黄花倒水莲与六月雪中6种金属元素的测定

本文采用火焰原子吸收光谱法对中草药黄花倒水莲、六月雪中茎部的Ca、Zn、Mn、Mg、Fe、Cu的含量进行了测定,方法简单、精密度好,回收率在93%—100%之间,结果令人满意。     

熔融织构Y0．8Ca0．2Ba2Cu3Oy的电子比热

采用热驰豫方法在0到9T范围内测量了熔融织构Y0．8Ca0．2Ba2Cu3Oy的比热．零场下，2-180K的比热结果可以用Einstein模型来描述．通过4-Einstein峰拟合声子谱的方法，我们分别处理了不同磁场下超导转变附近的比热，获得了晶格比热和不同磁场下的电子比热，并将实验结果与London模型的计算结果进行对比，发现London模型能够很好地模拟出我们的实验结果．     

本征Josephson单结的电流-电压特性

采用光刻蚀和Ar离子刻蚀技术成功地在Bi-2212单晶表面制备出台阶型本征Josephson单个结，并在5-65K范围内用四引线法测量了该结零场下的Ⅰ～Ⅴ特征曲线．结果表明，临界电流几乎保持不变，但返回电流随温度增加而增大；与此同时，Mccumber参数βc随着温度增加而减小．临界温度附近，跳跃电压△V明显偏离BCS理论．     

Electrical Characterization of Metal-Insulator-Metal Capacitors with Atomic-Layer-Deposited HfO2 Dielectrics for Radio Frequency Integrated Circuit Application

Metal-insulator-metal （MIM） capacitors with atomic-layer-deposited HfO2 dielectric and TaN electrodes are investigated for rf integrated circuit applications. For 12nm HfO2, the fabricated capacitor exhibits a high capacitance density of 15.5fF/μm2 at 100kHz, a small leakage current density of 6.4 × 10^-9 A/cm^2 at 1.8V and 125℃, a breakdown electric field of 2.6 MV//cm as well as voltage coefficients of capacitance （VCCs） of 2110ppm/V^2 and -824 ppm/V at 100kHz. Further, it is deduced that the conduction mechanism in the high field range is dominated by the Poole-Frenkel emission, and the conduction mechanism in the low field range is possibly related to trap-assisted tunnelling. Finally, comparison of various HfO2 MIM capacitors is present, suggesting that the present MIM capacitor is a promising candidate for future rf integrated circuit application.     

非线型三原子分子势能面的Lie代数方法

利用Lie代数方法得到三原子分子的代数Hamiltonian ,通过对光谱数据的拟合确定其展开系数 ,再用相干态得到代数Hamiltonian的经典极限 ,从而得到三原子分子的势能面 .以H2 O分子为例进行了计算 ,其理论值与实验结果一致. The algebraic Hamiltonian for a triatomic molecule can be obtained by using dynamical Lie algebra method (the expansion coefficients are obtained by fitting spectroscopic data). Triatomic molecular potential energy surface (PES) is obtained by using coherent state to take the classical limits of algebraic Hamiltonian. This PES is applied to H 2O molecule, and the deduced force constant is in good agreement with the experimental data.     

Predicting lepton flavor mixing from Δ(48) and generalized C P symmetries

We propose to understand the mixing angles and C P-violating phases from the ?(48) family symmetry combined with the generalized C P symmetry. A model-independent analysis is performed by scanning all the possible symmetry breaking chains. We find a new mixing pattern with only one free parameter, excellent agreement with the observed mixing angles can be achieved and all the C P-violating phases are predicted to take nontrivial values. This mixing pattern is testable in the near future neutrino oscillation and neutrinoless double-beta decay experiments.Finally, a flavor model is constructed to realize this mixing pattern.     

场分析法与阻抗叠加方法在速调管输出腔间隙阻抗计算中的应用

 从分析速调管输出回路的电磁场分量入手,结合微波电路理论,提出了计算速调管输出回路间隙阻抗的场分析法。对于在谐振模式交叠频带上,群聚电子束电流同时与各模式的阻抗相作用,总阻抗是各模式阻抗的代数叠加的情况,提出了阻抗叠加方法。该方法原则上可求解任意给定间隙电阻所对应的间隙电抗值。计算表明,场分析法与等效间隙阻抗法计算结果最大相对误差为1.5％,阻抗叠加方法计算结果与冷测数据最大相对误差为10％。分析表明,多个谐振模式的引进是速调管输出腔加载滤波器展宽频带的物理实质。     

InN分凝的InGaN薄膜的光致发光与吸收谱

我们用低压MOCVD在蓝宝石衬底生长了InGaN/GaN外延层.用X射线衍射(XRD),光致发光谱(PL),光吸收谱等测量手段,研究了InGaN的辐射发光机制.In组分利用Vegard定理和XRD测量得到.我们发现随着In组分的增加,在光吸收谱上发现吸收边的红移和较宽的Urbach带尾;PL谱中低能端的发射渐渐成为主导,并且在PL激发谱中InGaN峰也变宽.我们认为压电效应改变了InGaN的能带结构,从而影响了光学吸收特性.而在InN量子点中的辐射复合则是InGaN层发光的起源.     

基于模型的制冷系统智能化仿真研究

为提高仿真方法对实际制冷空调装置多样性和复杂性的自适应性,将人工智能引入到制冷系统仿真研究中,构建基于数学模型与人工智能技术相结合方式的制冷系统智能仿真理论．本文介绍了上海交通大学在此方面所取得的研究成果,并提出了今后进一步发展的方向．本项研究有利于推进制冷装置设计方法现代化,研究思路对于一般热力系统仿真亦有参考价值．     

螺线管场下强流相对论电子束焦斑尺寸的限制

 分析了螺线管场下影响强流相对论电子束聚焦的主要因素,并给出了各影响因素所限制的最小焦斑。计算结果表明,当发射度和能散度的值分别控制在0.397mm× rad和1%以内, 单个螺线管磁轴的偏心不大于0.54mrad,初始注入束偏心不大于1mrad时,对于20MeV、3kA的电子束和15MeV、2.5kA的电子束,最终打靶束焦斑均可小于1.5mm。