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81.
UB3LYP/6-31G(d) and ROMP2/6-311++G(d,2p) methods were used to calculate the Si-X bond dissociation energies (BDEs) of a number of para-substituted aromatic silanes (4-Y-C(6)H(4)-SiH(2)X, where X = H, F, Cl, or Li). It was found that the substituent effect on the Si-H BDE of 4-Y-C(6)H(4)-SiH(3) was small, as the slope (rho(+)()) of the BDE- regression was only 0.09 kJ/mol. In comparison, the substituent effect on the Si-F BDE of 4-Y-C(6)H(4)-SiH(2)F was much stronger, whose rho(+ )()value was -2.34 kJ/mol. The substituent effect on the Si-Cl BDE of 4-Y-C(6)H(4)-SiH(2)Cl was also found to be strong with a rho(+)() value of -1.70 kJ/mol. However, the substituent effect on the Si-Li BDE of 4-Y-C(6)H(4)-SiH(2)Li was found to have a large and positive slope (+9.12 kJ/mol) against. The origin of the above remarkably different substituent effects on the Si-X BDEs was found to be associated with the ability of the substituent to stabilize or destabilize the starting material (4-Y-C(6)H(4)-SiH(2)X) as well as the product (4-Y-C(6)H(4)-SiH(2)* radical) of the homolysis. Therefore, the direction and magnitude of the effects of Y-substituents on the Z-X BDEs in compounds such as 4-YC(6)H(4)Z-X should have some important dependence on the polarity of the Z-X bond undergoing homolysis. This conclusion was in agreement with that from earlier studies (for example, J. Am. Chem. Soc. 1991, 113, 9363). However, it indicated that the proposal from a recent work (J. Am. Chem. Soc. 2001, 123, 5518) was unfortunately not justified. 相似文献
82.
The photochemical reaction of Re2(CO)10 with thiophene in hexane solution was investigated under vacuum. Three rhenium clusters: H2Re3(CO)12, HRe3(CO)14 and Re3(CO)14(OH)4, were isolated. The structure of Fellmann-Kaesz cluster Complex HRe3(CO)14 was determined by use of the X-ray diffraction method. The three rhenium atoms form a plane of symmetry and L: Re1Re2Re3 is 107°. The ten carbonyl groups bonded to the two terminal rhenium atoms Re1 and Re3, are staggered with respect to the central rhenium atoms. The bond lengths are 3.10 Å for Re2-Re3 and 3.34 Å for Re1-Re2. The bridging hydride is between Re1 and Re2. 相似文献
83.
A connection which is both Einstein and semisymmetric is called anES connection, and a generalizedn-dimensional Riemannian manifold on which the differential geometric structure is imposed by a unified field tensorg
through anES connection is called ann-dimensionalES manifold and denoted byESX
n
. We investigate some necessary and sufficient conditions for submanifolds ofESX
n
to be also Einstein and derive the generalized fundamental equations on various submanifolds ofESX
n
, such as generalized Gauss formulas, generalized Weingarten equations, and generalized Gauss-Codazzi equations. We employ the useful and powerful concept ofC-nonholonomic frame of reference, introduced in earlier work. 相似文献
84.
Cheng HY 《Physical review D: Particles and fields》1991,43(5):1579-1592
85.
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89.
Jian Ping LI* Ping LIU Yu Lu WANG College of Chemistry & Environmental Science Henan Normal University Xinxiang Key Laboratory of Environmental Science Technology of High Education of Henan Province Xinxiang 《中国化学快报》2003,14(7)
Azo compounds are widely utilized as analytic reagents and dyes1, they can also be used in material of non-linear optics, material of optics information storing in laser disks, and dyes with oil solubility in photochromy in modern technology2. Recently, many noteworthy studies have shown that some azo compounds possess excellent optical memory and photoelectric properties3,4. For example, polymer scaffolds bearing azobenzene-potential are useful for optical information storage, azo-dye doped… 相似文献
90.
The electrical behavior of the cationic, polyacetylene-based, conjugated ionomer, poly[(2-cyclooctatetraenylethyl)trimethylammonium trifluoromethanesulfonate], sandwiched between gold electrodes is reported. The steady-state current of this mixed ionically/electronically conducting system is assigned to be unipolar diffusive hole transport for voltages below approximately 1.4 V, giving way to bipolar migratory transport above approximately 1.4 V. In the low-voltage regime, a non-Faradaically controlled doping model is proposed where p-doping at the anode is balanced by the charging of an ionic double layer at the cathode. In the high-voltage regime, n- and p-type regions extend from the electrodes as the voltage becomes sufficient to drive disproportionation and the electric field required by the redistribution of ions begins to substantially influence carrier transport. The assignment of a transport mechanism is primarily based on analyzing the decay of the steady-state system under short-circuit and open-circuit conditions. First, it is shown that the power describing the power-law decay of the short-circuit current is characteristic of the steady-state carrier profile. Second, it is argued that a component of the time-dependent, open-circuit voltage decaying more rapidly than the time scale for ion motion is indicative of a substantial migratory component to steady-state transport, as observed in the high-voltage regime. The hole and electron mobilities are estimated to be on the order of 10(-7)-10(-6) cm(2) V(-1) s(-1). 相似文献