A Diode-Pumped 1617 nm Single Longitudinal Mode Er：YAG Laser with Intra-Cavity Etalons

We demonstrate the continuous wave p-polarized single longitudinal mode （SLM） operation of an Er：YAG laser at 1617.6nm pumped by a diode-laser with three inserted Fabry-Perot （FP） etalons at room temperature. The Brewster angle inserted FP is applied to obtain the p-polarized laser. For free running, the maximum output power is 570 m W with a pump power of 12.5 W. An incident pump power of 12.5 W is used to generate the maximum p-polarized single longitudinal mode output power of 78.5 m W, corresponding to a slope efficiency of 1.6% and an optical-to-optical efficiency of 0.61%. The beam quality M2 is measured to be 1.15 at the highest SLM output power. This stable polarized SLM oscillation is encouraging due to its application for an injection-locked system used as a master laser.     

N-邻羟基苯基马来酰胺酸-改性活性炭对Cu(Ⅲ)的吸附性能

研究了新型吸附剂N-邻羟基苯基马来酰胺酸-活性炭(AC-HPMA)对样品中Cu(Ⅱ)的固相萃取并用电感耦合等离子体-原子发射光谱法(ICP-AES)测定。优化了pH值、吸附剂(AC-HPMA)的用量、流速等条件以达到定量吸附(≥95%),同时考察了共存离子的影响和洗脱剂的洗脱条件。本法测定Cu(Ⅱ)的检出限为0.27μg.L-1,将其应用于茯苓、黄河水、青海湖水中的Cu(Ⅱ)含量的测定,加标回收率在96.3%—99.0%之间;用于测定标准物质中铜离子的含量,结果与标准物参照值一致。     

Anomalous Pressure Behavior of N-Cluster Emissions in GaAs0.973Sb0.022N0.005

Photoluminescence of GaAs0.973Sb0.022N0.005 is investigated at different temperatures and pressures. Both the alloy band edge and the N-related emissions, which show different temperature and pressure dependences, are observed. The pressure coefficients obtained in the pressure range 0-1.4GPa for the band edge and N-related emissions are 67 and 45meV/GPa, respectively. The N-related emissions shift to a higher energy in the lower pressure range and then begin to redshift at about 8.5GPa. This redshift is possibly caused by the increase of the X-valley component in the N-related states with increasing pressure.     

Disappearance of Chiral Soliton Solutions and Chiral Phase Transition at High Temperature

The behavior of the chiral soliton model at high temperature is investigated.as well as the influence of thermal effects on the chiral soliton solutions and the fermion condensation is analysed.One possible physical mechanism is established,which is responsible for why there exists a difference between the critical temperature in deconfinement phase transition and that in chiral restoration phase transition.     

微波消解-ICP-AES测定海鸭蛋中的金属元素

建立微波消解海鸭蛋,电感耦合等离子体-原子发射光谱法检测样品中金属元素的方法。分析结果表明,15种元素的相对标准偏差(RSD,n=12)小于2%,回收率范围在91.0%-105.4%之间。该法快速,简单,可靠性高,可多元素同时测定,适用于海鸭蛋的快速分析检测。     

石英衬底上Au缓冲层对ZnO薄膜微结构的影响

采用单源化学气相沉积(SSCVD)法,在石英衬底上以Au为缓冲层,Zn4(OH)2(O2CCH3)6.2H2O为固相源制备ZnO薄膜。SEM和XRD测试ZnO薄膜的微结构,结果表明:相对于SiO2衬底上生长的ZnO薄膜,Au/SiO2衬底上生长的ZnO薄膜具有较好的结晶质量和表面平整度;对制备ZnO薄膜的衬底温度进行了工艺优化,结果表明:500℃时制备的ZnO薄膜颗粒大小均匀,结晶质量较好;通过荧光光谱仪对Au/SiO2衬底上的ZnO薄膜进行光致发光(PL)谱测试,ZnO薄膜在400nm出现紫光发射峰,而没有出现与缺陷相关的深能级发射峰,表明ZnO薄膜具有较好的结晶质量。     

热声热机声场的格子气分析

从格子气自动机演化方程恢复了宏观热声方程,采用D2Q9热格子气模型模拟热声热机系统的压力场、温度场和速度场,获得压力驻波的传播和反射过程。模拟结果显示,在所给模拟条件下压力波具有非线性的特征,变截面附近的流场区域会产生引起非线性耗散的涡流。本文也分析了谐振管几何尺寸及格子气粒子密度对系统频率和压力的影响,验证了热声热机格子气模型的有效性。     

Fringe skeletonizing using an improved derivative sign binary method

A modified derivative sign binary method is proposed to extract fringe skeletons from interferometric fringe patterns. A fringe direction map ranging from 0° to 360° is obtained with an unambiguous relationship between the grayscale and fringe tangent direction. Using this approach, the derivative sign binary map is detected without a fringe direction jump. The dark (light) fringe intensity minimum (maximum) can be extracted automatically to define fringe skeletons. In addition, two different anisotropic one-dimensional filters are described that can be used for further improving the fringe quality. Examples are provided for a holographic interferogram and a Moiré fringe pattern to illustrate applications and benefits of the approach.     

Enhanced Field Emission from Large-Area Arrays of W18O49 Pencil-Like Nanostructure

Field enhancement and field screening are two major factors affecting field emission performance of arrays of quasi one-dimensional nanostructures. We have observed enhanced field emission from large-area arrays of W₁₈O₄₉ pencil-like nanostructure due to both the effects of high aspect ratio and enlarged spacing between neighboring nanostructures. These arrays may be grown on silicon substrates by the multi-step thermal evaporation process. The spacing of nanotip-to-nanotip between neighboring nanostructures may be increased by adjusting the growth temperature. The arrays are observed to have a typical turn-on field as low as about 1.26 MV/m and a threshold field as low as about 3.39 MV/m, resulting in increasing field enhancement and decreasing field screening effect.