马氏定律与哈勃定律的辨析

本文从理论,实验上论证了“马氏（红移）定律”,同时指出所谓“退行速度Vr”或“星系红移”与“星系间的距离”无必须的关系,从这个意义上来说,哈勃定律是错误的。     

多通道CCD摄像机的数据采集和图像显示

针对多通道CCD摄像机 ,提出了一种多线程数据实时存储的方法。利用多线程提高硬盘读写速度 ,实现高速、大容量CCD摄像机数据的硬盘实时存储 ,并利用定时中断将多通道信号定时分块存储入硬盘 ,存储的CCD摄像机数据被转换为图像文件加以显示。系统的CCD摄像机通道达到 5个 ,每个通道的数据率达到 10MBit/s。通过实验 ,验证了该方法的正确性和有效性     

镧与真空沉积银纳米粒子的金属间化合

根据HumeRothery规则,分析了银与镧两元素之间形成金属间化合物的倾向性,并根据真空蒸发沉积的条件,分析了在真空蒸发沉积情况下镧与银之间形成金属间化合物的可能性.用X射线光电子能谱化学位移方法对真空蒸发沉积的银、镧薄膜进行了分析,结果表明在真空沉积条件下镧与银之间的确形成了金属间化合物. 关键词： 金属间化合物 镧 银 纳米粒子     

新颖的PPLN电光开关

在分析基于级联二阶非线性效应的准相位匹配周期极化铌酸锂(PPLN)波导全光波长变换器的有关参量容限的基础上,提出PPLN波长变换器的电光调控设想,并给予简要论证,论证结果是可行的,从而可实施电控调谐来自动补偿其失配,进而也可实现光开关的功能 关键词： 准相位匹配 周期极化铌酸锂 波长变换 光开关 电光效应调控     

准位相匹配铌酸锂波导倍频特性分析与优化设计

用标量有限元方法计算了周期性极化的铌酸锂光波导中模折射率和模场分布,并在计算中引入铌酸锂晶体折射率与温度变化的关系,分析了准位相匹配铌酸锂波导倍频效率与极化反转光栅周期、基频光波长、波导器件温度等关系.理论分析与实验结果符合得很好.在此基础上,分析了波导制作参数与倍频效率、光栅周期与晶体温度,以及温度带宽与光栅通光方向长度等关系,进而对铌酸锂波导倍频器件进行优化设计. 关键词： 铌酸锂 光波导 准位相匹配 有限元     

带隙法测定SiGe/Si材料的应变状态

从固体模型理论的结果出发，计算了生长于Si（100）衬底上x值小于085的Si_1-xGe_x合金材料（能带结构为类Si结构）的间接带隙与应变的关系，结 果表明，应变的S iGe材料的带隙和完全弛豫状态下材料的带隙之差与应变呈线性关系.基于这一结果，提出了 用测量带隙来间接测定SiGe/Si应变状态的方法.用带隙法和x射线双晶衍射法测量了不同应 变状态下的SiGe/Si多量子阱材料的应变弛豫度，两者可以较好的符合，表明带隙法测量SiG e应变弛豫度是可行的. 关键词： SiGe合金 应变 带隙     

晶场二级效应与交换作用对PrF3晶体磁性及磁光性质的影响

研究了晶场二级效应在PrF₃晶体中的作用，发现该效应可使Pr³⁺离子的晶场单态与其他态混合，对PrF₃晶体磁化率产生明显影响.进一步研究了晶体内的交换作用有效场，其形式为H_in=(1.9-0.02556T)×10^-5M，在100—300 K的温度范围内，以此计算的PrF₃晶体的倒数磁化率和Verdet常数的倒数与实验值符合较好.结果表明，在PrF₃晶体中，晶场二级效应与离子间的交换作用都不能忽略. 关键词： 晶场二级效应 交换作用有效场 Verdet常数 3晶体')" href="#">PrF₃晶体     

Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor using a micro-Raman technique

Self-heating in a multifinger AlGaN/GaN high electron mobility transistor (HEMT) is investigated by micro-Raman spectroscopy. The device temperature is probed on the die as a function of applied bias. The operating temperature of the AlGaN/GaN HEMT is estimated from the calibration curve of a passively heated AlGaN/GaN structure. A linear increase of junction temperature is observed when direct current dissipated power is increased. When the power dissipation is 12.75 W at a drain voltage of 15 V, a peak temperature of 69.1°C is observed at the gate edge on the drain side of the central finger. The position of the highest temperature corresponds to the high-field region at the gate edge.     

Compact temperature-insensitive modulator based on a silicon microring assistant Mach-Zehnder interferometer

<正>On the silicon-on-insulator platform,an ultra compact temperature-insensitive modulator based on a cascaded microring assistant Mach-Zehnder interferometer is proposed and demonstrated with numerical simulation.According to the calculated results,the tolerated variation of ambient temperature can be as high as 134℃while the footprint of such a silicon modulator is only 340μm~2.     

The influence of polytetrafluorethylene reduction on the capacity loss of the carbon anode for lithium ion batteries

To date, the lithium ion battery has become the focus of secondary battery studies. A considerable capacity loss during the first lithiation of its carbon electrode is a severe drawback of this kind of battery. It has been suggested frequently that the capacity loss was caused by the decomposition of the electrolyte on the surface of the carbon electrode. However, the contribution of binder reduction to this capacity loss has never been considered until now. This paper deals with the binder polytetrafluorethylene (PTFE) reduction and finds that it plays an important part in the capacity loss. It is found that (1) the capacity loss increased with increasing PTFE binder content, (2) the X-ray diffraction peaks corresponding to the PTFE, binder became weaker, while more of the lithium was consumed by the carbon electrode, and disappeared when the consumed amount of lithium exceeded the theoretical value of 1070 mAh per gram of PTFE and (3) the height of the high voltage plateau of the electrochemical titration curves was just a function of storage time, and the length of the plateau was a function of the PTFE content.