A Mössbauer and X-ray investigation of ξ-Fe2N

Mössbauer spectra of ξ-Fe₂N at 4·2°K, 78°K and room temperature are presented. The Mössbauer parameters are compatible with the nitrogen donor model previously found to be applicable to the lower iron nitrides. X-ray analyses of this phase confirm the structure previously reported. Mössbauer and X-ray spectra for partially nitrided iron foils containing γ′, ε and ξ iron nitrides are also discussed.     

Capture cross-section and density of deep gap states in a−SiHx schottky barrier structures

Recombination of charge carriers in a?SiH_x Schottky barriers with density of states near mid-gap ranging from 2.8×10¹⁵?7×10¹⁶cm^-1eV^-1 is attributed to recombination centers with hole capture cross-section of 1.3×10^-15cm².     

On the possibility to create nonthermal solitions in a one dimensional magnetic sine-Gordon system I

The possibility to create nonthermal solitions by switching on an inhomogeneous magnetic field along the direction of a one dimensional magnetic chain is investigated using the inverse scattering method.Project of the Sonderforschungsbereich Frankfurt/Darmstadt, financed by special funds of the Deutsche Forschungsgemeinschaft     

Brownian motion in inhomogeneous media and with interacting particles

Brownian motion in media with a space-dependent temperature and density is described by Langevin equations in phase space. Elimination of the velocity shows that diffusion inx-space cannot in general be characterized by a single diffusion parameter, nor can space-dependence always be accounted for by mere assignment of some sense of stochastic integration to the Langevin equation which has been reduced as in the homogeneous case. Steady solutions of the resulting equations agree with thermodynamics. Interactions between Brownian particles (giving rise to nonlinear Fokker-Planck equations) lead to a generalization of Einstein's relation.Work supported by the Swiss National Science Foundation     

Average field of a relativistic electron in a Landau level

An expression is found for the first correction to the average field produced by a relativistic electron moving in a constant and homogeneous magnetic field. It has electric and magnetic components which do not depend on the time but have a complicated dependence on the distance to the direction axis of the magnetic field. The obtained expressions are analyzed as functions of the distance to the axis and also of the electron state.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 19–22, February, 1981.We thank Professor V. G. Bagrov for his interest in the work and valuable discussions of the results.     

Mechanisms of destruction of the partition foil of an electron gun,and methods of its protection,in the case of streamer breakdown of the discharge gap

In the practical use of electron-beam discharge lasers an important problem is that of their operating reliability. The weakest spot of an EBL is the electron-gun partition foil, and the main cause of its failure is the breakdown of the discharge gap. This paper reports investigations of the mechanisms that destroy the foil and propose for its protection a method that makes it possible to significantly increase the operating reliability of the EBL.Translated from Trudy Ordena Lenina Fizicheskogo Institute Im. P. N. Lebedeva, Vol. 116, pp. 202–208, 1980.     

Application of amorphous silicon field effect transistors in addressable liquid crystal display panels

It is shown that thin-film field effect transistors (FETs) made from amorphous (a-) silicon deposited by the glow-discharge technique have considerable potential as switching elements in addressable liquid crystal display panels. The fabrication of the elements and their characteristics with steady and pulsed applied potentials are discussed in some detail. Two important points are stressed: (i) a-Si device arrays can be produced by well-established photolithographic techniques, and (ii) satisfactory operation at applied voltages below 15VV is possible. Small experimental 7×5 transistor panels have been investigated and it is shown that with the present design up to 250-way multiplexing could be achieved. The reproducibility of FET characteristics is good and in tests so far no change has been observed after more than 10⁹ switching operations.     

Electrical and thermal conductivity of CePd3, YPd3, GdPd3 and some dilute alloys of CePd3 with Y and Gd

Resistivity and thermal conductivity of the intermediate valence compound CePd₃ between 1.3 and 300 K are compared with those of the nonmagnetic and magnetic reference compounds YPd₃ and GdPd₃ and of alloys of the type Ce₁–xRE _x Pd₃ with RE=Y, Gd and 0.01<x<0.5. The analysis reveals the existence of a maximum metallic resistivity of 300 cm for CePd₃. The intrinsic resistivity of CePd₃ rises proportional toT ² up to 100 K, with a coefficientB about 10⁷ times larger than e.g. in copper. We interpret this with indirect electron-electron scattering mediated through valence transitions.     

Production characteristics of the F meson

Inclusive cross sections of η production by e⁺e^- annihilation for c.m. energies between 4.0 and 5.0 GeV are presented. The η production is shown to be correlated with the production of a weakly decaying particle, indicating that its main source is F production. At the 4.42 GeV resonance it is correlated with a low energy photon, suggesting or production. A mass determination of the F is made at 4.42 GeV using the F → ηπ decay channel.