加热炉内板坯粘塑性下桡变形的研究

在加热妒内，由于高温及重力作用，板坯两端的悬臂将产生下桡变形。悬臂越长，下桡将越大，导致悬臂下桡部分与出口端墙相碰，影响出料而造成事故。本文对加热炉内板坯的下桡变形进行了分析计算。首先，建立了板坯的二维非稳态导热模型并用有限差分法计算了炉内板坯随时间的温度变化；然后建立了板坯悬臂粘塑性变形模型，用有限元法计算了高温条件下由重力引起的悬臂的下桡变形。由此理论模型计算出的板坯抽出温度与悬臂端下桡量与实测结果吻合良好，说明该理论模型及模型计算方法是正确的，可用于对装钢生产进行指导。     

Excitons in coupled quantum dots

Properties of excitons in vertically coupled GaAs/AlGaAs quantum dots were investigated using the variational method within the envelope function and effective mass approximations. It was found that when the thickness of the spacer layer becomes less than about one exciton Bohr radius, both the exciton binding energy and the fundamental optical transition energy are reduced compared to those in isolated quantum dots. This is a result of increased space extension of exciton due to the penetration of carrier wave functions into the spacer layer and corresponding reduction in confinement energy which dominates over the Coulomb interaction between the electron and the hole.     

绿色荧光粉YAGG∶Tb,Gd用于FED的尝试

FED器件的发展迫切需要具有化学和热稳定性 ,高亮度 ,长寿命的新型荧光材料。本文合成了Gd3 +离子共掺杂的YAGG∶Tb获得了YAGG∶Tb ,Gd ,并将其用于 0～ 30 0 0V低压范围 ,对其在不同电压和电流密度下的发光特性进行了测试。结果表明 ,该种材料特性优于ZnO∶Zn并且不存在电压与电流饱和     

Covalent functionalization of multi-walled carbon nanotubes by lipase

Lipase from Candida rugosa was covalently anchored onto acid-treated multi-walled carbon nanotubes (MWNTs) through a self-catalytic mechanism. A variety of characterization techniques including FTIR, Raman spectroscopy, and XPS were employed to demonstrate the formation of the ester linkage between lipase and MWNTs. The MWNTs-lipase biocomposites showed significantly increased solubility in some common-used organic solvents, such as THF, DMF and chloroform. This study may offer a novel and facile route for covalent modification of carbon nanotubes, and expand the potential utilization of both lipases and MWNTs in the fields of biocatalyst and biosensor.     

Sobolev空间H~s(R~n)上矩阵伸缩的多尺度分析特征刻画

本文对高维Sobolev空间Hs(Rn)上具有矩阵伸缩的多尺度分析特征进行了 刻划,特别给出了稠密性特征的一个充分必要条件,从而解决了文献[4]中提出的一个 问题.所得结果覆盖了这方面的已知结论.     

Average Atom Model in Hot Plasmas

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Ga1-xInxAs/InAsyP1-y/InP异质结的MOCVD生长及表征

Ga1-xInxAs(x>0.53)材料是未来长距离低损耗光纤通信的理想光源材料和探测器材料之一.我们采用水平常压MOCVD系统,在InP衬底上成功地生长了Ga1-xInxAs(x>0.53)/InAsyP1-y/Inp异质结材料.其中InAs1-yPy为组份阶梯变化的多层结构.由样品的(400)面X光衍射结果测定了各层组份.由二次离子质谱(SIMS)得到了样品剖面组份变化结果,证明InAs1-yPy层组份为阶梯状变化的.通过对光致发光结果和X光衍射结果比较,可以看到,InAsyP1-y层通过位错和弹性畸变二种方式来释放或积累Ga1-xInxAs与InP间的失配应力,从而减少了Ga1-xInxAs中的失配位错.有效地改善了Ga1-xInxAs的质量.已获得了x高达0.94表面光亮的Ga1-xInxAs/InAs1-yPy/InP异质结材料.