Mehrfachbindungen zwischen Hauptgruppenelementen und Übergangsmetallen : XLIV. Synthesen von Hydrogensulfido- und Hydrogenselenido-Komplexen der Metalle Chrom, Molybdän und Wolfram

Hydrogenchalcogenido complexes of general composition (η⁵-C₅R₅)(CO)₃M(EH) (R = H, CH₃; M = Cr, Mo, W; E = S, Se) can be obtained by three different routes, sometimes in quite good yields. Thus, the sulfur and selenium derivatives can be synthesized by insertion of the respective elements into the metal-hydrogen bonds of the precursor compounds (η⁵-C₅R₅)(CO)₃MH. This species also reacts with potassium selenocyanate to yield the hydrogenselenido derivatives (η⁵-C₅R₅)(CO)₃M(SeH) which can also be obtained by treatment of the methyl complexes (η⁵-C₅R₅)(CO)₃M(CH₃ (M = Mo, W) with HBF₄ and Li[SeH]. The corresponding hydrogentellurido compounds are probably formed by these preparative methods but appear to be quickly converted into either the dinuclear tellurium bridge products (μ-Te)[(η⁵-C₅R₅)(CO)₃M]₂ (M = Mo) or into the hydrido complexes (η⁵-C₅R₅)(CO)₃MH (M= Mo, W) by release of elemental tellurium.     

Influence of internal degrees of freedom on the structure of one-dimensional systems

Summary The influence of internal degrees of freedom on the behaviour of one-dimensional systems is discussed. For systems with half-filled bands the coupling to internalviz. lattice coordinates decides whether Peierls distortion is caused by intramonomer coordinates or by a lattice coordinate. Thereby the various intramonomer degrees of freedom act cooperatively. We show that there is a small regime of parameters where both kinds of distortion exist simultaneously. For increasing temperature we find that distortions can also move from the lattice coordinate to the intramonomer coordinate.     

Laser vaporization: A versatile method for studying metal clusters

Vaporizing solid samples of metals and semiconductors with a YAG Laser is a method well suited for producing molecules and clusters of those materials. The clusters are examined by either laser-induced fluorescence (LIF) or mass spectroscopic methods. The technique is valuable for both gas phase and matrix studies. The method is described and some applications, studying either the structure of small metal molecules or their reactions, are reviewed, with emphasis on our recent results from the LIF studies of LiBe, Al₂ and the reaction of Al with oxygen, yielding A1₂O. For larger clusters, Ion Cyclotron Resonance is an extremely valuable method, as we demonstrate by its application to the reactions of small charged silicon clusters with strong oxidising agents.     

Effects of a controlled N2 and O2 addition to Ar on the analytical parameters of the GD-OES

The influence of the controlled addition of N₂ and of O₂ to Ar on the analytical parameters of a dc glow discharge has been investigated for bulk samples of the pure metals Al, Ti, Fe, Ni, Cu, and Ag. The constant voltage discharge mode at 1000 V was applied with a mean power of about 1 W/mm². The N₂ and O₂ concentrations in the discharge gas Ar were varied in the range 0–3 mass-%, corresponding to a partial pressure of about 4 · 10^?3 hPa. The general effect of the gaseous addition is the decrease of the sputtering rate with an increasing concentration of N₂ or O₂. Atomic processes, which might be responsible for the observed effects, are discussed.     

Zur Synthese und Struktur von K3N

Synthesis and Structure of K₃N Two phases in the binary system K/N have been obtained via co‐deposition of potassium and nitrogen onto polished sapphire at 77 K and subsequent heating to room temperature. The powder diffraction pattern of one of these phases can be satisfactorily interpreted by assuming the composition K₃N, and the anti‐TiI₃ structure‐type, which is also adopted by Cs₃O. The resulting hexagonal lattice constants are: a = 779.8(2), c = 759.2(9) pm, Z = 2, P6₃/mcm. Comparison with possible structures of K₃N generated by computational methods and refined at Hartree‐Fock‐ and DFT level, reveals that the energetically most favoured structure has not formed (presumable Li₃P‐type), but instead one of those with very low density. In this respect, the findings for K₃N are analogous to the results on Na₃N. The thermal evolution of the deposited starting mixture has been investigated. Hexagonal K₃N transforms to another K/N phase at 233 K. Its XRD can be fully indexed resulting in an orthorhombic cell a = 1163, b = 596, c = 718 pm. Decomposition leaving elemental potassium as the only residue occurs at 263 K.     

Literatur

Ohne Zusammenfassung     

Quantitative measurements of Ge surface segregation during SiGe alloy growth

Ge segregation during the growth of Si_{1 − x}Ge_x alloys (x = 5, 10, 20, and 40%) was studied using X-ray photoelectron spectroscopy. The alloys were grown in thicknesses up to 20.0 nm at 500°C to measure quantitatively the amount of segregated surface Ge. The length of alloy needed to reach steady-state growth edge was found to decrease with increasing alloy concentration (4.8, 2.8, 2.4, and 2.0 nm, respectively). It was found that each alloy had a complete monolayer of Ge on the surface and an increasing amount of segregated Ge in the second layer (20, 55, 80, and 95%, respectively) during steady-state growth. An increase in the temperature of alloy growth (400–750°C) resulted in an increase in the leading edge of alloy growth but did not change the amount of segregated Ge during steady-state growth. We propose that film stress is responsible for the amount of Ge segregation.