Modulation Frequency Multiplexed Tunable Diode Laser Spectroscopy System for Simultaneous CO, CO2 Measurements

A modulation frequency multiplexed dual diode-laser system is developed for simultaneous detection of the two most common fire gas products CO and CO2. Simultaneous detection is achieved by modulating each laser at different frequencies, demodulating the signal by a pair of lock-in amplifiers for each gas. Laser beams are combined and detected by one detector after passing through an identical optical path. The experimental results show little performance degradation associated with modulation frequency multiplexing, and no cross-talk between the two multiplexed detection channels is measured.     

Dimensional Properties of Fractional Brownian Motion

Let B^α = {B^α（t）,t E R^N} be an （N,d）-fractional Brownian motion with Hurst index α∈ （0, 1）. By applying the strong local nondeterminism of B^α, we prove certain forms of uniform Hausdorff dimension results for the images of B^α when N 〉 αd. Our results extend those of Kaufman for one-dimensional Brownian motion.     

亚细胞器诱导的2,4,6-三硝基甲苯阴离子自由基的ESR研究

本文在无氧条件下利用ESR分别观察了肝脏和晶状体的微粒体及线粒体酶在NADPH存在下还原三硝基甲苯(TNT)的过程,检测到参数为g=2.0048±0.0005,A_对位~N=1.215mT,A~N=0.800±0.010mT,A~H=0.122±0.0206mT的自由基信号,并通过电子计算机对ESR谱的模拟证明该自由基信号为TNT硝基阴离子自由基,根据其超精细分裂常数认为,其不配对电子的电子云密度主要分布在对位硝基上。     

微加工薄膜变形镜特性分析

 借助测量微加工薄膜变形镜驱动器的面形影响函数，分析了驱动器的电压-位移函数和驱动器之间的线性叠加性;通过对连续面形变形镜拟合像差的理论分析和实验研究，建立了微加工薄膜变形镜电压解耦模型。分析了对前36阶Zernike模式的拟合残差和拟合能力，指出微加工薄膜变形镜仅可用来拟合低级像差并且有较大的拟合能力和较小的拟合残差，而不能拟合高级像差。     

卡尔曼滤波紫外光度法同时测定酱油、食醋中的山梨酸和苯甲酸

在酸性条件下，采用乙酸乙酯萃取、Na2HPO4溶液反萃取分离酱汪、食醋中的山梨酸、苯甲酸，卡尔曼滤波法计算结果，并与比值导数波谱法进行比较。结果表明，卡尔曼滤波法较地数波谱法有较高准确度和精密度，并能监测干扰物质存在与否。用于实际样品分析有更高的可靠性。     

广义非简谐振子的多尺度微扰理论

应用多尺度微扰理论到广义非简谐振子, 得到了一阶经典和量子微扰解. 特别是 我们的量子解在极限条件下能方便地转变为经典解, 并且坐标和动量算符的对易 关系的简化十分自然. 与Taylor级数解相比较, 无论是在经典还是在量子解 中频率移动都出现在各阶振动表达式中, 所以多尺度微扰解是弱耦合非简谐振动的较好解法.     

Measurement of small-signal and large-signal responses of packaged laser modules at high temperature

In this paper, the pulsed injection method is extended to measure the chip temperature of various packaged laser modules, such as the DFB laser modules, the FP laser modules, and the EML laser modules. An optimal injection condition is obtained by investigating the dependence of the lasing wavelength on the width and period of the injection pulse in a relatively wide temperature range. The small-signal frequency responses and large-signal performances of packaged laser modules at different chip temperature are measured. The adiabatic small-signal modulation characteristics of packaged LD are first extracted. In the large-signal measurement, the effects of chip temperature, bias current and driving signal on the performances of the laser modules are discussed. It has been found that the large-signal performances of the EML modules depend on the different red-shift speeds of the DFB and EAM sections as chip temperature varying, and the optimal characteristics may be achieved at higher temperature.     

Local chemical distribution and electronic structure of Ge1−xTx DMS single crystals (T=Cr,Mn, Fe)

The spatial concentration distribution and local electronic structure of ferromagnetic Ge_1−xT_x (T=Cr, Mn, Fe) DMS single crystals have been investigated by using scanning photoelectron microscopy (SPEM), X-ray absorption spectroscopy (XAS), and photoemission spectroscopy (PES). It is found that doped T ions in Ge_1−xT_x crystals are chemically phase-separated, suggesting that the observed ferromagnetism arises from the phase-separated T-rich phases in Ge_1−xT_x.     

Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices

We investigate the non-equilibrium electron transport properties of double-barrier AlGaAs/GaAs/AlGaAs resonant- tunnelling devices in nonlinear bias using the time-dependent simulation technique. It is found that the bias step of the external bias voltage applied on the device has an important effect on the final current-voltage （I - V） curves. The results show that different bias step applied on the device can change the bistability, hysteresis and current plateau structure of the I - V curve. The current plateau occurs only in the case of small bias step. As the bias step increases, this plateau structure disappears.