Compound buried layer SOI high voltage device with a step buried oxide

A silicon-on-insulator (SOI) high performance lateral double-diffusion metal oxide semiconductor (LDMOS) on a compound buried layer (CBL) with a step buried oxide (SBO CBL SOI) is proposed.The step buried oxide locates holes in the top interface of the upper buried oxide (UBO) layer.Furthermore,holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide (LBO) layer.Consequently,the electric fields in both the thin LBO and the thick UBO are enhanced by these holes,leading to an improved breakdown voltage.The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer.Moreover,SBO CBL SOI can also reduce the self-heating effect.     

Non-Gaussian water diffusion kurtosis imaging of prostate cancer

Purpose

To evaluate the non-Gaussian water diffusion properties of prostate cancer (PCa) and determine the diagnostic performance of diffusion kurtosis (DK) imaging for distinguishing PCa from benign tissues within the peripheral zone (PZ), and assessing tumor lesions with different Gleason scores.

Materials and Methods

Nineteen patients who underwent diffusion weighted (DW) magnetic resonance imaging using multiple b-values and were pathologically confirmed with PCa were enrolled in this study. Apparent diffusion coefficient (ADC) was derived using a monoexponential model, while diffusion coefficient (D) and kurtosis (K) were determined using a DK model. Differences between the ADC, D and K values of benign PZ and PCa, as well as those of tumor lesions with Gleason scores of 6, 7 and ≥ 8 were assessed. Correlations between parameters D and K in PCa were analyzed using Pearson’s correlation coefficient. ADC, D and K values were correlated with Gleason scores of 6, 7 and ≥ 8, respectively.

Results

ADC and D values were significantly (p < 0.001) lower in PCa (0.79 ± 0.14 μm²/ms and 1.56 ± 0.23 μm²/ms, respectively) compared to benign PZ (1.23 ± 0.19 μm²/ms and 2.54 ± 0.24 μm²/ms, respectively). K values were significantly (p < 0.001) greater in PCa (0.96 ± 0.20) compared to benign PZ (0.59 ± 0.08). D and K showed fewer overlapping values between benign PZ and PCa compared to ADC. There was a strong negative correlation between D and K values in PCa (Pearson correlation coefficient r = − 0.729; p < 0.001). ADC and K values differed significantly in tumor lesions with Gleason scores of 6, 7 and ≥ 8 (p < 0.001 and p = 0.001, respectively), although no significant difference was detected for D values (p = 0.325). Significant correlations were found between the ADC value and Gleason score (r = − 0.828; p < 0.001), as well as the K value and Gleason score (r = 0.729; p < 0.001).

Conclusion

DK model may add value in PCa detection and diagnosis. K potentially offers a new metric for assessment of PCa.     

低能质子在半导体材料Si 和GaAs中的非电离能损研究

非电离能损(NIEL)引起的位移损伤是导致空间辐射环境中新型光电器件失效的主要因素.由于低能时库仑相互作用占主导地位,一般采用Mott-Rutherford微分散射截面,但它没考虑核外电子库仑屏蔽的影响.为此,本文采用解析法和基于Monte-Carlo方法的SRIM程序计算了考虑库仑屏蔽效应后低能质子在半导体材料Si,GaAs中的NIEL,SRIM程序在计算过程中采用薄靶近似法, 并与其他作者的计算数据和实验数据进行了比较.结果表明：用SRIM程序计算NIEL时采用薄靶近似法处理是比较合理的,同时考虑库仑 关键词： 低能质子 非电离能损 硅 砷化镓     

Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors

SiN_x is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN_x passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiN_x films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results.     

基于数学形态学的表面原子熔融相的 STM图像识别算法

高温扫描隧道显微镜(HT-STM)可以实时原位地捕捉到表面原子的熔化相变过程.在这一原位变温实验中,快速可靠地识别出每帧STM图像中的熔融相十分关键.传统的手工统计方法存在效率低下、随意性大等问题.我们发展出一套基于数学形态学的算法,来自动快速地识别.与人工方法相比,该算法消除了人为主观误差,使确定的边界更加准确、光滑,处理效率提高了266倍.     

