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101.
Akimoto H Xia JS Candela D Mullin WJ Adams ED Sullivan NS 《Physical review letters》2007,99(9):095301
The viscosity is measured for a Fermi liquid, a dilute 3He-4He mixture, under extremely high magnetic field/temperature conditions (Bor=1.5 mK). The spin-splitting energy microB is substantially greater than the Fermi energy kBTF; as a consequence the polarization tends to unity and s-wave quasiparticle scattering is suppressed for T相似文献
102.
Peng Wang Xia Wang Youming Chen Guangan Zhang Junyan Zhang 《Applied Surface Science》2007,253(7):3722-3726
Ti-doped hydrogenated diamond-like carbon (DLC) films were deposited on Si(1 0 0) substrates by a filtered cathodic vacuum arc (FCVA) method using Ar and CH4 as the feedstock. The composition and microstructure of the films were investigated by Raman spectroscopy, X-ray photoelectron spectroscopy and IR spectroscopy. The internal stress was determined by the radius of curvature technique. The influence of the bias voltage on the microstructure of the as-deposited films was investigated. It was found that the graphite-like bonds was dominated in the Ti-doped DLC film deposited at 0 V bias voltage. When bias voltage was increased to −150 V, more diamond-like bond were produced and the sp3 content in film reached the maximum value, after which it decreased and more graphite-like bonds feature produced with further increase of the negative bias voltage. The compressive internal in the Ti-doped DLC films also exhibited a maximum value at −150 V bias voltage. IR results indicated that CH bonded intensity reduced, and H atoms bonded with C atoms were substituted for the Ti atoms as the negative bias voltage increasing. All the composition and microstructure change can be explained by considering the plasma conditions and the effect of negative bias voltage applied to the substrate. 相似文献
103.
The critical behavior of passive mode locking has been demonstrated in a figure-eight fiber laser that performs rational harmonic mode locking (RHML). On both the repetition rate and the pulse amplitude distribution, the observed pulse trains near the threshold exhibit the same regulations as the rational harmonic mode-locked ones. The theory also shows that there should be a middle status of RHML before achieving normal mode locking. It is important to note that the results provide what we believe to be the first confirmed attempt to address a fundamental question: how does a laser become mode locking with an increase of pump power? 相似文献
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Qing Wang Bo Liu Yangyang Xia Yonghui Zheng Ruru Huo Min Zhu Sannian Song Shilong Lv Yan Cheng Zhitang Song Songlin Feng 《固体物理学:研究快报》2015,9(8):470-474
Phase‐change memory (PCM) is regarded as one of the most promising candidates for the next‐generation nonvolatile memory. Its storage medium, phase‐change material, has attracted continuous exploration. Along the traditional GeTe–Sb2Te3 tie line, the binary compound Sb2Te3 is a high‐speed phase‐change material matrix. However, the low crystallization temperature prevents its practical application in PCM. Here, Cr is doped into Sb2Te3, called Cr–Sb2Te3 (CST), to improve the thermal stability. We find that, with increase of the Cr concentration, grains are obviously refined. However, all the CST films exhibit a single hexagonal phase as Sb2Te3 without phase separation. Also, the Cr helps to inhibit oxidation of Sb atoms. For the selected film CST_10.5, the resistance ratio between amorphous and crystalline states is more than two orders of magnitude; the temperature for 10‐year data retention is 120.8 °C, which indicates better thermal stability than GST and pure Sb2Te3. PCM cells based on CST_10.5 present small threshold current/voltage (4 μA/0.67 V). In addition, the cell can be operated by a low SET/RESET voltage pulse (1.1 V/2.4 V) with 50 ns width. Thus, Cr–Sb2Te3 with suitable composition is a promising novel phase‐change material used for PCM with high speed and good thermal stability performances. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) 相似文献
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