Effect of hydrogen on the photoelectronic properties of GaAs/InGaAs quantum-well heterostructures with an island palladium layer on the surface

The effect of hydrogen on the photoluminescence and planar conductivity of GaAs/InGaAs quantum-well heterostructures with an island Pd layer at the anodically oxidized surface was studied. Unlike continuous deposited Pd layers, island layers do not cause the formation of defects in the GaAs surface region and yet the Pd layer maintains high catalytic activity with respect to hydrogen. It is found that the thermal treatment of such a structure in a hydrogen atmosphere causes atomic-hydrogen passivation of the defects in quantum wells. Studies of the characteristics of planar photoresistors with an island Pd layer acting as hydrogen sensors show that their hydrogen detectivity is approximately two orders of magnitude higher than that of diode structures with continuous Pd layers.     

Fundamental processes in long air gap discharges

The development of atmospheric lightning is initiated and sustained by the formation in virgin air of ‘streamer corona’ and ‘leader’ discharges, very similar to those observed in laboratory long sparks. Therefore, the experimental and theoretical investigations of these laboratory discharges have become of large interest to improve the physical knowledge of the lightning process and to develop self-consistent models that could be applied to new protection concepts.In the present paper the fundamental processes of the subsequent phases of long air gap discharges are analyzed, from the first corona inception and development to the leader channel formation and propagation. For all these processes simulations models are discussed that have been essentially derived and simplified by the authors, in order to develop sequential time-dependent simulation of the laboratory breakdown, with both positive and negative voltages. The possibility of extending these models to the case of natural lightning is discussed in the companion paper, presented in this same volume. To cite this article: I. Gallimberti et al., C. R. Physique 3 (2002) 1335–1359.     

Automatic error correction in inflected languages

Systems for automatic detection and correction of spelling errors in natural language texts are considered. The development of such systems for both English and Russian (and for inflected languages in general, including all Slavic languages) is discussed. An approach associated with morphological analysis of the wordforms in the given text is described. The topics considered in the paper include the main methods of automatic spelling correction, levels of automation of the spelling error correction process, the effect of the type of computer used, the use of spelling error correctors in a stand-alone mode and in combination with word-processing software, and the maintenance of auxiliary dictionaries.Translated from Itogi Nauki i Tekhniki, Seriya Teoriya Veroyatnostei, Matematicheskaya Statistika, Teoreticheskaya Kibernetika, Vol. 28, pp. 111–139, 1988.     

Analysis of the stress-strain state of a ring-reinforced cylindrical section of an underground pipe

A method is presented for solving the problem of determining the stress-strain state of closed circular cylindrical shells in an elastic medium. The problem relates to the design of underground pipelines. The work of cylindrical shells is examined from the viewpoint of the theory of thin-walled three-dimensional systems, with allowance being made for the unilateral character of the interaction with the elastic medium. The stress-strain state of a cylindrical section of an underground pipe reinforced in the middle by a ring is investigated. It is shown that different factors influence the stress-strain state of the shell of the pipe.Translated from Teoreticheskaya i Prikladnaya Mekhanika, No. 18, pp. 66–72, 1987.     

Study of formation mechanism of 1,3-benzodioxanes from tertiary phenoloalcohols and carbonyl compounds using labeled atoms

It was shown that the reaction of o-hyroxyphenyldiphenylmethanol with benzaldehyde labeled with ¹⁷O and ¹⁸O isotopes proceeds in such a way that oxygen atoms of the starting phenoloalcohol are retained.Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 5, pp. 632–633, May, 1991.     

Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system

Multi-quantum well heterostructures (MQWHs) of the novel Ga(NAsP)/GaP material system have been grown, pseudomorphically strained to GaP-substrate. The crystalline perfection is verified by transmission electron microscopy (TEM). For As-concentrations in excess of about 70%, a direct band structure and adequate luminescence efficiency for laser device application is observed. Temperature-dependent photoluminescence (PL) investigations show the influence of carrier localisation and non-radiative recombination processes typical for dilute nitride materials. With rising N content in the active material, the emission wavelength shifts towards longer wavelength, leading to Ga(NAs)/GaP MQW structures with photon energies below the indirect band gap of silicon (Si). At the same time the luminescence intensity drops due to an increase in non-radiative carrier traps and/or structural degradation.     

Behavior of Aluminum in Its Electric-Spark Dispersion in Aqueous Solutions of Some Acids

The influence exerted by the nature and concentration of a number of organic and mineral acids on the composition of products formed in electric-spark dispersion of aluminum was studied.     

Calculating Density of Molecular Liquids Using Agrawal-Thodos Equation

The correlation between the parameters of the Agrawal-Thodos equation, the fundamentalconstants of a substance are established. A modified equation is proposed, in which the minimum set of easily measurable properties of the substance is used as input data.     

Contact Interaction of Two Elastic Wedges

We consider the problem of contact of two elastic wedges and assume that only the vertices of the wedges touch before loading. After loading, the edges of both wedges come in contact near their common vertex. We reduce the constructed system of dual integral equations to a Fredholm integral equation of the second kind with difference kernel given on the semiaxis. We analytically solve the Fredholm equation by reducing it to the boundary-value Riemann problem for analytic functions. We obtain an analytic expression for contact stresses.