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41.
Gauss periods give an exponentiation algorithm that is fast for many finite fields but slow for many other fields. The current paper presents a different method for construction of elements that yield a fast exponentiation algorithm for finite fields where the Gauss period method is slow or does not work. The basic idea is to use elements of low multiplicative order and search for primitive elements that are binomial or trinomial of these elements. Computational experiments indicate that such primitive elements exist, and it is shown that they can be exponentiated fast.  相似文献   
42.
Neodymium-substituted Bi4Ti3O12 (BNdT) thin films were prepared by a chemical solution deposition technique on platinum- coated silicon substrates. All of the samples were annealed at the relatively low temperature of 600 °C by a rapid thermal annealing process in different atmospheres, such as O2, air, and nitrogen, and vacuum. Irrespective of different annealing atmospheres, all of the BNdT thin films exhibit good ferroelectric properties, such as a saturated hysteresis loop, good fatigue endurance, and low leakage current density. A large remanent polarization (Pr) of ∼48 μC/cm2 with an electric field of 240 kV/cm was observed from the BNdT thin film annealed in O2 atmosphere. The BNdT thin films annealed in nitrogen and vacuum, at reduced oxygen partial pressures, exhibit smaller Pr than that annealed in oxygen. The difference of Pr of the BNdT thin films annealed in different atmospheres may originate from differences in the grain sizes and the number of oxygen vacancies. PACS 77.55.+f; 77.80.-e; 77.80.Fm; 81.15.-z  相似文献   
43.
郭永新  赵喆  刘世兴  王勇  朱娜  韩晓静 《物理学报》2006,55(8):3838-3844
就一般非完整约束系统,从约束方程满足的变分恒等式出发,利用增广位形流形上的向量场定义三类非自由变分,即非完整变分:vakonomic变分、Hlder变分、Suslov变分,并讨论它们之间的关系以及它们成为自由变分的充要条件.利用非完整变分以及相应的积分变分原理建立两类动力学方程:vakonomic方程和Routh方程或Chaplygin方程.通过vakonomic方程分别与Routh方程和Chaplygin方程比较,得到它们具有共同解的两类充分必要条件.这些条件并不是约束的可积性条件. 关键词: 非完整约束 非完整变分 Chetaev条件 vakonomic动力学  相似文献   
44.
45.
The purpose of this paper is to give a proof of Kummer type congruence for the q-Bernoulli numbers of higher order, which is an answer to a part of the problem in a previous publication (see Indian J. Pure Appl. Math. 32 (2001) 1565-1570).  相似文献   
46.
This paper reports that the m-plane GaN layer is grown on (200)-plane LiAlO2 substrate by metal-organic chemical wpour deposition (MOCVD) method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer's thickness. The high transmittance (80%), sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.  相似文献   
47.
Homo-apioneplanocin A was efficiently synthesized via stereoselective hydroxymethylation, regio- and chemoselective hydroboration, and chemoselective oxidation as key steps from d-ribose.  相似文献   
48.
Kim P  Barry CE  Dowd CS 《Tetrahedron letters》2006,47(20):3447-3451
Vinyl and diene derivatives of thiolactomycin have been prepared via Horner-Wadsworth-Emmons olefination from protected 5-formyl-3,5-dimethylthiotetronic acid. Several 4-position protecting groups and a variety of phosphonates were evaluated, with MOM protection and β-ketophosphonates yielding the highest ratio of the desired product to deformylated product.  相似文献   
49.
The fuzzification of convex sets in median algebras is considered, and some of their properties are investigated. A characterization of finite valued fuzzy convex set is given.  相似文献   
50.
A new method, based on zero point of longitudinal electric field, was used to determine the spatial resolution of external electro-optic (EO) probing equipment. Considering the diffraction of Gauss beam, the result of external EO probing was simulated which was in accordance with the experiment. A spatial resolution <1 μm was demonstrated initially in our equipment using 650 nm laser diode as probe beam and semi-insulating GaP as probe tip.  相似文献   
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