HL-2M 装置运行控制技术初步研究

重点介绍了 HL-2M 装置的运行技术和初步的等离子体控制实验结果,包括等离子体放电方案设计、 线圈电流控制、击穿阶段零场匹配和等离子体电流以及位移的控制。为了降低放电运行风险,HL-2M 装置初始放 电采用了简化的放电方案,通过整定 PID 参数实现了线圈电流控制,在击穿阶段获得了 10V 以上的环电压和较大 范围的零场区域,成功实现等离子体击穿。最后,投入了等离子体电流和水平位移反馈控制算法,成功将等离子 体放电脉宽提升至 200ms 以上,且维持 I_p≥100kA 的时间超过了 100ms,上述结果表明 HL-2M 装置运行控制技术 得到了初步的检验。      

Bi-Sb-Te基热电薄膜温差电池离子束溅射制备与表征

本文采用离子束溅射Bi/Te和Sb/Te二元复合靶,直接制备n型Bi₂Te₃热电薄膜和p型Sb₂Te₃热电薄膜.在退火时间同为1 h的条件下,对所制备的Bi₂Te₃薄膜和Sb₂Te₃薄膜进行不同温度的退火处理,并对其热电性能进行表征.结果表明,在退火温度为150 ℃时,制备的n型Bi₂Te₃关键词： 薄膜温差电池 2Te₃薄膜')" href="#">Sb₂Te₃薄膜 2Te₃薄膜')" href="#">Bi₂Te₃薄膜 离子束溅射     

多波长激光探测微小摄像头机理研究北大核心CSCD

基于激光不同波段的探测传输特点,通过分析典型微小摄像头的回波传输特性,提出了一种针对多波长激光特征检测微小摄像头的研究方案。利用几何光学和波动光学理论,分析微小摄像头结构及其反射光谱特征,计算并仿真了一定探测距离下的回波光场,在此基础上搭建多波长激光检测系统。实验结果表明,在一定的景深范围内,具有红外截止滤光片的微小摄像头对可见光的回波光斑衍射环特征明显、条纹对比度高且可探测距离远;近红外波段的目标回波功率低、后向散射干扰严重,可探测距离近;短波红外波段几乎不受红外截止滤光片影响,且1550 nm处于人眼安全波段。实验结果与数值分析、理论仿真结果一致,验证了短波红外激光用于探测微小摄像头的可行性。     

The D'Alembert type waves and the soliton molecules in a (2+1)-dimensional Kadomtsev-Petviashvili with its hierarchy equation

For a one (2+1)-dimensional combined Kadomtsev-Petviashvili with its hierarchy equation, the missing D'Alembert type solution is derived first through the traveling wave transformation which contains several special kink molecule structures. Further, after introducing the Bäcklund transformation and an auxiliary variable, the N-soliton solution which contains some soliton molecules for this equation, is presented through its Hirota bilinear form. The concrete molecules including line solitons, breathers and a lump as well as several interactions of their hybrid are shown with the aid of special conditions and parameters. All these dynamical features are demonstrated through the different figures.     

Pt/C催化剂中纳米Pt颗粒团聚效应的小角X射线散射

 应用小角X射线散射(SAXS)技术,对乙二醇合成法、浸渍还原法和微波加热法制备的Pt/C催化剂粉体内纳米Pt颗粒的团聚效应进行了研究,得到了不同方法制备的Pt颗粒及其团聚体的特征尺寸、体积分布、表面积变化、团聚程度等信息,并利用透射电镜（TEM）对3种样品进行了测试。实验结果表明:微波加热法制备的催化剂中,Pt颗粒较好地分散于C载体上,且Pt颗粒具有尺度小、分布范围窄、总表面积大和团聚体较少等特征;常规浸渍和乙二醇还原两种方法制备的催化剂中Pt颗粒大小分布相似,但乙二醇还原法制备的催化剂总表面积和团聚体尺度更大,数量也更多。