基于微机电系统技术的高性能集成型微富集器（英文）

由于大部分环境样品的浓度非常低,为了实现其直接检测,提出将一种集成化的微型富集器应用到色谱系统中。富集器可实现色谱系统的进样与样品富集,能将色谱仪的检测限提高1~2个数量级。设计的富集器采用了高容量4平行通道结构,沟道内填充了高吸附率的Tenax-TA吸附材料,来实现对环境样品中挥发性有机化合物组分的富集。此外,为了密闭热解吸过程中所释放的组分,在微型富集器后集成了微型阀。试验结果表明,研制的微型富集器取得了15倍以上的富集因子。而且,通过微阀的控制,色谱峰的拖尾和峰展宽得到了有效的控制。因此,该微型富集器可广泛应用到环境样品的快速检测中,提高各检测器对复杂环境的适应能力。     

同步辐射的相干模式

在分析了光源相干相体积的基础上，重点研讨了第三代同步辐射中波荡器（ｕｎｄｕｌａｔｏｒ）辐射的相干模式，能谱亮度，相干光子通量等，这对提高光束线相干能量的传输效率和软Ｘ光相干学束线的设计具有重要意义。     

Fano effect of a parallel-coupled triple Rashba quantum dot system

Using the nonequilibrium Keldysh Green's function technique, the Fano effect of a parallel-coupled triple Rashba quantum dot system is investigated. The conductance as a function of electron energy is numerically calculated. Compared with the case of a parallel-coupled double quantum dot system, two additional Fano resonance peaks occur in the conductance spectrum. By adjusting the structural parameters, the two Fano resonance peaks may change into the resonance peaks. In addition, the influence of Rashba spin-orbit interaction on the conductance is studied.     

880 nm laser-diode end-pumped Nd:YVO<Subscript>4</Subscript> slab laser at 1342 nm

43.6 W near-diffraction-limited continuous-wave laser beam at 1342 nm in 880 nm laser-diode partially end-pumped Nd:YVO₄ slab laser is presented. The slope efficiency and optical-to-optical efficiency with respect to absorbed pumping power were 45.4% and 35.9%, respectively. At output power of 34.5 W, the M ² factors in unstable and stable directions were 1.3 and 1.2, respectively.     

Investigation on push-pull polymer Mach-Zehnder interferometer electro-optic switches using improved 3-D mode propagation analysis method

By introducing normalized mode excitation coefficient and total mode excitation coefficient, we improve the 3-D mode propagation analysis (MPA) method for convenient design and analysis of multimode interference (MMI) coupler. With the improved 3-D MPA method and point-matching method, we present a novel formulation technique to analyze the low- and high-frequency characteristics for the impedance-matched polymer Mach-Zehnder interferometer electro-optic (EO) switch based on MMI couplers. As an application, under 1550 nm, optimization and simulation performed for the designed device reveal low driving voltage of 1.375 V with short EO region length of 5 mm. The insertion loss and extinction ratio are less than 3.75 dB and more than 42 dB, respectively. The microwave characteristic impedance is about 49.6 Ω, and due to the less mismatch between lightwave velocity and microwave velocity, the estimated cutoff switching frequency is up to 263 GHz with the 10–90% rise time and fall time about 1.90 ps under the operation of step-style square-wave switching signal. This theoretical cutoff switching frequency is almost 1.53 times of that of our previous reported shielded EO switch with similar design technique.     

曲率半径误差对平场全息凹面光栅分辨率的影响及其补偿方法

在平场凹面全息光栅的没计制作中,不可避免的存在曲率半径误差,严重影响光栅光谱仪的分辨率.为了从理论上分析并指导光谱仪器的设计和装调,运用几何光线追迹方法计算并分析了不同曲率半径误差下光谱像宽度的变化规律,发现在一个较大的误差范围内子午焦线的位置随着曲率半径的变化前后平移,同时其弯曲程度几乎没有改变.数值计算发现通过调整像面位置或人臂长度均能够补偿曲率半径的误差.数值模拟结果显示,修正使用结构后的光栅能够达到与设计结果相近的成像质量.     

非等电子Sb替换Cu和Te后黄铜矿结构半导体Cu_3Ga_5Te_9的热电性能

热电材料是一类能够实现热与电相互转换的功能材料,在制冷和发电领域极具应用潜力.本文采用金属Sb元素非等电子替换Cu3Ga5Te9化学式中的Cu和Te,观察到材料Seebeck系数和电导率提升的现象.这些电学性能的改善与载流子浓度和有效质量的增大及迁移率基本维持不变有关.载流子浓度的提高是由于Sb原子占位在Te晶格位置后费米能级进入到价带所产生的空穴掺杂效应所致,同时也与Cu含量减少后铜空位(V-1Cu)浓度增大相关联.另外,非等电子替换后,阴离子(Te2-)移位导致了晶格结构缺陷参数u和η的改变,其改变量fiu和fiη与材料晶格热导率(κL)的变化密切相关.在766 K时,适量的Sb替换量使材料的最大热电优值(ZT)达到0.6,比Cu3Ga5Te9提高了近25%.因此,通过选择替换元素、被替换元素及替换量有效地调控了材料的电学及热学性能,在黄铜矿结构半导体中实现了非等电子元素替换改善热电性能的思想.     

在溴代十六烷基吡啶存在下5-Br-PADAP分光光度法测定水中微量铁的研究

研究了显色剂2-(5-溴-2-吡啶偶氮)-5-二乙氨基酚(简称为5-Br-PADAP)与铁(Ⅱ)显色反应条件,在pH=6.0的醋酸-醋酸钠缓冲体系中,采用阳离子表面活性剂溴代十六烷基吡啶增溶增敏。铁(Ⅱ)与显色剂形成的配合物组成为Fe(Ⅱ)∶R=1∶2,络合物具有两个吸收峰,分别位于λ1=556nm与λ2=748nm。选择748nm进行测定,其摩尔吸光系数为ε748=3.3×104L·mol-1·cm-1。铁含量在0—30μg/25mL范围内服从比耳定律。此法用于水样中微量铁的测定,结果准确可靠。     

93.7 W 1112 nm diode-side-pumped CW Nd:YAG laser

We demonstrate a high power continuous wave (CW) infrared laser operated at 1112 nm from a diode side-pumped Nd:YAG crystal with a plano-plano symmetrical resonator. By inserting an etalon, an output power of as high as 93.7 W at 1112 nm was obtained at the pump power of 570 W with conversion efficiency of 16.4%. The beam quality factor of M² was measured to be about 17. The wavelength tunable performance of the etalon was also analyzed. To the best of our knowledge, it is the highest output power at 1112 nm CW laser based on Nd:YAG crystal.     

Directional terahertz radiation through groove-assisted hole array

The authors theoretically demonstrate the terahertz beam shaping with metallic subwavelength holes array surrounded by concentric periodic grooves. High transmission and directional radiation can be obtained simultaneously for the resonant excitation of the surface wave in the combined structure. Finite-difference time-domain simulation results shows that the transmission mainly depends on the lattice constant of hole array and the features of incident surface around it, while the far-field angle distribution is dominated by the details of the output surface. This compact beam shaping structure is hoped to serve as a basic device for future terahertz systems.