顶发射白光OLED器件制备及其色坐标漂移机制研究

采用了高反射率金属Al和电化学性能稳定的金属Mo,在硅基底上制备了多层结构的 Al/Mo/MoO₃阳极,并研究了不同MoO₃厚度下多层阳极的反射率。在此基础上,通过发光层共掺杂制备了顶部发光OLED器件,并对器件发光机制进行了系统研究和分析。实验结果表明：采用发光层共掺杂制备的顶部发光OLED器件的色坐标,随电流密度或电压的增加而发生漂移;OLED器件色坐标漂移的原因是三基色发光强度随电流密度的增加,逐渐偏离了形成白光(0.33, 0.33)所需三基色强度比例值,导致了OLED器件的色坐标发生了漂移,其机制是发光层中主-客之间能量转移和陷阱共同作用的结果。进一步研究发现,在不同电压下,红光发光强度随驱动电压(或电流密度)增大而线性地减小。     

基于发射光谱及成分分析的激光除漆机理研究

基于激光诱导击穿光谱和X射线能谱技术,测量了激光与油漆作用时发射光谱及作用前后元素成分的变化,以此研究了激光除漆的机理。实验测量了不同纳秒激光能量下激光诱导击穿油漆表面的光谱,计算了等离子体的电子密度和温度。通过扫描电子显微镜对油漆烧蚀形貌进行了分析,采用X射线能谱仪测量了烧蚀前后油漆成分的变化。研究结果表明,等离子体电子密度、温度以及烧蚀区域大小都随着入射激光能量的增加逐渐增加。在激光作用前后油漆中碳(C)含量明显降低,原子百分比从78.25%降低到67.07%,说明激光与油漆作用过程中发生了烧蚀。通过对比钛(Ti)元素、C元素和铝(Al)元素的相对原子比例,表明更高的激光能量下油漆烧蚀的更剧烈。该工作对深入研究激光除漆机理有重要意义。     

新型LD泵浦振荡器与多程放大系统联机实验

 新型LD泵浦振荡器采用环形结构，具有单纵模几率高、时间波形和幅度高度稳定等特点，这些特点使其与多程放大器的联机非常方便，没有系统多脉冲注入破坏风险和能量不稳破坏风险。联机实验取得了显著成果，输出能量达1.252kJ，是当前国内固体激光器单束输出最高能量，此时输出脉冲脉宽为1.26ns，光束口径为20cm×20cm，平均功率密度达2.5GW/cm²。     

超细磁性钴粉的制备及磁性能

在室温条件下,水溶液中以聚乙烯吡咯烷酮K30(PVP)作为分散剂,水合联氨为还原剂,制备超细磁性钴粉。用扫描电子显微镜(SEM)、X射线衍射仪(XRD)、能谱仪(EDS)和振动样品磁强计(VSM)对其进行表征。结果显示:超细磁性钴粉为蠕虫状微球,粒径约为0.8μm,晶型为面心立方(FCC)和六方密堆积(HCP)结构,饱和磁化强度为25.6 emu·g~(-1),矫顽力为499.2 Oe(1 Oe=79.577 5 A·m~(-1),测试温度为298.15 K)。     

一种卟啉-螺吡喃化合物的合成及其离子响应行为研究

合成了一种卟啉-螺吡喃化合物,并对其结构进行详细表征。在此基础上,通过紫外光谱研究了其光致异构与离子响应特征,并提出了一种解释卟啉环与螺吡喃之间耦合行为的新机制。研究结果表明,金属离子会诱导合成的卟啉-螺吡喃分子产生新的构象,从而影响螺吡喃的光致异构。此外,随着离子半径以及亲电能力的不同,卟啉-螺吡喃衍生物的光学特性也产生明显差异。这种卟啉-螺吡喃化合物为构建新型离子探针提供了一种思路。     

Monte Carlo simulation of indoor external exposure due to gamma-emitting radionuclides in building materials

The use of building materials containing naturally occurring radionuclides such as^40K,^238U,^232Th and their progeny, could lead to external exposures to the residents of such buildings. In this paper, a set of models are constructed to calculate the specific effective dose rates（the effective dose rate per Bq/kg of ^40K, the ^238U series,and the ^232Th series） imposed on residents by building materials with the MCNPX code. The effect of chemical composition, position concerned in the room and thickness as well as density of material is analyzed. In order to facilitate more precise assessment of indoor external dose due to gamma-emitting radionuclides in building materials,three regressive expressions are proposed and validated by measured data to calculate specific effective rates for40 K,the238U series and the232 Th series, respectively.     

GaN Films Grown on Si （111） Substrates Using a Composite Buffer with Low Temperature A1N Interlayer

A GaN interlayer between low temperature （LT） A1N and high temperature （PIT） A1N is introduced to combine HT AIN, LT A1N and composition-graded A1GaN as a novel buffer layer for GaN films grown on Si （111） substrates. The crystal quality, surface morphology and strain state of the GaN film with this new buffer are compared with those of GaN grown on a conventional buffer structure. By changing the thickness of LT A1N, the crystal quality is optimized and the crack-free GaN film is obtained. The in-plane strain in the GaN film can be changed from tensile to compressive strain with the increase in LT A1N thickness.     

A Diode-Pumped 1617 nm Single Longitudinal Mode Er：YAG Laser with Intra-Cavity Etalons

We demonstrate the continuous wave p-polarized single longitudinal mode （SLM） operation of an Er：YAG laser at 1617.6nm pumped by a diode-laser with three inserted Fabry-Perot （FP） etalons at room temperature. The Brewster angle inserted FP is applied to obtain the p-polarized laser. For free running, the maximum output power is 570 m W with a pump power of 12.5 W. An incident pump power of 12.5 W is used to generate the maximum p-polarized single longitudinal mode output power of 78.5 m W, corresponding to a slope efficiency of 1.6% and an optical-to-optical efficiency of 0.61%. The beam quality M2 is measured to be 1.15 at the highest SLM output power. This stable polarized SLM oscillation is encouraging due to its application for an injection-locked system used as a master laser.     

铜丝光沸石上甲醇羰基化反应的固体核磁共振研究

利用固体核磁共振方法,研究了铜修饰丝光沸石(Cu-H-MOR)分子筛催化甲醇(CH3OH)与一氧化碳(CO)羰基化反应过程.通过研究反应过程中生成的各吸附物种与Cu2+的相互作用,分别对这些吸附物种进行了归属,确定了铜甲氧基(Cu-OCH3)和铜乙酰基(Cu-(CO)-CH3)为羰基化反应过程的中间产物,讨论了可能的反应机理.     

Al掺杂浓度对ZnO陶瓷释能电阻材料性能的影响

为了制备ZnO释能电阻并研究Al掺杂浓度对ZnO释能电阻材料的影响,通过改进的制陶工艺制备了不同Al掺杂浓度的ZnO导电陶瓷。实验结果表明,Al掺杂浓度对ZnO释能电阻的导电性、能量密度和线性度均有较大的影响。Al的掺杂能较好地改善ZnO释能电阻的线性度,非线性系数可低至1.02;Al掺杂能很好地控制ZnO的电阻率,使其达到0.54 Ω·cm;Al掺杂还能较好地改善ZnO陶瓷的均匀性和密度,从而提高ZnO释能电阻的能量吸收密度,能量吸收密度高达720 J/cm³,较金属释能材料高出2~3倍。