紫外波段CH2I2分子的光解离动力学研究

利用离子速度成像方法,研究CH2I2分子在277—305nm范围内若干波长处的光解离动力学.通过同一束激光经(2+1)共振多光子电离(REMPI)过程探测光解碎片I(2P32)和I(2P12),得到了不同激发波长处的离子速度分布图像,从而获得CH2I2光解产物的能量分配和角分布.实验发现,碎片CH2I自由基有很高的内能激发,约占总可资用能的80%,该能量分配可以较好地用冲击模型来解释.实验还发现,产物I(2P32)和I(2P12)具有很不相同的平动能分布,结合所得到的碎片能量分配和角分布,我们对碎片I(2P32)和I(2P12)生成机理进行了分析,指出CH2I2分子电子激发态的绝热和非绝热解离决定了碎片的平动能分布. 关键词： CH2I2 离子速度成像 绝热和非绝热解离     

On the Lp–Lq maximal regularity for Stokes equations with Robin boundary condition in a bounded domain

We obtain the L_p–L_q maximal regularity of the Stokes equations with Robin boundary condition in a bounded domain in ?ⁿ (n?2). The Robin condition consists of two conditions: v ? u=0 and αu+β(T(u, p)v – 〈T(u, p)v, v〉v)=h on the boundary of the domain with α, β?0 and α+β=1, where u and p denote a velocity vector and a pressure, T(u, p) the stress tensor for the Stokes flow and v the unit outer normal to the boundary of the domain. It presents the slip condition when β=1 and non‐slip one when α=1, respectively. The slip condition is appropriate for problems that involve free boundaries. Copyright © 2006 John Wiley & Sons, Ltd.     

关于组合最优化理论的多媒体教学实践

本文讨论和分析了开发组合最比化理论系列课程多媒体课件的基本认识、课件的主要特色和体会，并提出了使用多媒体课件中应注意的问题．     

Investigation on nonradiative decay of I13/2→I15/2 transition of Er-doped oxide glasses

Nonradiative decay of ⁴I_13/2→⁴I_15/2 transition of Er³⁺ has been investigated in a series of oxide glasses. For Er³⁺-doped glass samples, the Judd-Ofelt analysis on absorption spectra was performed and the fluorescence lifetime was determined by extrapolating to zero Er³⁺ concentration limit. Infrared spectra were measured in order to investigate the influence of OH⁻ groups in different glasses. The effects of glass matrix on the decay rate were discussed from the viewpoint of phonon energy, variations of effective fields, and OH⁻ groups. Compared to other glasses, phosphate glass presents low quantum efficiency and large nonradiative decay rate due to its high phonon energy and hygroscopic behavior.     

高斯光束计算平板波导自由传输区远场分布及其修正

对近轴近似条件下求解亥姆霍兹方程得到的高斯光束显式传播公式做了分析，同时，基于基尔霍夫衍射理论，在菲涅耳近似的条件下给出了相应的高斯光束在远场的传播公式，在此基础上，对近轴近似条件做出了定量分析，给出了这个近似条件引入的误差，提出了一种计算高斯光束远场分布的修正方法，并采用有限差分-光束传播方法(FD-BPM)来检验各种方法的准确性。把这种修正方法应用到平面光集成波导器件，如阵列波导光栅(AWG)、蚀刻衍射光栅(EDG)等器件的设计和模拟中，可以大大降低工作的复杂性，同时可以得到精确的结果。     

动能定理在活动物体和固定物体的应用

学生对在运动的参考系中应用动能解题时,总感觉没有把握,不知如何下手,因而常常解错. 如何让学生解决活动坐标系上出现的问题呢? 首先应使学生明白,物体的速度是相对参考系而言的,参考系选取不同,物体的相对速度不同,具有的动能也不同.     

Improvement of real time diffraction efficiency of NGD holograms by introducing electron donors

Nongelatin dichromated holographic film(NGD) is a new holographic recordingmaterial.Holograms recorded on this material have better environmental stability, higherdiffraction efficiency and stronger real time effect, etc..An experimental study to ascertainthe influence of two electron donors, namely,N,N-dimethylformamide(DMF) and dimethyl-sulfoxide(DMSO),on the real time diffraction efficiency(RTDE) of NGD holograms is car-ried out.The pressence of electron donors not only improves the sensitivity,but also enhancesthe real time effect greatly.RTDE of above 60% at±1 orders of NGD plane transimissiongrating is achieved by introducing electron donors.     

Rn上的非初等变换群及其极限集

该文对高维非初等Mò'bius变换群进行了研究,得到了一些重要性质,给出了几个关于离散准则和代数收敛性的定理.     

First-principles study of indium on silicon (1 0 0)—the structure, defects and interdiffusion

The atomic structures of indium (In) on silicon (Si) (1 0 0)-(2 × 1) surface are investigated by the local density approximation using first-principles pseudopotentials. Total energy optimizations show that the energetically favored structure is the parallel ad-dimer model. The adsorption energy of In on ideal Si(1 0 0)-(1 × 1) surface is significantly higher than that on reconstructed Si(1 0 0)-(2 × 1) surface, suggesting that In adsorption does not break the Si-Si dimer bond of the substrate. When Si surface contains single dimer vacancy defects, In chain will be interrupted, leading to disconnected In nanowires. Displacive adsorption of In on Si(1 0 0) is also considered, and the calculation suggests that interdiffusion of In into Si substrate will not be favorable under equilibrium conditions.