Manufacturing cell formation using similarity coefficients and a parallel genetic TSP algorithm: Formulation and comparison

Many algorithms have been proposed to form manufacturing cells from component routings. However, many of these do not have the capability of solving large problems. We propose a procedure using similarity coefficients and a parallel genetic implementation of a TSP algorithm that is capable of solving large problems of up to 1000 parts and 1000 machines. In addition, we also compare our procedure with many existing procedures using nine well-known problems from the literature.

The results show that the proposed procedure compares well with the existing procedures and should be useful to practitioners and researchers.     

A note on the complex semi‐definite matrix Procrustes problem

This note outlines an algorithm for solving the complex ‘matrix Procrustes problem’. This is a least‐squares approximation over the cone of positive semi‐definite Hermitian matrices, which has a number of applications in the areas of Optimization, Signal Processing and Control. The work generalizes the method of Allwright (SIAM J. Control Optim. 1988; 26 (3):537–556), who obtained a numerical solution to the real‐valued version of the problem. It is shown that, subject to an appropriate rank assumption, the complex problem can be formulated in a real setting using a matrix‐dilation technique, for which the method of Allwright is applicable. However, this transformation results in an over‐parametrization of the problem and, therefore, convergence to the optimal solution is slow. Here, an alternative algorithm is developed for solving the complex problem, which exploits fully the special structure of the dilated matrix. The advantages of the modified algorithm are demonstrated via a numerical example. Copyright © 2007 John Wiley & Sons, Ltd.     

Preparation and crystal structure of Na3SbO(PO4)2

The single phase compound Na₃SbO(PO₄)₂ was prepared by a solid state reaction. It crystallizes in the orthorhombic system, space group P2₁2₁2₁ with a = 6.964(1) Å, b = 9.284(2) Å, c = 12.425(2) Å, Z = 4. The structure was determined from 968 reflections collected on a Nonius CAD4 automatic diffractometer with MoKα radiation. The final R index and weighted R_w index are 0.031 and 0.039, respectively. The structure is built up from strings of corner-sharing SbO₆ octahedra to which phosphate groups are linked by two of their vertices. These chains, running parallel to the a-axis, are separated from each other by sodium atoms.     

A new formula for the saddle-to-scission time

We propose a new formula for the saddle-to-scission time that is more general that the one based on Kramers' approach. Its validity and applicability is then studied in detail. Such a formula is useful for the evaluation of the fission time of very heavy nuclei.     

Langevin description of the charge distribution of fragments originating from the fission of excited nuclei

The charge distribution of fragments originatingfrom the fission of the ²³⁶U compound nucleus is calculated within a stochastic approach based on Langevin equations. The elongation coordinate, the neck-thickness coordinate, and the charge-asymmetry coordinate are chosen as collective variables. The friction parameter of the charge mode is calculated on the basis of two nuclear-viscosity mechanisms, that of one-body and that of two-body dissipation. It is shown that the Langevin approach is applicable to studying isobaric distributions. In addition, the charge distribution in question is studied as a function of the excitation energy of the compound nucleus and as a function of the coefficient of two-body viscosity.     

III-V compound semiconductor (001) surfaces

There has been renewed interest in the structure of III-V compound semiconductor (001) surfaces caused by recent experimental and theoretical findings, which indicate that geometries different from the seemingly well-established dimer models describe the surface ground state for specific preparation conditions. I review briefly the structure information available on the (001) surfaces of GaP, InP, GaAs and InAs. These data are complemented with first-principles total-energy calculations. The calculated surface phase diagrams are used to explain the experimental data and reveal that the stability of specific surface structures depends largely on the relative size of the surface constituents. Several structural models for the Ga-rich GaAs (001)(4×6) surface are discussed, but dismissed on energetic grounds. I discuss in some detail the electronic properties of the recently proposed cation-rich GaAs (001)ζ(4×2) geometry. Received: 18 May 2001 / Revised version: 23 July 2001 / Published online: 3 April 2002