectral shape analysis, that the electron-hole liquid formation is improbable at least within the time range observed.     

Calculation of collisional and radiative transition probabilities between excited argon levels

Average radiative transition probabilities for argon atoms have been calculated for transitions between 24 levels in two groups characterized by the atomic core terms ²P_1/2 and ²P_3/2 by using the method of Bates and Damgaard. The results are compared with data in the NBS tables (Wiese et al.) and with those of Katsonis and Drawin. We find satisfactory agreement for the order of magnitude, even for transitions between lower lying levels. Parameters, which appear in Drawin's semiempirical cross-section expressions for electronic excitation of optically allowed and parity-forbidden transitions, are determined with the multipole expansion method proposed by Sobel'man for transitions between the specified levels. Most of these are easily obtained, but the method must be improved for transitions between levels having the same azimuthal quantum number because the summation over the constituent terms does not converge.     

Nanometric summation architecture based on optical near-field interaction between quantum dots

A nanoscale data summation architecture is proposed and experimentally demonstrated based on the optical near-field interaction between quantum dots. Based on local electromagnetic interactions between a few nanometric elements via optical near fields, we can combine multiple excitations at a certain quantum dot, which allows construction of a summation architecture. Summation plays a key role for content-addressable memory, which is one of the most important functions in optical networks.     

Development of a miniature double-pass cylindrical mirror electron energy analyzer (DPCMA), and its application to Auger photoelectron coincidence spectroscopy (APECS)

We have developed a miniature double-pass cylindrical mirror electron energy analyzer (DPCMA) with an outer diameter of 26 mm. The DPCMA consists of a shield for the electric field, inner and outer cylinders, two pinholes with a diameter of 2.0 mm, and an electron multiplier. By assembling the DPCMA in a coaxially symmetric mirror electron energy analyzer (ASMA) coaxially and confocally we developed an analyzer for Auger photoelectron coincidence spectroscopy (APECS). The performance was estimated by measuring the Si-LVV-Auger Si-1s-photoelectron coincidence spectra of clean Si(1 1 1). The electron-energy resolution of the DPCMA was estimated to be E/ΔE = 20. This value is better than that of the miniature single-pass CMA (E/ΔE = 12) that was used in the previous APECS analyzer.