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Transonic trailing-edge flow 总被引:1,自引:0,他引:1
Bodonyi RJ; Kluwick A 《The Quarterly Journal of Mechanics and Applied Mathematics》1998,51(2):297-310
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The structural and electronic transport properties of La1−x
Ce
x
MnO3 (x=0.0–1.0) have been studied. All the samples exhibit orthorhombic crystal symmetry and the unit cell volume decreases with
Ce doping. They also make a metal-insulator transition (MIT) and transition temperature increases with increase in Ce concentration
up to 50% doping. The system La0.5Ce0.5MnO3 also exhibits MIT instead of charge-ordered state as observed in the hole doped systems of the same composition. 相似文献
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LeClair P Swagten HJ Kohlhepp JT van De Veerdonk RJ de Jonge WJ 《Physical review letters》2000,84(13):2933-2936
Co/Al2O3/Co magnetic tunnel junctions with an interfacial Cu layer have been investigated with in situ growth characterization and ex situ magnetotransport measurements. Cu interlayers grown on Co give an approximately exponential decay of the tunneling magnetoresistance with xi approximately 0.26 nm while those grown on Al2O3 have a decay length of 0.70 nm. The difference in decay lengths can be explained by different growth morphologies, and in this way clarifies a present disagreement in the literature. For monolayer coverage of Cu, we show that the tunneling spin polarization is suppressed by at least a factor of 2 compared to Co and beyond approximately 5 ML it becomes vanishingly small. 相似文献