Synthesis and structural characterization of cationic rhenium(V) and technetium(V) dioxo complexes containing four N-heterocyclic carbene ligands

Cationic dioxorhenium and dioxotechnetium complexes of the composition [MO(2)(L(1))(4)](+) (L(1) = 1,3-diisopropyl-4,5-dimethylimidazol-2-ylidene) have been prepared from various starting materials and studied spectroscopically and by X-ray crystallography. The metal-carbon distances range from 2.216(4) to 2.232(4) A indicating mainly sigma-bonding.     

Dynamic criteria for melting in two dimensions

The two-dimensional (2D) melting transition is analyzed on the basis of the long-time behavior of a modified Lindemann parameter in 2D gamma(L)(t) and the bond-angular correlation function g(6)(t). Using video microscopy complete positional data are obtained over five decades in time for an ensemble of superparamagnetic colloidal particles confined to an air-water interface. We find that each of the three phases (solid/hexatic/isotropic liquid) is uniquely characterized by the long-time behavior of gamma(L)(t), g(6)(t), and the non-Gaussian parameter of the relative neighbor-neighbor displacement.     

Surface electronic properties of sulfur-treated GaAs determined by surface photovoltage measurement and its computer simulation

The Kelvin method together with the simulations of surface photovoltage has been used to determine the surface electronic properties, i.e. the surface band bending (qV_S), surface state density (N_SS0) and surface fixed charge (Q_Fx) of S₂Cl₂-treated GaAs (100) surfaces. The measured values of surface photovoltage (SPV) do not show saturation at high photon flux densities in contradiction to the simple theory of SPV. This behavior of SPV agrees very well with the rigorous computer simulations and can be explained in terms of the Dember effect. Moreover, the SPV values become insensitive to surface states at moderate photon flux densities. On this basis, the surface band bending of untreated (0.79 eV) and S₂Cl₂-treated (0.60 eV) GaAs surfaces was determined. The band diagrams summarizing the obtained results proved the influence on the potential variations not only from the ionized surface states and surface fixed charge but also from the surface dipole layer on the S₂Cl₂-treated GaAs surface. The dipole arises most probably due to the S-Ga bonding on the surface. The presented results offer an alternative explanation for increased PL commonly observed after the sulfidation in the absence of substantial reduction in the band bending.     

Visual spatial memory is enhanced in female rats (but inhibited in males) by dietary soy phytoestrogens

Background  

In learning and memory tasks, requiring visual spatial memory (VSM), males exhibit superior performance to females (a difference attributed to the hormonal influence of estrogen). This study examined the influence of phytoestrogens (estrogen-like plant compounds) on VSM, utilizing radial arm-maze methods to examine varying aspects of memory. Additionally, brain phytoestrogen, calbindin (CALB), and cyclooxygenase-2 (COX-2) levels were determined.     

Atomistic Simulation Study of Cu0.327Ni0.673 Alloys: from Solid Solution to Phase Segregation

We present a combined Monte‐Carlo/molecular dynamics study of a Cu_0.327Ni_0.673 alloy system. On the basis of nearest‐neighbor coordination number analyses atomic clustering and phase segregation is explored. Along this line, free energy profiles are calculated and separated into entropic and energetic contributions. The competition of both terms was found in accordance to the experimental phase diagrams (phase separation of the solid solution below about 600 Kelvin). Two independent simulation runs were performed. At 1000 Kelvin the observed configurations correspond to solid solutions exhibiting a weak tendency to cluster atoms of identical species. At room temperature the energetic favoring of atomic separation is clearly dominant and leads to the formation of Ni‐rich and Cu‐rich domains. The latter are separated by interfacial regions whose width ranges from 0.5 to 1 nanometers.