Investigation of gain and hyperfine splitting in the niobium X-ray laser

Neon-like niobium X-ray lasers have been studied using both slab and thin-foil target geometries. Niobium foils of various lengths were irradiated from both sides with two beams of the frequency-doubled Nova laser system using a line focus. We looked for gain by measuring spectrally integrated line intensities at different plasma lengths. Gain was observed in four neon-like niobium lines corresponding to 3s–3p transitions. The line profile of theJ = 0–1 line ( = 145.9 ) shows splitting due to the hyperfine effect. Improved contrast in the hyperfine structure is observed as the plasma length is increased. Hyperfine splitting may be relevant to other 3s–3p transitions in neon-like niobium as well as other neon-like X-ray laser systems.     

Interdiffusion studies in Bi-based layered systems with nanosecond laser pulses

Interdiffusion processes are induced by nanosecond laser pulses from an excimer laser. The Bi-based systems studied are formed by a Bi layer and a Sb or Ge layer. Configurations with Bi at the surface layer or at the innermost layer are both studied. Real-time reflectivity measurements are performed during the irradiation to determine the process kinetics and times and Rutherford backscattering spectrometry is used to obtain the concentration depth profiles. It will be shown that there is an interfacially initiated diffusion process in the Bi-Sb system and that the diffusion coefficients of this system within the liquid phase are in the 10^–5–10^–6 cm²/s range. The Bi-Ge system shows instead little mixing, the diffusion coefficients of the system within the liquid phase being at least two orders of magnitude lower. The differences observed when Bi is the surface layer or the innermost one are related to the different thermal responses of the system.     

Anisotropic<Emphasis Type="Italic">s</Emphasis>-wave or<Emphasis Type="Italic">d</Emphasis>-wave pairing? Analysis of experiments on ion irradiation of YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7-x</Subscript> films

The effect of ion irradiation on the superconducting transition temperatureT _c and resistivityρ _ab (T) of YBa₂Cu₃O_7-x films with different oxygen content (initial temperatureT _c0≈90 K and 60 K) is studied experimentally. The dependenciesT _c /T _c0 on residual resistivityρ _o are obtained in very wide range 0.2<T _c /T _c0 <1 andρ _o μΩ·cm. The critical values ofρ _o , corresponding to the vanishing of superconductivity, are found to be an order of magnitude larger then those predicted by theory ford-wave pairing. At 0.5÷0.6<T _c /T _c0<1 the experimental data are in close agreement with theoretical dependencies, obtained for the anisotropics-wave superconductor within the BCS-framework.     

Investigations of the interlayer coupling in high-<Emphasis Type="Italic">T</Emphasis><Subscript><Emphasis Type="Italic">c</Emphasis></Subscript> cuprates

Low-field magnetizationM(H) measurements can be used to probe the nature of the screening currents and the interlayer coupling in high-T _c cuprates. Here we compare theM(H) behaviour of single crystals of Bi₂Sr₂CaCu₂O₈ and fully oxygenated and oxygen reduced YBa₂Cu₃O_7??. In YBa₂Cu₃O₇, theM(H) behaviour is consistent with anisotropic 3D superconductivity whilst in Bi₂Sr₂CaCu₂O₈, the surface screening currents are strongly affected by the presence of vortices, implying that the CuO₂ planes are coupled via a weak Josephson interaction. In oxygen-deficient YBa₂Cu₃O_6.7 (T _c =63K), theM(H) behaviour at low temperatures is similar to that found for Bi₂Sr₂CaCu₂O₈, implying that the removal of oxygen from the chains has resulted in a dimensional crossover of the superconducting state in YBa₂Cu₃O_7??. As the temperature approachesT _c , the 3D behaviour is eventually restored as thec-axis coherence length ξ _c becomes comparable with the interlayer spacingd.     

Transport studies in boron-ion implanted type II<Emphasis Type="Italic">a</Emphasis> diamond

We have investigated low-temperature electrical transport mechanisms in the surface layer of a type IIa diamond which has been heavily implanted with boron-ions at low temperatures and then annealed at high temperatures. The boron atoms occupy substitutional sites giving rise to a heavily doped wide-bandgap semiconductor. The dc-conductivity results suggest that for the maximum boron doping that has been achieved, the diamond sample is close to the insulator-metal transition. A model to account for the observed increase in activated boron centres with ion dose is presented. On the insulating side of the transition, the data are interpreted in terms of variable-range hopping laws.     

Magnetic structure of graphite ribbon

Anoble mechanism of spin polarization is proposed for finite graphite sheet with edge. For graphite ribbon with zigzag edge, there appear peculiar ‘edge states’. These localized states comprise nearly flat band at the Fermi level, which easily causes magnetic instability. Magnetic structure is suggested from Hartree-Fock analysis of the Hubbard model, where huge magnetic moments are induced at around both of edges by weak HubbardU and are coupled antiferromagnetically with each other.