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V. I. Zubkov I. S. Shulgunova A. V. Solomonov M. Geller A. Marent D. Bimberg A. E. Zhukov E. S. Semenova V. M. Ustinov 《Bulletin of the Russian Academy of Sciences: Physics》2007,71(1):106-108
In this work, charge-carrier capture by an array of self-assembled InAs/GaAs quantum dots was directly observed for the first time by capacitance recharge. It is proposed to process the obtained transient-capture data by a similar method to that used for emission, by the box-car method. The capture activation energies are determined and compared with the emission activation energies. 相似文献
224.
225.
Sanzhizhapov D. B. Tonevitskii Yu. V. Mognonov D. M. Doroshenko Yu. E. 《Russian Journal of Applied Chemistry》2003,76(4):619-622
New polyimidates were prepared from bisphenols and mono- and dicarboxylic acid imidoyl chlorides. The structures of the polymers were determined, and their physicochemical, chemical, and thermal properties were studied. The possibility of preparing film and compression materials with good mechanical characteristics from these polymers was examined. 相似文献
226.
P.V.V. Jayaweera P.K.D.D.P. Pitigala M.K.I. Seneviratne A.G.U. Perera K. Tennakone 《Infrared Physics & Technology》2007,50(2-3):270-273
All electronic devices are plagued with 1/f noise originating from many causes. The most important factors contributing to 1/f noise in a semiconductor is believed to be recombination of carriers and their trapping at defects and impurity sites. Adsorption of moisture and electron acceptor molecules enhances the intensity of 1/f noise. Amazingly, some molecular species that strongly chelate to the semiconductor surface, suppress 1/f noise owing to passivation of the recombination sites. Thus in addition to sensitization, the dye adsorbed on the nanocrystallites plays a key role in mitigation of recombinations. For this reason dye-sensitized heterojunctions could also find application as low noise NIR photon detectors. Experiments conducted with oxide semiconductors (TiO2, ZnO, SnO2) indicate that the mode of binding of dyes at specific sites determines the extent to which the recombination and 1/f noise are suppressed. The transport of electrons in a nanocrystalline matrix is diffusive with a diffusion coefficient D depending on the trapping and detrapping processes. Thus passivation of trapping sites by the adsorbed dye is expected to increase the response time which can be expressed as τ L2/D, where L = thickness of the nanocrystalline film. Measurement techniques and construction of a dye-sensitized NIR photon detector will be discussed. 相似文献
227.
Thomas M. F. Case G. S. Bland J. Herring A. D. F. Stirling W. G. Tixier S. Boni P. Ward R. C. C. Wells M. R. Langridge S. 《Hyperfine Interactions》2002,141(1-4):471-476
Hyperfine Interactions - Multilayers of Ce/Fe and U/Fe were fabricated by sputtering and studied by X-ray diffraction and reflectivity, Mössbauer spectroscopy and polarised neutron... 相似文献
228.
D. Shakin 《Journal of Mathematical Sciences》2007,142(4):2302-2366
In this paper, we study the numeric characteristics (the Hilbert function and graded Betti numbers) of monomial ideals in
the polynomial ring and in the exterior algebra.
__________
Translated from Sovremennaya Matematika i Ee Prilozheniya (Contemporary Mathematics and Its Applications), Vol. 30, Algebra,
2005. 相似文献
229.
S. D. Gunapala S. V. Bandara J. K. Liu S. B. Rafol J. M. Mumolo C. A. Shott R. Jones J. Woolaway II J. M. Fastenau A. K. Liu M. Jhabvala K. K. Choi 《Infrared Physics & Technology》2003,44(5-6):411-425
A 9 μm cutoff 640 × 512 pixel hand-held quantum well infrared photodetector (QWIP) camera has been demonstrated with excellent imagery. A noise equivalent differential temperature (NEDT) of 10.6 mK is expected at a 65 K operating temperature with f/2 optics at a 300 K background. This focal plane array has shown background limited performance at a 72 K operating temperature with the same optics and background conditions. In this paper, we discuss the development of this very sensitive long-wavelength infrared camera based on a GaAs/AlGaAs QWIP focal plane array and its performance in quantum efficiency, NEDT, uniformity, and operability. In the second section of this paper, we discuss the first demonstration of a monolithic spatially separated four-band 640 × 512 pixel QWIP focal plane array and its performance. The four spectral bands cover 4–5.5, 8.5–10, 10–12, and 13.5–15 μm spectral regions with 640 × 128 pixels in each band. In the last section, we discuss the array performance of a 640 × 512 pixel broad-band (10–16 μm full-width at half-maximum) QWIP focal plane. 相似文献
230.