双纠缠原子在耗散腔场中的纠缠动力学

研究了能量损耗腔中,两纠缠二能级原子与单模辐射场相互作用过程中原子的纠缠动力学.结果表明:双纠缠原子的纠缠度演化特性决定于初始两原子间的纠缠度、纠缠形式、腔场的平均光数、腔场的衰变系数.当原子初始处于一特定纠缠态时,其纠缠度可以放大,并且不受腔场损耗的影响. 关键词： 二能级原子 纠缠度 密度算符 单模辐射场     

四端双量子点系统中的自旋和电荷能斯特效应

基于非平衡态格林函数方法,理论研究了与四个电极耦合的双量子点系统中的自旋和电荷能斯特效应,考虑了不同电极的磁动量结构和量子点内以及量子点间电子的库仑相互作用对热电效应的影响.结果表明铁磁端口中的磁化方向能够有效地调节能斯特效应:当电极1和电极3中的磁化方向反平行排列时,通过施加横向的温度梯度,系统中将会出现纯的自旋能斯特效应;当电极4从普通金属端口转变为铁磁金属端口时,将同时观测到电荷和自旋能斯特效应.研究发现,能斯特效应对于铁磁电极极化强度的依赖程度较弱,但对库仑排斥作用十分敏感.在量子点内和点间库仑排斥作用的影响下,自旋及电荷能斯特系数有望提高两个数量级.     

钛酸铋钠系铁电体的相变研究

研究了(Na0.5Bi0.5)TiO3,(Na0.5Bi0.5)(1-x)BaxTiO3和(Na0.5Bi0.5)(1-x)SrxTiO3陶瓷的介电温谱,确认了该系列材料在520℃以下的高、低温两种介电反常和存在于这一温度区间的巨大热滞现象.发现该类材料只存在对应于低温介电反常的介电损耗峰,而对于高温介电峰则无对应的损耗峰.同时,常温时材料的结构特征对于其介电温谱的特征影响较小,但施加偏置场却可明显改变材料的介电温谱特征:1)可使得材料的热滞现象几乎消失;2)适当偏置场下材料升降温介电曲线可与零偏场下介电 关键词： 钛酸铋钠 热滞 相变 极性微区     

铁性体中畴结构产生的热力学描述

在批判平衡态热力学局限性的基础上,采用不可逆过程热力学对铁性体中畴结构的产生做了动态描述.注意到了铁电与铁磁两种情况下的相似与区别.在铁弹情况下,出于客观的必要性,类比地引入了铁弹相变“分子场”的概念.明确了体系的有限性、过程的不可逆性与畴结构的产生的内在关联. 关键词： 铁性体 畴结构 不可逆性 对称性     

Strong-Superstrong Transition in Glass Transition of Metallic Glass

Dynamic fragility of bulk metallic glass （BMG） of Zr64Cu16Ni10Al10 alloy is studied by three-point beam bending methods. The fragility parameter mfor Zr64Cu16Ni10Al10 BMG is calculated to be 24.5 at high temperature, which means that the liquid is a ＂strong＂ liquid, while to be 13.4 at low temperature which means that the liquid is a ＂super-strong＂ liquid. The dynamical behavior of Zr64Cu16Ni10Al10 BMG in the supercooled region undergoes a strong to super-strong transition. To our knowledge, it is the first time that a strong-to-superstrong transition is found in the metallic glass. Using small angle x-ray scattering experiments, we find that this transition is assumed to be related to a phase separation process in supercooled liquid.     

用于测量熔合反应的静电偏转板介绍

An electrostatic deflector for separating the fusion evaporation residues from the beam-like products in heavy ion reactions was installed. The evaporation residue separation and identification with the electrostatic deflector setup was tested with the reaction ^32S＋^96Zr at several energies. The fusion evaporation residues and the beam-like particles were well separated after the electrical separation and the experimental fusion cross section obtained from the angular distribution is in good agreement with the calculated value well above the Coulomb barrier. This confirms the reliability of the setup.     

掺铒的纳米相氟氧化物玻璃陶瓷的多光子红外量子剪裁

研究了掺铒的纳米相氟氧化物玻璃陶瓷(Er(3):FOV)的红外量子剪裁现象,测量了红外和可见的Er(3):FOV的荧光光谱.结果发现光激发²H_11/2能级的⁴ I_13/2→⁴I_15/2荧光跃迁的近似量子剪裁效率已达约186.28%.计算了有关的无辐射弛豫速率、自发辐射速率和能量传递速率,分析了有关的能量传递动力学过程,发现     

Experimental Evidence of Two-Proton Emissions from 18Ne Excited State

Experiment ^18Ne＋^197 Au was performed in Heavy Ion Research Facility Radioactive Ion Beam Line at Lanzhou （RIBLL）. The nuclear energy levels of ^18Ne were built by complete kinematical reconstruction of the decay products and diproton decay were observed from ^18Ne excited states. At 6.15 MeV, the experimental relative momentum and angular correlations of the emitted protons are given. The obvious enhancement at ｜qrol｜= 23 MeV/c and θc.m. = 40° shows the experimental criterion of ^2He cluster decay from ^18Ne^q.     

Effects of barium on the nonlinear electrical characteristics and dielectric properties of SnO2-based varistors

The effects of barium on electrical and dielectric properties of the SnO_2·Co_2O_3·Ta_2O_5 varistor system sintered at 1250℃ for 60min were investigated. It is found that barium significantly improves the nonlinear properties. The breakdown electrical field increases from 378.0 to 2834.5V/mm, relative dielectric constant (at 1kHz) falls from 1206 to 161 and the resistivity (at 1kHz) rises from 60.3 to 1146.5kΩ·cm with an increase of BaCO_3 concentration from 0mol% to 1.00mol%. The sample with 1.00mol% barium has the best nonlinear electrical property and the highest nonlinear coefficient (α=29.2). A modified defect barrier model is introduced to illustrate the grain-boundary barrier formation of barium-doped SnO_{2}-based varistors.     

Lifetime of resonant state in a spherical quantum dot

This paper calculates the lifetime of resonant state and transmission probability of a single electron tunnelling in a spherical quantum dot (SQD) structure by using the transfer matrix technique. In the SQD, the electron is confined both transversally and longitudinally, the motion in the transverse and longitudinal directions is separated by using the adiabatic approximation theory. Meanwhile, the energy levels of the former are considered as the effective confining potential. The numerical calculations are carried out for the SQD consisting of GaAs/InAs material. The obtained results show that the bigger radius of the quantum dot not only leads significantly to the shifts of resonant peaks toward the low-energy region, but also causes the lengthening of the lifetime of resonant state. The lifetime of resonant state can be calculated from the uncertainty principle between the energy half width and lifetime.