一类齐次对称多项式上的切比雪夫不等式

本文借助于控制不等式及数学归纳法，将著名的切比雪夫不等式推广到m次一般齐次对称多项式上(如文中定理及引理7)，并将此结果用于对称平均等．旨在展示证明解析不等式的一些有效的方法和技巧，同时为数学研究特别是高维几何研究提供一些新的有趣而有用的解析不等式．     

Increasing the RF energy per pulse of an RKO

The Air Force Research Laboratory RKO source has recently demonstrated the ability to convert electron beam power to RF power until the termination of the electron beam pulse, achieving a power of 1.5 GW at an energy of 170 J. These results represent an increase in power of 25-30% in power and energy extracted from this source. This paper discusses the principal research areas encountered in lengthening the RF pulse (FWHM) from 50 ns to the present 120 ns and the associated increase in the RF energy     

Double Molecular Encapsulation of Tetrahydrofuran by an Amphiphilic Calix-[4]-arene

The crystal structure of para-octanoylcalix-[4]-arene·2 tetrahydrofuran complex reveals double inclusion of the guest molecules, one deep in the aromatic cavity and the other held in a four-fingered molecular hand formed by the aliphatic chains, the inclusion changes the molecular packing from a bilayer system in the absence of guest, to a head-to-tail antiparallel chain packing.     

A chemistry home page on the World Wide Web

In this article a brief overview of the World Wide Web (WWW) is given, with some examples of the kind of information and services pertaining to analytical chemistry that can be found there. An existing WWW site that has been set up for analytical chemists is used as a case in point. The article concludes with a brief look at some of the issues raised by publishing on the Internet. Received:15 January 1996 / Accepted: 28 January 1996     

Multiple quantum well mixing and index-guided quantum well heterostructure lasers by MeV ion implantation

In recent years considerable interest has been shown in impurity-induced compositional disordering of III–V compound semiconductor devices, especially in efforts directed towards fabricating index-guided buried heterostructure lasers and other unique photonic and electronic devices. In this work we describe the study of compositional disordering induced by MeV implantation of oxygen and krypton into AlAs-GaAs superlattices and the fabrication of index-guided quantum well heterostructure lasers by MeV oxygen ion implantation.     

High pressure experiments on AlxGa1−xAs-GaAs quantum-well heterostructure lasers

Hydrostatic pressure experiments on Al_xGa_1?xAsGaAs quantum-well heterostructure (QWH) laser diodes are described. Data are presented giving ～11.5meV/kbar for the bandgap vs. pressure coefficient at lower pressures, with a change to 8.5–9meV/kbar at higher pressures. We suggest that this behavior is caused by biaxial and shear stresses in the active region induced by doping or composition mismatch relative to the confining layers, or between the n and p confining layers themselves. A model consistent with the experimental data is presented.